• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.100-101
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• 2005

• Transactions of Materials Processing
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• v.8 no.3
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• pp.319-319
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• 1999

From isothermal and cyclic oxidation tests on thermomechanically treated Ti-5%Al, Ti47%Al-4%Cr, and Ti-48%Al-2%Cr-2%Nb alloys at 800, 900, 1000℃ in air, it was found that Ti-48%Al-2%Cr-2%Nb and Ti-47%Al-4%Cr had the best and the worst oxidation resistance, respectively. The oxide scales consisted primarily of TiO₂and Al₂O₃, with and without a small amount of dissolved Cr and 7b ions, depending on the alloy composition. These ions were slightly enriched inside the inner oxide layer, and strongly enriched around the scale-matrix interface. The outer TiO₂-rich layer was formed by the outward diffusion of Ti ions, while the inner (TiO₂+A1₂O₃,) mixed layer was formed by the inward transport of oxygen. The outward movement of Al ions farmed the intermediate Al₂O₃-rich Iayer, above talc prepared alloys.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.949-954
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• 1993

Microstructural development at the ZrO2/NiTi bonding interface and reaction products were examined and identified with SEM and AEM. Ti-oxide, Ti2Ni and Ni2Ti layer were observed whose thickness depends on bonding temperature typically. The development of Ti-oxide layer is related with oxygen ion in ZrO2 and liquid phase Ti2Ni. It is considered that compositional deviation from homogeneity and residual stress caused by thermal expansion mismatch are closely related with the formation of the Ti2Ni phase.

• Journal of Powder Materials
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• v.10 no.4
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• pp.281-287
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• 2003

Ultrafine TiC-15%Co powders were synthesized by a thermochemical process, including spray drying, calcination, and carbothermal reaction. Ti-Co oxide powders were prepared by spray drying of aqueous solution of titanium chloride and $Ti(OH)_2$ slurry, both containing cobalt nitrate, fellowed by calcination. The oxide powders were mixed with carbon powder to reduce and carburize at 1100~125$0^{\circ}C$ under argon or hydrogen atmosphere. Ultrafine TiC particles were formed by carbothermal reaction at 1200~125$0^{\circ}C$, which is significantly lower than the formation temperature (~1$700^{\circ}C$) of TiC particles prepared by conventional method. The oxygen content of TiC-15%Co powder synthesized under hydrogen atmosphere was lower than that synthesized under argon, suggesting that hydrogen accelerates the reduction rate of Ti-Co oxides. The size of TiC-15%Co powder was evaluated by FE-SEM and TEM and Identified to be smaller than 300 nm.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.281-288
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• 2000

To understand the effect of Fe on the oxidation behavior of TiAl alloys, TiAl-(2, 4, 6at% )Fe were oxidized at 800 and 90$0^{\circ}C$ in air. The oxidation resistance of TiAl-Fe alloys increased with increasing an iron content. The scales formed consisted of an outer $TiO_2$ layer, an intermediate $A1_2$$O_3$ layer, and an inner mixed ($TiO_2$+$A1_2$$O_3$) layer, being similar to other common TiAl alloys. But, the scales formed on TiAl-Fe alloys were generally thin compared to those formed on pure TiAl, and contained dissolved iron. Below the oxide scale, an oxygen affected zone was formed. This beneficial effects of Fe on increasing the oxidation resistance and scale adherence of TiAl alloys were attributed to the refinement of oxide grains, increased scale adherence and the enhanced alumina-forming tendency.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• Macromolecular Research
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• v.17 no.3
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• pp.174-180
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• 2009

Chemical modification of titanium/titanium oxide (Ti/$TiO_2$) substrates has recently gained a great deal of attention because of the applications of Ti/$TiO_2$-based materials to biomedical areas. The reported modification methods generally involve passive coating of Ti/$TiO_2$ substrates with protein-resistant materials, and poly(ethylene glycol) (PEG) has proven advantageous for bestowing a nonbiofouling property on the surface of Ti/$TiO_2$. However, the wider applications of Ti/$TiO_2$ based materials to biomedical areas will require the introduction of biologically active moieties onto Ti/$TiO_2$, in addition to nonbiofouling property. In this work, we therefore utilized surface-initiated polymerization to coat the Ti/$TiO_2$ substrates with polymers presenting the nonbiofouling PEG moiety and subsequently conjugated biologically active compounds to the PEG-presenting, polymeric films. Specifically, a Ti/$TiO_2$ surface was chemically modified to present an initiator for atom transfer radical polymerization, and poly(ethylene glycol) methacrylate (pEGMA) was polymerized from the surface. After activation of hydroxyl groups of poly(pEGMA) (pPEGMA) with N,N'-disuccinimidyl carbonate, biotin, a model compound, was conjugated to the pPEGMA films. The reactions were confirmed by infrared spectroscopy, X-ray photoelectron spectroscopy, contact angle goniometry, and ellipsometry. The biospecific binding of target proteins was also utilized to generate micropatterns of proteins on the Ti/$TiO_2$ surface.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.420-423
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• 2003

Coatings of TiCrN ion-plated on a steel substrate was oxidized at $800^{\circ}C$ in air, and their oxidation mechanism was presented. During oxidation, substrate elements and Ti and Cr in the coating always diffused outwardly to form the oxide scale. Simultaneously, oxygen from the atmosphere diffused inward1y to react with Ti and Cr to form $TiO_2$and $Cr_2$$O_3$, respectively. Also, the counter-diffusion of cations and oxygen resulted in some oxygen dissolution in the unoxidized TiCrN coating, and Fe dissolution in the oxide scale. When the Ti content in the coating was high, the $TiO_2$-forming tendency was strong, while when the Cr content was high, the $Cr_2$$O_3$-forming tendency was strong.

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.