• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.544-549
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-39vo1.%TiB$_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2O_3+Y_2O_3$ and the sintering temperature. The result of phase analysis for the SiC-39vo1.%TiB$_2$ composites by XRD revealed $\alpha -SiC(6H),\; TiB_2,\; and YAG(Al_5Y_3O_{12})$ crystal phase. The relative density of SiC-39vo1.% $TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.8 MPa.m_{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$additives at $1750^{\circk}C$. The electrical resistivity of the SiC-39vo1.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25S^{\circ}C \;to\; 700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.603-608
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• 2017

$Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1110-1111
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• 2006

[ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

• Journal of Korea Foundry Society
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• v.23 no.2
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• pp.77-85
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• 2003

Some alloying elements such as Cr, B, Ti and Si were added individually or as a mixture to Fe-30 at.%Al alloys. The alloys were melted using an arc furnace and then heat-treated for homogenization at 1000$^{\circ}C$ for 7 days and followed by rolling at 1000$^{\circ}C$. The alloying elements on rolling characteristics were investigated by the microstructures and fracture mode before and after rolling. The microstructures before rolling showed that all of the alloys had equiaxed grains. On the other hand, the microstructures of rolling plane as well as its perpendicular plane became elongated after rolling. The alloys such as Fe-30Al, Fe-30Al-3Ti, Fe-30Al-0.5B, Fe-30Al-5Cr and Fe-30Al-3Ti-0.5B revealed better rolling behaviour from the point that intergranular and cleavage fractures were not fundamentally occurred. But the addition of 5Ti or 3Si to Fe-Al alloys had detrimental effects. The Ti-added alloy system such as Fe-30Al-5Ti, Fe-30Al-5Ti-5Cr, Fe-30Al-3Ti-5Cr and Fe-30Al-5Ti-0.5B were cracked through grain and showed cleavage fracture. The Si-added alloy system such as Fe-30Al-5Si, Fe-27Al-3Si and Fe-27Al-5Cr-3Si were cracked along the grain boundary and showed intergranular fracture. $DO_3{\leftrightarrow}B_2$ transition temperature of Fe-30at.%Al alloy was 520$^{\circ}C$, whereas the addition of 3Ti and 3Ti+0.5B comparably increased the temperature to 797 and 773$^{\circ}C$, respectively.

• Journal of Korea Foundry Society
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• v.23 no.2
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• pp.63-68
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• 2003

Al-Ti-C grain refiner form a relatively new alternative to the existing class of Al-Ti-B type grain refiners for achieving fine equiaxed structures in aluminum alloys during casting and solidification. The present study was carried out to investigate the influence of Al-Ti-C master alloys on the grain structure of Al-7Si alloys. The present study also investigates the relationship between grain refining efficiency and concentrations of Fe and Si in hypo-eutectic Al-Si alloys using Al-3Ti-0.13C master alloys. It is found that several parameters affect significantly the grain refining performance in silumin alloys. The present study reports the influence of various parameters such as alloy content, master alloy addition level, melt holding time and superheat on the grain refining efficiency in Al-7Si alloys.

• Journal of Welding and Joining
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• v.18 no.5
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• pp.98-104
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• 2000

Aluminum alloys are being employed in automobile parts as strive to reduce overall vehicle weight to meet demands for improved fuel economy and reduction in vehicle emissions. Al-based composites reinforced with ceramic ($Al_2O_3,\;SiC,\;TiC\;and\;B_4C$) applications in a variety of components in automotive engines, such as liners, where the tribological properties of the material are important. In this study, Al-base composites reinforced with TiC particle powders has been developed for producing plasma spray coatings. The composite plasma spray powders were prepared Al-13Si-3Mg(wt%) alloy with TiC(40, 60 and 80wt%) particles ($0.2~5{\mu}textrm{m}$) by drum type ball milling. The composite powders ($36~76{\mu}textrm{m}$) were sprayed with plasma torch. Plasma sprayed coatings were heat-treated at $500^{\circ}C$ for 3 hours. The wear resistances of the plasma sprayed coatings were found to decrease with increasing TiC content and improved with heat treatment. AlSiMg-40% TiC heat-treated coatings were showed the best wear resistance in this study.