• Computers and Concrete
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• 제19권2호
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• pp.153-159
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• 2017

In this study, the strength properties of alkali-activated silica fume (SF) mortars were investigated. The crushed limestone sand with maximum size of 0-5 mm and the sodium meta silicate ($Na_2SiO_3$) used to activate the binders were kept constant in the mortar mixtures. The mortar specimens using the replacement ratios of 0, 25, 50, 75 and 100% SF by weight of cement together with $Na_2SiO_3$ at a constant rate were produced in addition to the control mortar produced by only cement. Moreover, the mortar specimens using the replacement ratio of 4% titanium dioxide ($TiO_2$) by weight of cement in the same mixture proportions were produced. The prismatic specimens produced from eleven different mixtures were de-moulded after a day, and the wet or dry cure was applied on the produced specimens at laboratory condition until the specimens were used for flexural strength ($f_{fs}$) and compressive strength ($f_c$) measurement at the ages of 7, 28 and 56 days. The $f_{fs}$ and $f_c$ values of mortars applied the wet or dry cure were compared with the results of control mortar. The findings revealed that the $f_c$ results of the alkali activated 50% SF mortars were higher than that of mortar produced with Portland cement only. It was found that the $f_{fs}$ and $f_c$ of alkali-activated SF mortars cured in dry condition was averagely 4% lower than that of alkali-activated SF mortars cured in wet condition.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• 암석학회지
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• 제12권3호
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• pp.135-153
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• 2003

선캠브리아기 변성퇴적암류를 관입하고 있는 탄산염암에 배태하는 홍천 철-희토류 광상은 자철석, 안케라이트, 능철석, 마그네사이트, 스트론티아나이트 등의 다양한 탄산염광물과 모나자이트, 아지린휘석, Na가 섬석 및 황화광물들이 산출되어 이들 암석의 지화학적특성과 성인을 규명하고자 주 원소, 미량원소, 희토류원소 및 산소-탄소의 안정동위원소의 광물 및 암석화학연구가 이루어졌다. 각 원소(주원소, 미량원소, 희토류원소)들을 본 연구지역의 탄산염암과 유사한 철질 카보나타이트(ferro-carbonatite)와 비교하면 주 원소에서는 농집된 FeO와 결핍된 CaO가 관찰되며, $SiO_2$가 증가하면서 $TiO_2$와 $A1_2O_3$증가, CaO, FeO, MgO 및 $P_2O_{5}$의 약한 감소가 인지되나 분산되어 뚜렷한 경향은 아니다. 미량원소는 Nb, Zr 및 Zn이 철질 카보나타이트보다 결핍되어 나타나며, $SiO_2$의 증가에 따른 V 및 Ni의 증가, U 및 Rb의 미약한 증가가 확인되나 타 원소들은 분산되어 뚜렷한 경향을 나타내지 않는다. 희토류원소는 전희토류(TREE)함량이 매우 높고 La, Ce, Pr, Nd 및 Sm 같은 경희토류의 농집, 그리고 결핍된 중희토류로 인하여 높은 La/Lu 값을 보이고 있다. 안케라이트, 스트론티아나이트 및 전암의 산소 및 탄소 안정동위원소 결과는 본 암이 화성기원의 카보나타이트용융체에서 유래된 것으로 나타난다. 홍천 철-희토류 광상 탄산염암의 암석화학적 특성은 일반적인 철질 카보나타이트와는 차이가 있으며 러시아 Kovdor 및 핀랜드 Sokli 지역에서 산출되는 카보나타이트의 일종인 포스코라이트(phoscorite)의 암석화학성분과 매우 유사하다.

• 대한기계학회논문집A
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• 제26권6호
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• 한국환경보건학회지
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• 제14권1호
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• pp.1-9
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• 1988

석탄유도가스에 포함된 황화수소를 제거시킬 흡착제를 개발하기 위하여 알칼리 토금속, 천이원소 및 아연의 이온반경보다 이온반경이 작은 금속산화물을 산화아연에 첨가시켜 다공성 흡착제를 제조하였다. 600$\circ$C에서 이들 첨가시료를 2.09vol.% 황화수소와 질소가스 혼합기체로 반응시켜 초기속도를 측정하고, 같은 온도에서 사용된 흡착제를 공기로 재생시켰다. 사용된 금속산화물 첨가 흡착제중에서 CaO, TiO$_2$, $Fe_2O_3$, CuO, $Ga_2O_3$ 및 Si$_2$O가 ZnO 흡착제의 초기속도를 증가시켜 첨가제로 사용할 수 있음을 보였다.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.216-221
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• 2010

Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

• 한국자동차공학회논문집
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• 제10권6호
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• pp.171-177
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• 2002

Metal matrix composites had generated a lot of interest in recent times because of significant in specific properties, it was also highlighted as the material of frontier industry because strength, heat-resistant, corrosion-resistant and wear-resistant were superiored. In recent years, the study of metal matrix composite has increased by aluminum alloy. The study is based on the tribological properties of AC4CH that is a part of the mechanical property of metal matrix composites. Metal matrix composite that is produced from matrix material AC4CH and reinforcement SiO$_2$, Al$_2$O$_3$ and TiO$_2$ are added to the metal matrix composite fur strength so binding among the whisker can take place. Each metal matrix composite is produced using the squeeze casting method. To test for tribe a pin-on-disk machine and lubricant is used without paraffine 8.2CST at room temperature which is 40$\^{C}$. As the results of this study, the tribological properties of each specimen are more improved than AC4CH. The variation of coefficient resistance is more stable at the AC4CH and TiO$_2$, but the variation rates are higher at the inanimate binder.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1252-1253
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method with different $Ar/O_2$ ratio. The $V_{1.8}W_{0.2}O_5$ thin films were measured electrical and structural properties, fairly good Temperature coefficient of resistance(TCR). It was found that electrical and structural properties, TCR properties of thin films were strongly dependent upon the $Ar/O_2$ ratio. The dielectric constant of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were 93 with a dielectric loss of 0.535, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were -3.15%/$^{\circ}C$.

• 대한전자공학회논문지
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• 제18권3호
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• pp.42-51
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• 1981

결정방위 (100)인 단결정 P형 실리콘 기판으로 N+PP+ 태양전지를 제작하였다. 뒷면의 P+층의 형성은 940℃에서 60분간 boron nitride를 사용하는 첫번째 boron predeposition과 boron glass를 제거하지 않고 1145℃에서 3시간 동안 행하는 두번째 predeposition으로 이루어지며 boron 확산층의 어닐링은 1100℃에서 40분간 하였다. 앞면의 N+ 층의 형성은 900℃에서 7∼15분동안 POCI3 source를 사용하는 Phosphorus Predeposition으로 이루어지며 어닐링은 800℃에서 1시간 동안 dryO2분위기로 하였다 금속전극층의 형성은 Ti, Pd, Ag의 순으로 앞, 뒷면에 이들 금속들을 질공증착한 후 사진식각을 함으로써 이루어지며 이에 다시 전기도금을 하여 전체 전극층의 두께를 3∼4μm정도로 증가시켰다. 표면 광반사를 줄이기 위해 앞면에 400℃에서 silicon nitride를 입혔으며 마지막으로 550℃에서 10분간 alloy를 함으로써 금속전극의 신뢰도를 높혔다. 그 결과 제작된 면적 3.36㎠의 N+PP+ 전지들은 100mW/㎠의 인공조명하에서 단락전류 103mA, 개방전압 0.59V ,충실도 0.8을 보였다. 따라서 실제 전면적(수광면적)효율이 14.4%(16.2%)가 되어 BSF가 없는 N+P 전지의 11%전면적 변환효율에서 약3.5%의 효율이 개선되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.28-28
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• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.