• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.139-139
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• 2010

금속 실리사이드 나노입자는 열적 및 화학적 안정성이 뛰어나고, 절연막내에 일함수 차이에 따라 깊은 양자 우물구조가 형성되어 비휘발성 메모리 소자를 제작할 수 있다. 그러나 단일 $SiO_2$ 절연막을 사용하였을 경우 저장된 전하의 정보 저장능력 및 쓰기/지우기 시간을 향상시키는 데 물리적 두께에 따른 제한이 따른다. 본 연구에서는 터널장벽 엔지니어링을 통하여 물리적인 두께는 단일 $SiO_2$ 보다는 두꺼우나 쓰기/지우기 동작을 위하여 인가되는 전기장에 의하여 상대적으로 전자가 느끼는 상대적인 터널 절연막 두께를 감소시키는 방법으로 동작속도를 향상 시킨 $SiO_2/Si_3N_4/SiO_2$ 및 $Si_3N_4/SiO_2/Si_3N_4$ 터널 절연막을 사용한 금속 실리사이드 나노입자 비휘발성 메모리를 제조하였다. 제조방법은 우선 p-type 실리콘 웨이퍼 위에 100 nm 두께로 증착된 Poly-Si 층을 형성 한 이후 소스와 드레인 영역을 리소그래피 방법으로 형성시켜 트랜지스터의 채널을 형성한 이후 그 상부에 $SiO_2/Si_3N_4/SiO_2$ (2 nm/ 2 nm/ 3 nm) 및 $Si_3N_4/SiO_2/Si_3N_4$ (2 nm/ 3 nm/ 3 nm)를 화학적 증기 증착(chemical vapor deposition)방법으로 형성 시킨 이후, direct current magnetron sputtering 방법을 이용하여 2~5 nm 두께의 $WSi_2$ 및 $TiSi_2$ 박막을 증착하였으며, 나노입자 형성을 위하여 rapid thermal annealing(RTA) system을 이용하여 $800{\sim}1000^{\circ}C$에서 질소($N_2$) 분위기로 1~5분 동안 열처리를 하였다. 이후 radio frequency magnetron sputtering을 이용하여 $SiO_2$ control oxide layer를 30 nm로 증착한 후, RTA system을 이용하여 $900^{\circ}C$에서 30초 동안 $N_2$ 분위기에서 후 열처리를 하였다. 마지막으로 thermal evaporator system을 이용하여 Al 전극을 200 nm 증착한 이후 리소그래피와 식각 공정을 통하여 채널 폭/길이 $2{\sim}5{\mu}m$인 비휘발성 메모리 소자를 제작하였다. 제작된 비휘발성 메모리 소자는 HP 4156A semiconductor parameter analyzer와 Agilent 81101A pulse generator를 이용하여 전기적 특성을 확인 하였으며, 측정 온도를 $25^{\circ}C$, $85^{\circ}C$, $125^{\circ}C$로 변화시켜가며 제작된 비휘발성 메모리 소자의 열적 안정성에 관하여 연구하였다.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.2
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• pp.85-89
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• 2006

To research of the improved mechanical properties of materials for spectacle lens cutting, SiC and TiC were used as the main powder. Also, $Al_2O_3$ and $Y_2O_3$ was included as a sintering additive. The weight ratio of the alumina($Al_2O_3$) to yttria($Y_2O_3$) was set to 1:1. The materials for spectacle lens cutting were fabricated by hot-pressing at $1810^{\circ}C$ for 1h and subsequently annealed at $1860^{\circ}C$ for 3, 6 and 12h to initiated grain growth. The longer annealing time is, the bigger the grain size is. The microstructures were observed by scanning electron microscopy (SEM). The SEM images were quantitatively analyzed by image analysis (Image-Pro Plus, Media Cybernetics, Maryland, U.S.A.). Crack deflection by elongated SiC grains was most frequently observed as the dominant toughening mechanism. Crack deflection was generally observed for elongated SiC grains with aspect ratio(AR) > 2.5 and grain thickness < $2.3{\mu}m$. Crack bridging was also observed as one of the operating toughness mechanism.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.244-247
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• 1999

The(Sr$\sub$0.85/Ca$\sub$0.15/) TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at room temperature is close to stoichiometry(1.102 in A/B ratio). Also, SCT thin films deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$].The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$].

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.106-106
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• 2015

In this study, we investigated electrochemically formed nanotube shape on ternary Ti-25Ta-xHf alloys with Hf contents. Ti-25Ta-xHf (x=0~15 wt.%) alloys were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1050^{\circ}C$ for 2h and then water quenching. The specimens were cut from ingots to 4 mm thickness and first ground and polished using SiC paper (grades from #100 to #2000). The anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. The formation of nanotubular film was conducted by electrochemical method in mixed electrolytes with 1 M $H_3PO_4$ + 0.8 wt. % NaF at 30 V for 2 h. The morphologies of nanotube depended on the Hf content in Ti-25Ta-xHf ternary system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.784-787
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• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• Bulletin of the Korean Chemical Society
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• v.29 no.3
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• pp.609-614
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• 2008

A periodic mesoporous organosilica material was synthesized by microwave heating (PMO-M) using 1,2-bis(trimethoxysilyl)ethane as a precursor in a cationic surfactant solution, and textural properties were compared with those of the product produced by conventional convection heating (PMO-C). These synthesized materials were characterized using XRD, TEM/SEM, N2 adsorption isotherm, 29Si and 13C NMR, and TGA, which confirmed their good structural orders and clear arrangements of uniform 3D-channels. Synthesis time was reduced from 21 h in PMO-C to 2-4 h in PMO-M. PMO-M was made of spherical particles of 1.5-2.2 m m size, whereas PMO-C was made of decaoctahedron-shaped particles of ca. 8.0 m m size. Effect of synthesis temperature, time, and heating mode on the PMO particle morphology was examined. The particle size of PMO-M could be controlled by changing the heating rate by adjusting microwave power level. PMO-M demonstrated improved separation of selected organic compounds compared to PMO-C in a reversed phase HPLC experiment. Ti-grafted PMO-M also resulted in higher conversion in liquid phase cyclohexene epoxidation than by Ti-PMO-C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.829-835
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• 1989

Devitrifing solder glasses in a specific group of glass ceramic materials are extensively used in hermetically sealing alumina electronics packages. Preferred frit glass compositions of this study consist of 37~40wt% PbO, 35~40wt% ZnO, 18~20wt% B2O3, 1~3wt% SiO2, 0~6wt% TiO2. The coated frit glasses crystallize during firing and form a strong hermetic seal. DTA and X-ray diffraction were used to characterize crystallization of the glass frit. Frit seal containing 2wt% TiO2 has crystallization temperature of 550~57$0^{\circ}C$ with surface nucleation. Frit seal containing 6wt% TiO2 has crystallization temperature of 515~5$25^{\circ}C$ with bulk nucleation, and the main crystalline phase was perovskite lead titanate having minus expansion coefficient. The average activation energy for the crystallization calculated from Ozawa equation was 65$\pm$10kcal/mol.