• 전자공학회논문지D
• /
• 제36D권6호
• /
• pp.61-70
• /
• 1999

등 간격을 갖는 동일한 구조의 $Ti:LinbO_3$ 세 도파로와 그 위에 CPW 구조 Al 전극을 갖는 광스위치를 설계, 제작, 실험하였다. z-cut $LinbO_3$ 기판상에 $1025^{\circ}C$에서 6시간 동안 Ti 패턴을 확산시킨 세 도파로 방향성 결합기를 제작하였다. TM 모드의 전파 손실을 줄이기 위해 $1.2{\mu}m$ 두께의 $SiO_2$ 박막을 PECVD로 증착시킨 후, 그 위에 광스위칭을 위하여 Al 전극을 형성시켰다. ${\lambda}=1.3{\mu}m$의 입사광에 대해서 거의 완벽한 광 coupling이 두 바깥 도파로 사이에서 일어났다. 새 도파로를 반대칭적으로 detuning 되도록 전계가 가해졌을 때 광 스위칭 현상이 일어남을 확인하였다.

• 대한화학회지
• /
• 제50권3호
• /
• pp.243-246
• /
• 2006

박막은 Pt/Ti/SiO2/Si 기판 위에 구연산 졸을 이용하여 spin coating에 의해 제작하였다. 기판위에 코팅된 구연산 졸을 380oC에서 15분간 건조시킨 후 750oC에서 10분간 열처리하여 박막을 얻었다. 얻어진 박막은 X-선 회절분석 결과 R3m의 결정구조를 가짐을 알수 있었고, 전기화학적 특성의 측정결과 1차 방전용량은 0.35Ah/cm2-m로 측정되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권4호
• /
• pp.232-238
• /
• 2000

PZT thin films(3500 ) have been prepared onto $Pt/Ti/SiO_2/Si$ substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at $700^{\circ}C$ for 60 seconds were like these remanent polarization were $12.1 \muC/cm^2$, coercive field were 110 kV/cm, leakage current density were $4.1\times10-7 A/cm^2,\; \varepsilonr=442,$ and remanent polarization were decreased by 22% after 1010 cycles, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.240-243
• /
• 1999

(Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.740-742
• /
• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
• /
• pp.69-71
• /
• 2002

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

• 한국재료학회지
• /
• 제9권12호
• /
• pp.1196-1204
• /
• 1999

(hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] 구리원을 액체분사법으로 공급하여 반응성 스퍼터 증착된 PVD-TiN과 급속열처리 변환된 RTP-TiN 기판상에 구리를 유기금속 화학증착법으로 성장시키고, 증착조건과 기판 종류가 박막의 증착율, 결정구조 및 미세조직, 전기비저항 등에 미치는 영향을 분석하였다. 구리원 유량 0.2ccm에서 증착반응은 Ar 유량 200sccm까지 물질전달 지배과정과 전압 1.0Torr 이상에서 기화기에서의 공급율속을 보였다. 전압 0.6Torr일 때 활성화에너지는 155~225$^{\circ}C$의 표면반응 지배영역에서 12.7~14.1kcal/mol의 값을 나타내었으며, 225$^{\circ}C$ 이상의 기판온도에서는 $H_2$ 첨가에 따른 증착율 개선이 간응한 것으로 판단되었다. 증착층은 기판온도 증가에 따라 3차원 island 양식으로 성장하였으며, 증착초기 구리 핵생성밀도가 큰 RTP-TiN상 증착층이 PVD-TiN상보다 현저한 (111) 우선방위와 낮은 전기비저항값을 나타내었다. 구리박막의 전기비저항은 결정립간 연결성이 양호한 165$^{\circ}C$에서 가장 낮았으며, 증착온도에 따른 박막 미세구조 변화로 인해 그 거동은 3개의 영역으로 구분되어 나타났다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.132-135
• /
• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.1483-1484
• /
• 2000

Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.861-864
• /
• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.