• 한국세라믹학회지
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• 제43권2호
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• pp.114-120
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• 2006

Nano-size Au particle doped $TiO_2$ films were prepared with $Ti(OC_3H_7^i)_4$, polyvinylpyrrolidone(PVP), $HAuCl_4$ and $C_3H_7OH$ etc. by sol-gel method. $TiO_2$ gel films were obtained by the dip-coating method on the $SiO_2$ glass substrates, and then heat-treated at $700^{\circ}C$ for 10 min. The thickness of $TiO_2$ films were $0.7\~1.8\;{\mu}m$. It was found that the thickness of films prepared from PVP containing solution was about $2\~8$ times higher values than that of thin films without PVP. The size of Au particles doped in the films were about $350\~750\;nm$. Nano-size Au particle dispersed $TiO_2$ films showed high absorption peak at visible region 450nm, which made them good candidates for non-linear optical materials and photo-catalytic materials. The contact angle of $TiO_2$ film for water was $12.5^{\circ}$, and therefore it is clear that $TiO_2$ films have very high hydrophilic properties and the self-cleaning effects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.50-53
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• 2002

YMnO$_3$ thin films were spun-coated on the Pt/Ti/SiO$_2$/Si substrates by sol-gel process using alkoxides, and then dried on hot plates from 300 to 450 $^{\circ}C$. The prepared YMnO$_3$ thin films were annealed at 850 $^{\circ}C$ in O$_2$ atmosphere for 1 h. The crystallization of YMnO$_3$ thin films were improved to preferred c-axis orientation and the dielectric characteristics were progressed by increasing the drying temperature. The range of dielectric constant of thin film dried at 450 $^{\circ}C$ is 12.9-22.3 and close to that of YMnO$_3$ single crystal. The ferroelecrtic property of YMnO$_3$ thin film was observed on the YMnO$_3$ films. The maximum remnant polarization (2Pr) of YMnO$_3$ thin films dried at 450 $^{\circ}C$ was about 2.91 ${\mu}$ C/cm2. It was suggested that the drying temperature affect to the initial stage of thin film growth of preferred c-axis orientation.

• 한국세라믹학회지
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• 제37권6호
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• pp.604-611
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• 2000

Glass-ceramics containing a cordierite (2MgO-2Al2O3-5SiO2) as a main crystal phase was prepared from MgO-Al2O3-SiO2 system glass through a controlled 2-step heat treatment for the application to magnetic memory disk substrate for higher storage capacity. Parent glasses prepared with addition of CeO2 as a fulx and TiO2 as a nucleating agent were crystallized by a 2-step heat treatment i.e. nucleation and crystal grwoth. Then the maximum nucleation and crystal growth rates were investigated and several properties such as bending strength, surface hardness and surface roughness were also studied for heat treated glass. As a result, only a $\alpha$-cordierite was precipitated as a main crystal phase for all heat treatment conditions and the maximum nucleation and crystal growth rates were 2.4$\times$109/㎣.hr at 80$0^{\circ}C$ and 0.3${\mu}{\textrm}{m}$/hr at 915$^{\circ}C$ respectively. After being nucleated at 80$0^{\circ}C$ for 5 hours and then crystallized at 915$^{\circ}C$ for 1 hour, the heat treated glass had a crystal volume fraction of 17.6% and crystal size fo 0.3${\mu}{\textrm}{m}$, and showed the optimum properties for the application to magnetic memory disk substrates as follows. ; Bending strength of 192 MPa, Vidkers hardness of 642.1kgf/$\textrm{mm}^2$, and surface roughness of 27$\AA$.

• 한국환경과학회지
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• 제20권2호
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• pp.251-260
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• 2011

$TiO_2$- and $SiO_2$-supported $Co_3O_4$, Pt and $Co_3O_4$-Pt catalysts have been studied for CO and $C_3H_8$ oxidations at temperatures less than $250^{\circ}C$ which is a lower limit of light-off temperatures to oxidize them during emission test cycles of gasoline-fueled automotives with TWCs (three-way catalytic converters) consisting mainly of Pt, Pd and Rh. All the catalysts after appropriate activation such as calcination at $350^{\circ}C$ and reduction at $400^{\circ}C$ exhibited significant dependence on both their preparation techniques and supports upon CO oxidation at chosen temperatures. A Pt/$TiO_2$ catalyst prepared by using an ion-exchange method (IE) has much better activity for such CO oxidation because of smaller Pt nanoparticles, compared to a supported Pt obtained via an incipient wetness (IW). Supported $Co_3O_4$-only catalysts are very active for CO oxidation even at $100^{\circ}C$, but the use of $TiO_2$ as a support and the IW technique give the best performances. These effects on supports and preparation methods were indicated for $Co_3O_4$-Pt catalysts. Based on activity profiles of CO oxidation at $100^{\circ}C$ over a physical mixture of supported Pt and $Co_3O_4$ after activation under different conditions, and typical light-off temperatures of CO and unburned hydrocarbons in common TWCs as tested for $C_3H_8$ oxidation at $250^{\circ}C$ with a Pt-exchanged $SiO_2$ catalyst, this study may offer an useful approach to substitute $Co_3O_4$ for a part of platinum group metals, particularly Pt, thereby lowering the usage of the precious metals.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.313-313
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• 2010

$BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 추계학술발표대회 개요집
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• pp.109-111
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• 2004

20 vol.$\%$ SiC를 포함한 두 층간의 $Si_{3}N_{4}/SiC$ 나노 복합재료는$\alpha$ $-Si_3N_4$,13 nm 크기의 나노탄소 분말 그리고 $5\;wt$\%\;Y_2O_3$의 분말로 두 단계 소결을 통하여 제작된다. $Si_3N_4$ 입계 사이의 결합은 소결 후 변하지 않고 남은 compact와 $51\~62\%$의 기공으로 얻어진 표면적 사이의 반응에 의해 생성된다. 이 연구에서는 Ti 합금을 SiC 층에 브레이징을 이용하여 제작하고 기계적 특성을 연구하였다. 다양한 변형율과 결합물의 강도, 변형율 증가에 따른 층간 변화를 연구하였다. 층간 파괴 형태는 금속과 브레이징 합금 사이의 파괴, 세라믹과 브레이징 합금 사이의 파괴, 그리고 세라믹 내부에서의 파괴를 보였다.

• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.598-601
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• 2015

The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

• 한국재료학회지
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• 제7권5호
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• pp.381-385
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• 1997

PEMOCVD에 의해서 SrBi$_{2}$Ta$_{2}$O$_{9}$밥막이 낮은 온도에서 성공적으로 Pt/Ti/SiO$_{2}$Si위에 증착되었다. 5$50^{\circ}C$에서 증착된 200nm박막은 치밀하고 작은 결정립을 보였으며 3V의 인가전압하에서 이력곡선은 포화되기 시작하였다. 3V에서 박막은 잔류분극 (P$_{r}$)과 항전계(E$_{c}$)는 각각 15$\mu$/$\textrm{cm}^2$과 50kV/cm이었다. 6V bipolar square pulse의 피로측정에서 박막은 1.0x$10^{11}$cycles까지 피로 현상을 보이지 않았다. PEMOCVD에 의해서 5$50^{\circ}C$에서 증착된 SBT박막은 비휘발성 기억소자에 충분히 활용할 수 있다.다.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.90-90
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode($Pt/Ti.SiO_2/Si$) using RF sputtering method. The dielectric constant of SBN thin films were increased with the increase of annealing temperature. The maximum dielectric constant of SBN thin film is obtained by annealing at 700[$^{\circ}C$]. The dielectric constant and dielectric loss had a stable value within -5~+5[V].