• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.11-11
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• 1996

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.231-238
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• 1998

Cr3C2 -dispersed TiC composites were prepared via HPCS(high pressure-self combustion sintering) pro-cess using mixtures of Ti, Cr and a carbon source for the purpose of increasing the facture toughness and sinterability of TiC. In this study the microstructure and properties of the composites were investigated in terms of relation to the carbon source the particle size of Ti and the amount of Cr. It was found that car-bon black was the most effective carbon source among the various carbon sources tested and the reaction was more effective as the particle size of Ti decreased. Among the sintered composites of Ti-C-Cr system the one with 30wt% Cr showed the best physical properties with 0.5% in apparent porosity 98.8% in re-lative density 18.2 GPa in hardness and 4.46 MPa.m1/2 in fracture toughness. In addition it was observed that the lattice constant of TiC decreased gradually with increasing the amount of Cr.

• Journal of Powder Materials
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• v.9 no.5
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• pp.352-358
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• 2002

The effects of boron or manganese added as $B_4C$, Mn, $TiB_2$, B on TiC-30vo1.%$Ni_3Al$ cermet sintered at 1380 and $1400^{\circ}C$ for 1 hour, were examined in relation with shrinkage, relative density, microstructure, lattice parameter, hardness and fracture toughness ($K_{IC}$). The results are summarized as follows: 1) The highest shrink-age showed about 30.5% in the specimen added B$_4$C and the maximum relative density was about 99% in the specimen added $TiB_2$; 2) The grains of TiC were grown during sintering and made the surrounding structure by adding boron and manganese. The largest grain size showed about $2.8\mutextrm{m}$ in the specimen with boron sintered at $1400^{\circ}C$;3) The lattice parameter of TiC was about $4.325\AA$ and $Ni_3Al$ about $3.592\AA$ by adding other elements; 4) The highest hardness was about $1100kgf/\textrm{mm}^2$ in the specimen with B4C; 5) The fracture toughness ($K_{IC}$) showed about $15MNm^{-3/2}$ in the specimen added $TiB_2$.

• Journal of Powder Materials
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• v.23 no.6
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• pp.458-465
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• 2016

A $TiO_2$/CNT nanohybrid photocatalyst is synthesized via sol-gel route, with titanium (IV) isopropoxide and multi-walled carbon nanotubes (MWCNTs) as the starting materials. The microstructures and phase constitution of the nanohybrid $TiO_2$/CNT (0.005wt%) samples after calcination at $450^{\circ}C$, $550^{\circ}C$ and $650^{\circ}C$ in air are compared with those of pure $TiO_2$ using field-emission scanning electron microscopy and X-ray diffraction, respectively. In addition, the photocatalytic activity of the nanohybrid is compared with that of pure $TiO_2$ with regard to the degradation of methyl orange under visible light irradiation. The $TiO_2$/CNT composite exhibits a fast grain growth and phase transformation during calcination. The nanocomposite shows enhanced photocatalytic activity under visible light irradiation in comparison to pure $TiO_2$ owing to not only better adsorption capability of CNT but also effective electron transfer between $TiO_2$ and CNTs. However, the high calcination temperature of $650^{\circ}C$, regardless of addition of CNT, causes a decrease in photocatalytic activity because of grain growth and phase transformation to rutile. These results such as fast phase transformation to rutile and effective electron transfer are related to carbon doping into $TiO_2$.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• Journal of the Korean Chemical Society
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• v.18 no.6
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• pp.408-414
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• 1974

The direct reactions of titanium tetrachloride with piperidine and diphenylamine in dichloromethane have been studied by examining the isolated reaction products. In the reaction with piperidine, titanium tetrachloride undergoes both addition and substitution reactions as in the following: $TiCl_4+C_5H_{10}NH{\to}TiCl_4{\cdot}C_5H_{10}NH$$TiCl_4+C_5H_{10}{\to}TiCl_3{\cdot}NC_5H_{10}+HCl$ The addition reaction is relatively fast and completed in minutes whereas the substitution reaction is very slow. The both reaction products coprecipitated with piperidine hydrochloride formed during the substitution reaction were isolated and characterized. The reaction with diphenylamine resembles to the above reaction but the addition compound could be obtained in pure crystal form.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.756-760
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• 2007

The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.471-476
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• 1994

The influence of TiO2 addition on the sintering and microstructure of magnesia ceramics was studied. An excess amount of TiO2 over the solid solubility limit reacted with magnesia to form Mg2TiO4 compound above 130$0^{\circ}C$. The deviation of lattice parameter of MgO was estimated to be under 0.2% when existence of TiO2 in MgO. The addition of TiO2 markedly promoted the densification of MgO at comparatively low temperature and the sintered density of about 98% of the theorectical was obtained at 150$0^{\circ}C$, 2h. The densification was mainly governed by grain growth of MgO and the effect of Mg2TiO4 existing as a second phase on depression of grain growth of MgO was not exhibited.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.44-48
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• 1996

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified BaTiO$_3$systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between 13$25^{\circ}C$ and 1375$^{\circ}C$. The room temperature resistivity, PTCR effect and ac complex impedence characteristics were studied. It shows that the room temperature resistivity was increased with the increasing Ti/Ba mole ratio and sintering temperature. It was suggested that this result was mainly attributed to its grain-boundary properties

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1257-1261
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• 1994

Phsysical and dielectric properties of $(1-x)CaTiO_3-xLa(Zn_{1/2}Ti_{1/2})O_3$ ceramics were investigated at the temperature range of $25^{\circ}C$ to $80^{\circ}C$ at the frequency of 6 GHz. As increasing addition of the amount of $La(Zn_{1/2}Ti_{1/2})O_3$ to x = 5 mol,Q value was increased due to grain growth and increase of density. For more addition, Q value decreased due to electrical defect. Temperature coefficient of resonant frequency could be controlled by the amount of $La(Zn_{1/2}Ti_{1/2})O_3$, which could be explained by volume mixing rule.