• 보존과학연구
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• s.22
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• pp.93-114
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• 2001

The composition analysis of Danchung pigments at Geunjeongjeon Hall in Gyeongbokgung Palace were carried out by FXRF and MXRD. The analytical result of the inside pigments at Geunjeongjeon showed that these painted in use the mineral pigments. Gold pigment was pure gold(Au).The main composition identified in green pigments were chalcanthite($CuSO_4$.$5H_2O$) and celadonite($K(Mg, Fe, Al)_2$.$(Si, Al)_4O_10(OH)_2$ ). Red pigments werecinnnabar(HgS).The analytical result of the outside pigments at Geunjeongjeon revealed that these applied to the artificial synthetic pigment. Yellow pigment was chromeyellow($PbCrO_4$). The main composition identified in red pigments were red lead($Pb_3O_4$)and hematite($Fe_2O_3$). Green pigments were emeral green($C_2H_3A_s3Cu_2O_8$) and chromegreen($Cr_2O_3$). Blue pigment was lazurite($Na_6Ca2Al_6Si_6O_24(SO_4)_2$), titanium dioxide($TiO_2$) of white pigment.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1129-1135
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• 1999

The reduction of $SO_2$ by CO over supported cobalt catalysts was investigated within the temperature range of $350{\sim}550^{\circ}C$, initial $SO_2$ concentration of 1000~10000 ppm, $CO/SO_2$ molar ratio of 1.0~3.0 and space velocity of $5000{\sim}15000h^{-1}$. Several types of supports such as ${\gamma}-Al_2O_3$, $TiO_2$ were tested. The $SO_2$ conversion and selectivity to elemental sulfur were investigated using a differential fixed bed reactor at atmospheric pressure. The catalyst prepared by wet impregration of 5 wt % cobalt on ${\gamma}-Al_2O_3$ showed $SO_2$ conversion higher than 90% and COS yield lower than 6% at temperature above $400^{\circ}C$. The optimum $CO/SO_2$ molar ratio was investigated as 2.0. At higher $CO/SO_2$ molar ratio, the $SO_2$ conversion became higher but the main product was COS. The effect of $SO_2$ concentration and space velocity over $SO_2$ conversion and COS yield was not appreciable in the experimental range. The activated cobalt phase was detected as $CoS_2$ and the $CoS_2$ phase unchanged even after reaction.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.503-510
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• 2005

In this research, composite alumina was prepared to add the various promoters by sol-gel method and examined its thermal stability. After sintering at $1,200^{\circ}C$, the thermal stability resulted in following order, $Si{\fallingdotseq}La$ > Ti > $Ba{\fallingdotseq}Ce$ > Y > $Zr{\fallingdotseq}Mg$, in accordance with adding the promoters. Especially in case of silica-added alumina, a phase transformation temperature to ${\alpha}$-alumina increased about $150^{\circ}C$ and after sintering at $1,200^{\circ}C$, it showed to maintain in ${\gamma}$-form and ${\delta}$-form alumina phase. Also it showed an increase of surface area from $3m^2/g$ to $71m^2/g$ compared with pure ${\alpha}$-alumina. In the case of silicaadded alumina, the characterization change of this alumina particle resulted in a delay of phase transformation because Si-O-Al bond was increased when sintered at high temperature. In case of lanthanum-added alumina, there was a sintering delay phenomenon in inter-particles as $LaAlO_3$ structure existed. The existence of lanthanum structure was confirmed by XRD and XPS analysis. It appeared on the alumina surface as $La_2O_3$ structure when it was sintered under $1,000^{\circ}C$, as the perovskite structure of $LaAlO_3$ at above $1,000^{\circ}C$ and as the magneto-plumbite structure of $LaAl_{11}O_{18}$ at above $1,300^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.99-108
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• 1994

Films of glass-ceramics $Li_2O-Al_2O_3-SiO_2$(LAS)system were prepared on substrate of an iron plate(SCP) by sol-gel technique using metal alkoxide such as Si$(OC_2H_5)_4$,Al$(OC_2H_9)_3$) and Ti$(OC_2H_6)_4$). Sol which was made by means of simple spray coating, on the substrate was hydrolyzed at 75~$80^{\circ}C$ in moisture cabinet (80~90 % humidity) to form the multicomponent gel. The films up to about 0.8~1.0$mu extrm{m}$ in thickness can be obtained by repeating operation, spraylongrightarrowhydrolysis and condensationlongrightarrowdryinglongrightarrowheating and crystallization at $700^{\circ}C$ for 3~5min. The far-infrared radiation spectra of the coated films on substrate were examined by FT-IR and of films was also observed by scanning electron micrograph technique. The thermal evaluation of the gel-film is followed by TG/DTA measurements. The structure evaluation is followedd X-ray diffraction. These results suggest that this process is applicable to far-infrared radiat at thin film technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Journal of Conservation Science
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• v.22
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• pp.43-60
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• 2008

This study is investigated the characteristics and the comparison on blackware and whiteware at Gilmyeong-ri kilns, located Poncheon-si, Geonggi province at AD 19c using scientific analysis. It is measured by scientific analysis classified as microstructure observation, physical methods which involved chromaticity, specific gravity, absorption ratio and porosity, and chemical analysis of components of body and glaze. As a result, a particle and a pore of body surface appeared differently by the degree of vitrification. In glaze, Blackware have better on good vitrification than whiteware in the microstructure observation. The physical characteristics of chromaticity, specific gravity, absorption ratio and porosity differed according to degree of vitrification rather than porcelain types. In composition, body of blackware have higher ratio of $Fe_2O_3$ and $TiO_2$ than of whiteware. Also glaze of blackware have higher ratio of $Fe_2O_3$ and $TiO_2$, and lower ratio of $SiO_2$ and $Al_2O_3$ than whiteware. Especially, blackware have higher ratio in the composition of CaO and $P_2O_5$ by which ash is used or not.

• KSBB Journal
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• v.6 no.4
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• pp.425-429
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• 1991

Porous glasses were prepared from $TiO_2$ containing borosilicate glass by the phase separation. Pore distribution and surface area of porous glasses were invesigated by SEM and porosimeter. As temperature and heating time increase. The pore size and volume increased, but the specific surface area decreased above the critical temperature. The specific surface area and pore size showed more sensitive change on the variation of heating temperature than of heating time.

• Resources Recycling
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• v.26 no.6
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• pp.58-64
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• 2017

Leaching of black dross with HCl solution was conducted to find a suitable process to recover valauble materials. In this work, the leaching behavior of the components was compared between black dross and the residues after water treatment. All the components except $TiO_2$ in the black dross were dissolved by HCl solution in the experimental ranges. Treatment of the black dross with water to recover the salts has negative effect on the leaching of $Al_2O_3$, MgO and $SiO_2$. The reactions occuring during the leaching were discussed. At an optimum leaching condition of 3 M HCl and $90^{\circ}C$, the leaching percentage of $Al_2O_3$, MgO and $SiO_2$ was 85, 100 and 40%, respectively.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.3
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• pp.77-80
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• 2003

An innovative ozonizer has been developed using a high frequency, surface discharge and a high purity Ti-Si-AI ceramic catalyst as a dielectric component. Using a type of thin film, a thin cylindrical compound ceramic catalyst layer was adhered to the outside surface of its inner electrode. An alternating current (AC) exciting voltage with frequencies from 0.6 KHz to 1.0 KHz and peak-to-peak voltages of 4-6 ㎸ was applied between the electrodes to produce a stable high-frequency silent discharge. A substantial reduction of the exciting voltage was also enabled by means of a thin Ti-Si-Al ceramic catalyst tube. As a result, the ozonizer can effortlessly obtain the required ozone concentration (50-60 g/$m^2$ for oxygen) and high ozone efficiency consumption power (180 g/kWh for oxygen) with-out the assistance of any particular methods. For purposes of this experiment, oxygen gas temperature was set at 2$0^{\circ}C$, with an inner reactor pressure of 1.6 atm at 600 Hz and a flow rate of 2 l/min.