• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.144-149
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• 2006

In this research we tried to make nano-sized TiNx by using planetary milling, and we made the composites double layered of titanium and nano-sized TiNx by using spark plasma sintering apparatus after mixing with the different ratio of pure titanium powder, and they were heat treated at $850^{\circ}C$ for 30 minutes. The crystal structures of nano-sized TiNx powders and the composites were analyzed by X-ray diffraction (XRD). The microstructures of the powders were analyzed by using scanning electron microscopy (FESEM) and the 40-50 nm size of nano-sized TiNx particle on the surface of agglomerated particles was investigated. With increasing the ratio of nano-sized TiNx of the composites, the microvickers hardness of the composites was increased.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.505-509
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• 1997

FRAM(Ferroelectric Random Access memory)에의 응용을 위해 rf magnetron sputtering법을 이용하여 SrB $i_{2}$T $a_{2}$ $O_{9}$(SBT)박막을 증착하였다. 사용된 기판은 Pt/Ti/Si $o_{2}$Si이었으며 50$0^{\circ}C$에서 증착한 후 80$0^{\circ}C$의 산소 분위기 하에서 1시간 동안 열처리하였다. 증착시 증착 압력을 변화시켜 가면서 이에 따른 특성의 변화를 고찰하였다. 박막내의 Bi와 Sr의 부족을 보상하기 위해 20mole%의 Bi $O_{2}$와 30mole%의 SrC $O_{3}$를 과잉으로 넣어 타겟을 제조후 사용하였고 박막들의 두께는 300nm의 두께를 가지며 증착압력에 따라 다른 미세 구조르 보였다. 10mtorr에서 증착한 박막의 조성은 S $r_{0.6}$B $i_{3.8}$Ta/ sub 2.0/ $O_{9.0}$이었다. 이 SBT 박막의 잔류 분극(2 $P_{r}$)과 보전계(2 $E_{c}$)값은 각각 인가 전압 5V에서 18.5 $\mu%C/$\textrm{cm}^2$과 150kV/cm이었고, signal/noise비는 3V에서 4.6을 나타내었다. 5V의 bipolar pulse하에서 $10^{10}$cycle까지 피로 현상이 나타나지 않았으며, 누설 전류 밀도는 133kV/cm에서 약 1x$10^{-7A}$$\textrm{cm}^2$의 값을 보였다.을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.1
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• pp.21-28
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• 2011

Fe, Ni and Co, typical active components, were dispersed on $Al_2O_3$ and $TiO_2$ for $SO_3$ decomposition. $SO_3$ decomposition was conducted at the temperature ranges from $750^{\circ}C$ to $950^{\circ}C$ using the prepared catalysts. Alumina based catalysts showed the surface areas higher than Titania based catalysts, which resulted from spinel structure formation of alumina based catalysts. Catalytic $SO_3$ decomposition reaction rates were in the order of Fe>Co${\gg}$Ni. The metal sulfate decomposition temperature were in the order of Ni>Co>Fe from TGA/DTA analysis of metal sulfate. During $SO_3$ decomposition, metal sulfate can form on the catalysts. $SO_2$ and $O_2$ can be produced from the decomposition of metal sulfate. In that point of view, the less is the metal sulfate deomposition temperature, the higher can be the $SO_3$ decomposition activity of the metal component. Therefore, it can be concluded that metal component with the low metal sulfate decomposition temperature is the pre-requisite condition of the catalysts for $SO_3$ decomposition reaction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• 보존과학연구
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• s.22
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• pp.93-114
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• 2001

The composition analysis of Danchung pigments at Geunjeongjeon Hall in Gyeongbokgung Palace were carried out by FXRF and MXRD. The analytical result of the inside pigments at Geunjeongjeon showed that these painted in use the mineral pigments. Gold pigment was pure gold(Au).The main composition identified in green pigments were chalcanthite($CuSO_4$.$5H_2O$) and celadonite($K(Mg, Fe, Al)_2$.$(Si, Al)_4O_10(OH)_2$ ). Red pigments werecinnnabar(HgS).The analytical result of the outside pigments at Geunjeongjeon revealed that these applied to the artificial synthetic pigment. Yellow pigment was chromeyellow($PbCrO_4$). The main composition identified in red pigments were red lead($Pb_3O_4$)and hematite($Fe_2O_3$). Green pigments were emeral green($C_2H_3A_s3Cu_2O_8$) and chromegreen($Cr_2O_3$). Blue pigment was lazurite($Na_6Ca2Al_6Si_6O_24(SO_4)_2$), titanium dioxide($TiO_2$) of white pigment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Macromolecular Research
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• v.15 no.5
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• pp.430-436
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• 2007

The dinuclear half-sandwich CGCs (constrained geometry catalyst) with a polymethylene bridge, $[Ti({\eta}^5 : {\eta}^1-indenyl)SiMe_2NCMe_3]_2(CH_2)_n]$[n = 6 (1) and 12 (2)], have been employed in the copolymerization of ethylene and norbornene (NBE). To compare the mononuclear metallocene catalysts; $Ti({\eta}^5 : {\eta}^1-2-hexylindenyl)SiMe_2NCMe_3$ (3), $(Cp^* SiMe_2NCMe_3)$Ti (Dow CGC) (4) and ansa-$Et(Ind)_2ZrCI_2$ (5), were also studied for the copolymerization of ethylene and NBE. It was found that the activity increased in the order: 1 < 2 < 3 < 5 < 4, indicating that the presence of the bridge between two the CGC units contributed to depressing the polymerization activity of the CGCs. This result strongly suggests that the implication of steric disturbance due to the presence of the bridge may playa significant role in slowing the activity. Dinuclear CGCs have been found to be very efficient for the incorporation of NBE onto the polyethylene backbone. The NBE contents in the copolymers formed ranged from 10 to 42%, depending on the polymerization conditions. Strong chemical shifts were observed at ${\delta}$42.0 and 47.8 of the isotactic alternating NBE sequences, NENEN, in the copolymers with high NBE contents. In addition, a resonance at 47.1 ppm for the sequences of the isolated NBE, EENEE, was observed in the $^{13}C-NMR$ spectra of the copolymers with low NBE contents. The absence of signals for isotactic dyad at 48.1 and 49.1 ppm illustrated there were no isotactic or microblock (NBE-NBE) sequences in the copolymers. This result indicated that the dinuclear CGCs were effective for making randomly distributed ethylene-NBE copolymers.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.72-78
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• 1998

Polarization mode converters have been produced by utilizing Ti:LiNbO$_{3}$ channel waveguide and strain-optic effect. Shear strain for periodic perturbations of optical channel waveguides and phase matching can be obtained by an evaporated periodic SiO$_{2}$ thin film at 300.deg. C. The electrodes located on the either side of waveguide provide a means to electro-optically tune the wavelength for maximum polarization conversion via the electrooptic effect. The maximum conversion effeciency was observed at 21.deg. C for V=0 and 46.deg. C for V=30V aro the device having 7 .mu.m waveguide wiith and 350 periodic pads. The dependence of the number of pads on conversion efficiency was observed experimentally.fficiency was observed experimentally.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.63-71
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• 1997

The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/$ZnS:TbF_{3}$ has been fabricated. Insulate layers used (Pb,La)$TiO_{3}$ and $SiO_{2}$ thin films. The emission color was white. The TFEL device employing ZnS:Mn/$ZnS:TbF_{3}(8000{\AA})$ stacked phosphor layers showed the threshold voltage of $78V_{rms}$. And the brightness of the TFEL device was $400{\mu}W/cm^{2}$ at the applied voltage of $100V_{rms}$. The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.