• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.53-64
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• 2020

The Samgwang deposit has been one of the largest deposits in Korea. The deposit consists of series of host rocks including Precambrian metasedimentary rocks and Jurassic Baegunsa formation, which unconformably overlies the Precambrian metasedimentary rocks. The deposit consists of eight lens-shaped quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock, which feature suggest that it is an orogenic-type deposit. Laminated quartz veins are common in the deposit which contain minerals including quartz, ankerite, white mica, chlorite, apatite, rutile, arsenopyrite, sphalerite, chalcopyrite and galena. The structural formulars of white micas from laminated quartz vein and wallrock alteration are determined to be (K_1.02-0.82Na_0.02-0.00Ca_0.00)(Al_1.73-1.58Mg_0.26-0.16Fe_0.23-0.10Mn_0.00Ti_0.03-0.01Cr_0.01-0.00)(Si_3.35-3.22Al_0.79-0.65)O₁₀(OH)₂ and (K_0.75-0.67Na_0.01Ca_0.00) (Al_1.78-1.74Mg_0.16-0.15Fe_0.15-0.13Mn_0.00Ti_0.04-0.02Cr_0.01-0.00)(Si_3.33-3.26Al_0.74-0.67)O₁₀(OH)₂, respectively. It suggest that white mica from laminated quartz vein has higher interlayer cation (K+Na+Ca) and Fe+Mg+Mn+Ti content in octahedral site compared to the white mica from the wallrock alteration. Compositional variations in white mica from laminated quartz vein can be caused by phengitic or Tschermark substitution ((Al³⁺)^VI+(Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI)+(Si⁴⁺)^IV) and (Fe³⁺)^VI <-> (Al³⁺)^VI substitution. Ankerite from laminated quartz vein has compositional variations of FeO and MgO contents along crystal growth direction. The geochemical and textural features suggest that laminated quartz vein from the Samgwang gold-silver deposit was formed during ductile shear stage, which is an important main gold-silver ore-forming event in orogeinc deposit.

• Environmental Engineering Research
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• v.16 no.2
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• pp.81-90
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• 2011

Different weight percentages of Ag, Pt, and Au doped nano $TiO_2$ were synthesized using the acetic acid hydrolyzed sol-gel method. The crystallite phase, surface morphology combined with elemental composition and light absorption properties of the doped nano $TiO_2$ were comprehensively examined using X-ray diffraction (XRD), $N_2$ sorption analysis, transmission electron microscopic (TEM), energy dispersive X-ray, and DRS UV-vis analysis. The doping of noble metals stabilized the anatase phase, without conversion to rutile phase. The formation of gold nano particles in Au doped nano $TiO_2$ was confirmed from the XRD patterns for gold. The specific surface area was found to be in the range 50 to 85 $m^2$/g. TEM images confirmed the formation a hexagonal plate like morphology of nano $TiO_2$. The photocatalytic activity of doped nano $TiO_2$ was evaluated using 4-chlorophenol as the model pollutant. Au doped (0.5 wt %) nano $TiO_2$ was found to exhibit higher photocatalytic activity than the other noble metal doped nano $TiO_2$, pure nano $TiO_2$ and commercial $TiO_2$ (Degussa P-25). This enhanced photocatalytic activity was due to the cathodic influence of gold in suppressing the electron-hole recombination during the reaction.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.172-177
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• 2003

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of $BaTi_4O_9$-based ceramics were studied to develop the materials for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of$875{\circ}C$. The microwave dielectric properties were k=32, Q＊f=9000 GHz, ${ au}_f$=10 ppm/${\circ}C$. As the amount of glass increased, phase decompositions from $BaTi_4O_9;to;BaTi_5O_{11};and;Ba_4Ti_{13}O_{30}$ was observed.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.4
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• pp.469-484
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• 2022

The Janggun Pb-Zn deposit has been known one of the four largest deposits (Yeonhwa, Shinyemi, Uljin) in South Korea. The geology of this deposit consists of Precambrian Weonnam formation, Yulri group, Paleozoic Jangsan formation, Dueumri formation, Janggum limestone formation, Dongsugok formation, Jaesan formation and Mesozoic Dongwhachi formation and Chungyang granite. This Pb-Zn deposit is hydrothermal replacement deposit in Paleozoic Janggum limestone formation. The wallrock alteration that is remarkably recognized with Pb-Zn mineralization at this deposit consists of mainly rhodochrositization and dolomitization with minor of pyritization, sericitization and chloritization. Wallrock alteration is divided into the five zones (Pb-Zn orebody -> rhodochrosite zone -> dolomite zone -> dolomitic limestone zone -> limestone or dolomitic marble) from orebody to wallrock. The white mica from wallrock alteration occurs as fine or medium aggregate associated with Ca-dolomite, Ferroan ankerite, sideroplesite, rutile, apatite, arsenopyrite, pyrite, sphalerite, galena, quartz, chlorite and calcite. The structural formular of white mica from wallrock alteration is (K_0.77-0.62Na_0.03-0.00Ca_0.03-0.00Ba_0.00Sr_0.01)_0.82-0.64(Al_1.72-1.48Mg_0.48-0.20Fe_0.04-0.01Mn_0.03-0.00Ti_0.01-0.00Cr_{0.00As0.01-0.00}Co_0.03-0.00Zn_0.03-0.00Pb_0.05-0.00Ni_0.01-0.00)_2.07-1.92 (Si_3.43-3.33Al_0.67-0.57)_4.00O₁₀(OH_1.94-1.80F_0.20-0.06)_2.00. It indicated that white mica from wallrock alteration has less K, Na and Ca, and more Si than theoretical dioctahedral micas. The white micas from wallrock alteration of Janggun Pb-Zn deposit, Yeonhwa 1 Pb-Zn deposit and Baekjeon Au-Ag deposit, and limestone of Gumoonso area correspond to muscovite and phengite and white mica from wallrock alteration of Dunjeon Au-Ag deposit corresponds to muscovite. Compositional variations in white mica from wallrock alteration of these deposits and limeston of Gumoonso area are caused by mainly phengitic or Tschermark substitution mechanism (Janggun Pb-Zn deposit), mainly phengitic or Tschermark substitution and partly illitic substitution mechanism (Yeonhwa 1 Pb-Zn deposit, Dunjeon Au-Ag deposit and Baekjeon Au-Ag deposit), and mainly phengitic or Tschermark substitution and partly illitic substitution or Na⁺ <-> K⁺ substitution mechanism (Gumoonso area).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.819-826
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• 2002

In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.72-78
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• 1998

An optical modulator Ti:LiNbO$_3$optical waveguide and CPW electrode structure were fabricated. The optical modulator was packaged using components such as ferrules, dirmy LN block and glass, vibration and shock absorbption pad, and alumina feeder through processings of pigtailing. Au wire bonding, epoxing, SMA connecting, sealing. The electrical and optical characteristics were measured after packaging. The electrical properties of S$_{21}$ and S$_{11}$ were obtained as 9.8 GHz at -3 dB and -8.9dB at 14.4GHz, respectively. Optical waveguide prepared met requirements for a single mode at a 1550nm wavelength range. Insertion loss was 4.3dB at room temperature after packaging, and was varied 4.3~6.4dB at various temperatures, 5~45$^{\circ}C$. E-O bandwidth measurement showed 3dB optical response at 7.8GHz, which means that it is applicable for 10Gbps optical communicationon

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.179-186
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• 2019

In this study, we investigated the structural properties of $Ga_2O_3$ thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. $Ga_2O_3$ thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of $Ga_2O_3$ changed from ${\varepsilon}$-phase to ${\beta}$-phase depending on the growth temperature. The crystal structure of ${\varepsilon}-Ga_2O_3$ was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ${\varepsilon}-Ga_2O_3$ showed much better photocurrent characteristics in the 266 nm UV range than in the visible range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.375-384
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• 2004

Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.