• Bulletin of the Korean Chemical Society
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• v.28 no.9
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• pp.1463-1466
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• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.198-198
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• 2016

An ideal orthopedic implant should provide an excellent bone-implant connection, less implant loosening and minimum adverse reactions. Commercial pure titanium (CP-Ti) and Ti alloys have been widely utilized for biomedical applications such as orthopedic and dental implants. However, being bioinert, the integration of such implant in bone was not in good condition to achieve improved osseointegraiton, there have been many efforts to modify the composition and topography of implant surface. These processes are generally classified as physical, chemical, and electrochemical methods. Plasma electrolytic oxidation (PEO) as an electrochemical route has been recently utilized to produce this kind of composite coatings. Mg ion plays a key role in bone metabolism, since it influences osteoblast and osteoclast activity. From previous studies, it has been found that Mg ions improve the bone formation on Ti alloys. PEO is a promising technology to produce porous and firmly adherent inorganic Mg containing $TiO_2$($Mg-TiO_2$ ) coatings on Ti surface, and the amount of Mg introduced into the coatings can be optimized by altering the electrolyte composition. In this study, a series of $Mg-TiO_2$ coatings are produced on Ti-6Al-4V ELI dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. Based on the preliminary analysis of the coating structure, composition and morphology, a bone like apatite formation model is used to evaluate the in vitro biological responses at the bone-implant interface. The enhancement of the bone like apatite forming ability arises from $Mg-TiO_2$ surface, which has formed the reduction of the Mg ions. The promising results successfully demonstrate the immense potential of $Mg-TiO_2$ coatings in dental and biomaterials applications.

• Korean Journal of Environmental Agriculture
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• v.22 no.2
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• pp.124-129
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• 2003

The objectives of this study are to manufacture an efficient $TiO_2$, photocatalyst and to delineate optimum operational parameters for TCE (trichloroethylene) degradation in a photocatalytic oxidative reactor. The $TiO_2$ photocatalyst irradiated by 365 nm UV light is expected to increase degradation of TCE in solution by a series of photocatalytic oxidations in the reactor. A new membrane $TiO_2$ photocatalyst wns eventually developed by coating a mixture of Davan-C(0.24 wt%) and PVA(0.16 wt%) on the surface of slips using the slip-casting method. Results show that increase in the number of coating of $TiO_2$ sol on surface of photocatalysts and in the surface thickness improved the endurance and photocatalysts, but these physical modifications caused significant decrease in the overall degradation efficiency of TCE. Pre-aeration or recirculation of the influents to the reactors containing TCE increased degradation efficiency of TCE. The optimum operational conditions far the surface area of photocatalysts and UV light intensity appeared to be $1.47\;mL/cm^2$ and $225\;W/cm^2{\times}100$, respectively, in the reactor. Based on the overall experimental results, the photocatalytic oxidation of TCE with the new membrane $TiO_2$ photocatalyst is found to be very effective under the operational conditions delineated in this study.

• Polymer(Korea)
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• v.36 no.5
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• pp.622-627
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• 2012

This study focuses on mechanical property enhancement and volatile organic compounds (VOCs) reduction characteristic of environmentally-friendly waterborne coatings. We synthesized a series of organic-inorganic hybrid waterborne polyurethanes by using poly(tetramethylene glycol) 2000, polycarbonate diol 2000, isophorone diisocyanate, dimethylolpropionic acid and titanium dioxide. The study on the effects of the R ratio([NCO]/[OH]) and inorganic contents on environmentally-friendly waterborne coatings showed that the R ratio with more than 1.5 is appropriate due to arrangement of hardsegments. The applied $TiO_2$ on films reduced volatile organic compounds (VOCs).

• Journal of the Korean Ceramic Society
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• v.17 no.4
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• pp.213-216
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• 1980

A glass-ceramics material of composition %SiO_2$: 38.50, $Al_2O_3$: 26.00, $Na_2O$: 18.00, CaO: 6.00, MgO: 4.00, $TiO_2$: 7.50 was strengthened by coating a series of glazes$(SiO_2-B_2O_3-Al_2O_3-CaO-PbO-Na_2O-)$, which has lower thermal expansion coefficient than that of the glass-ceramics. The thermal expansion coefficient of the glazes ranges $80~90{\times}10^{-7}$cm/cm/$^{\circ}C$, whereas that of the glass-ceramics is $115{\times}10^{-7}$cm/cm/$^{\circ}C$. The glass-ceramics was identified to be composed of nepheline, carnegieite low form, and meta sodium silicate crystal by X-ray diffraction phase analysis. The glaze, having lower melting point and appropriate thermal expansion coefficient, was tried to be stable and good at secondary heat treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.