• 한국물환경학회지
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• 제21권1호
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• pp.46-51
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• 2005

The photocatalytic oxidation of Rhodamine B (RhB) was studied using immobilized $TiO_2$ and rotating disk photocatalytic reactor. Immobilized $TiO_2$ onto the surface of the aluminum plate was employed as the photocatalyst and two 20 W germicidal lamps and two 20 W UV-BLB lamps were used as the light source and the reactor volume was 1.0 L. The effects of parameters such as the number of rotating disk, rpm of rotating disk, the number of coating, $H_2O_2$ and photo-fenton amounts, and the concentrations of anions and cations ($NO_3{^-}$, $SO_4{^{2-}}$, $Cl^-$, $Ca^{2+}$, $Zn^{2+}$, $Na^+$) were examined.

• 한국세라믹학회지
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• 제28권4호
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.394-399
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• 2000

The mechanical and electrical properties of pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), TiB2, and (Al5Y3O12). Reaction between Al2O3 and $Y_2O_3$ formed YAG but the relative density decreased with increasing $Al_2O_3+Y_2O_3$ contents. The Flexural strength showed the value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives at room temperatures. Owing to crack deflection and crack bridging, the fracture toughness showed 6.2, 6.0 and 6.6 MPa.m1/2 for composites added with 4, 8 and 12 wt% Al2O3+Y2O3 additives respectively at room temperature. The resistance temperature coefficient showed the value of $3.6\times10^{-3},\; 2.9\times10^{-3}\; and\; 3.0\times10^{-3} /^{\circ}C$$^{\circ}C$ for composite added with 4, 8 and 12 wt% $Al_2O_3+Y_2O_3$additives respectively at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
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• pp.45.2-45.2
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• 2008

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.43.1-43
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• 2000

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.30.2-30.2
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• 2006

• Environmental Engineering Research
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• 제20권4호
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• pp.329-335
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• 2015

The effects of ion-doping on $TiO_2$ nanotubes were investigated to obtain the optimal catalyst for the effective decomposition of Rhodamine B (RB) through UV photocatalytic oxidation process. Changing the calcination temperature, which changed the weight fractions of the anatase phase, the average crystallite sizes, the BET surface area, and the energy band gap of the catalyst, affected the photocatalytic activity of the catalyst. The ionic radius, valence state, and configuration of the dopant also affected the photocatalytic activity. The photocatalytic activities of the catalysts on RB removal increased when $Ag^+$, $Al^{3+}$ and $Zn^{2+}$ were doped into the $TiO_2$ nanotubes, whereas such activities decreased as a result of $Mn^{2+}$ or $Ni^{2+}$ doping. In the presence of $Zn^{2+}$-doped $TiO_2$ nanotubes calcined at $550^{\circ}C$, the removal efficiency of RB within 50 min was 98.7%.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국분말재료학회지
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• 제6권2호
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• pp.171-177
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• 1999

Ti-45.2at.%Ni-5at.%Cu and Ti-40.2at.%Ni-10atat.%Cu alloy powders were fabricated by gas atomization process. The microstructures, Shape, hardness and phase transformation behaviors of the powders were investigated by means of optical microscopy, scanning electron microscopy, micro-hardness measurement, x-ray diffraction analyses and differential scanning calorimetry. The hardness of the Ti-Ni-XCu alloy powders decreased as Cu-content increased. The x-ray diffraction analyses were carried out for powders without heat treatment, and those that treated at 85$0^{\circ}C$ for an hour in a vaccum state($10^5$ torr) and then quenched into ice water. The intensity of B$19^t$ phase increased with heat treating. The monoclinic B$19^t$ martensite was formed in the Ti-Ni-XCu alloy powders during cooling.

• 한국자기학회지
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• 제20권3호
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• pp.83-88
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• 2010

Pd과 3d(V, Ti) 및 4d(Mo, Ru, Rh) 전이금속이 c($2{\times}2$) 합금을 이루고 있는 단층의 자성을 제일원리적 FLAPW 에너지띠 방법을 이용하여 연구하였다. 이들 합금과 비교를 위하여 Pd과 V, Ti 및 Mo, Ru, Rh 원자로만 이루어진 단층의 전자구조도 계산하였다. 3d 원소인 V와 Ti 만으로 이루어진 단층의 경우, V은 반강자성, Ti의 경우는 강자성상태가 안정적이었으나, 이들이 Pd와 c($2{\times}2$) 합금을 이루었을 경우 모두 자기모멘트가 반대 방향을 가지는 준강자성 상태가 안정적이었다. 반면에 4d 원자인 Mo, Ru, Rh이 Pd와 c($2{\times}2$) 합금을 이룰 경우에는 자기모멘트들이 같은 방향을 가졌다. 자기모멘트 값을 보면, Ru이나 Rh의 경우 순수단층이나 Pd과 합금을 이룬 경우 그리 큰 차이를 보이지 않았으나, Mo의 경우 $0.02\;{\mu}_B$에서 $2.98\;{\mu}_B$로 급격히 증가하였다. 합금을 이루는 두 원소사이의 전하이동은 전기음성도에 따르게 됨을 알았다.