• Title/Summary/Keyword: Ti-oxide

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Analysis of Monoclinic Phase Change and Microstructure According to High-temperature Heat Treatment of Oxide-doped YSZ (산화물이 Doping된 YSZ의 고온 열처리에 따른 Monoclinic 상변화 및 미세구조 분석)

  • Gye-Won, Lee;Yong-Seok, Choi;Chang-Woo, Jeon;In-Hwan, Lee;Yoon-Suk, Oh
    • Journal of Powder Materials
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    • v.29 no.6
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    • pp.468-476
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    • 2022
  • Yttria-stabilized zirconia (YSZ) has a low thermal conductivity, high thermal expansion coefficient, and excellent mechanical properties; thus, it is used as a thermal barrier coating material for gas turbines. However, during long-time exposure of YSZ to temperatures of 1200℃ or higher, a phase transformation accompanied by a volume change occurs, causing the YSZ coating layer to peel off. To solve this problem, YSZ has been doped with trivalent and tetravalent oxides to obtain coating materials with low thermal conductivity and suppressed phase transformation of zirconia. In this study, YSZ is doped with trivalent oxides, Nd2O3, Yb2O3, Al2O3, and tetravalent oxide, TiO2, and the thermal conductivity of the obtained materials is analyzed according to the composition; furthermore, the relative density change, microstructure change, and m-phase formation behavior are analyzed during long-time heat treatment at high temperatures.

Synthesis and characterization of perovskite nano-sized (Pb, La)$TiO_3$ powder using mechano chemical process (기계화학공정을 이용한 Perovskite 구조의 (Pb, La)$TiO_3$ 나노 분말 합성 및 특성)

  • Lim, Bo-Ra-Mi;Yang, Jae-Kyo;Lee, Dong-Suk;Noh, Tae-Hyung;Seo, Jung-Hye;Lee, Youn-Seoung;Kim, Hee-Taik;Choa, Yong-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.5
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    • pp.200-204
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    • 2008
  • Mechano Chemical Process (MCP) skips the calcinations steps at an intermediate temperature that is always required in the conventional solid-state reaction because forming phase from raw powder is activated by mechanical energy. In this study, we prepared (Pb, La)$TiO_3$ nanopowder with perovskite structure by only high energy MCP. Especially, the PLT nanopowder was synthesized without any thermal treatment using oxides, not salts as raw powder. This process is also very simple due to dry milling method, unnecessary to dry of powder. The oxide powder was milled up to 12 hr at intervals of an hour using MCP and the pure PLT phase of perovskite structure was formed after milling time of 3 hr. And the average particle size was 20 nm with narrow distribution after milling time of 3 hr from raw powder of several $\mu m$ with inhomogeneous distribution.

Comparison of apical extrusion of intracanal bacteria by various glide-path establishing systems: an in vitro study

  • Dagna, Alberto;El Abed, Rashid;Hussain, Sameeha;Abu-Tahun, Ibrahim H;Visai, Livia;Bertoglio, Federico;Bosco, Floriana;Beltrami, Riccardo;Poggio, Claudio;Kim, Hyeon-Cheol
    • Restorative Dentistry and Endodontics
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    • v.42 no.4
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    • pp.316-323
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    • 2017
  • Objectives: This study compared the amount of apically extruded bacteria during the glide-path preparation by using multi-file and single-file glide-path establishing nickel-titanium (NiTi) rotary systems. Materials and Methods: Sixty mandibular first molar teeth were used to prepare the test apparatus. They were decoronated, blocked into glass vials, sterilized in ethylene oxide gas, infected with a pure culture of Enterococcus faecalis, randomly assigned to 5 experimental groups, and then prepared using manual stainless-steel files (group KF) and glide-path establishing NiTi rotary files (group PF with PathFiles, group GF with G-Files, group PG with ProGlider, and group OG with One G). At the end of canal preparation, 0.01 mL NaCl solution was taken from the experimental vials. The suspension was plated on brain heart infusion agar and colonies of bacteria were counted, and the results were given as number of colony-forming units (CFU). Results: The manual instrumentation technique tested in group KF extruded the highest number of bacteria compared to the other 4 groups (p < 0.05). The 4 groups using rotary glide-path establishing instruments extruded similar amounts of bacteria. Conclusions: All glide-path establishment instrument systems tested caused a measurable apical extrusion of bacteria. The manual glide-path preparation showed the highest number of bacteria extruded compared to the other NiTi glide-path establishing instruments.

Effect of compliance current on resistive switching characteristics of solution-processed HfOx-based resistive switching RAM (ReRAM)

  • Jeong, Ha-Dong;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.255-255
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    • 2016
  • Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$$85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.

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Effect of Vinyl Ethylene Carbonate on Electrochemical Characteristics for Activated Carbon/Li4Ti5O12 Capacitors (활성탄/리튬티탄산화물 커패시터의 전기화학적 특성에 미치는 비닐에틸렌카보네이트의 영향)

  • Kwon, Yong-Kab;Choi, Ho-Suk;Lee, Joong-Kee
    • Journal of the Korean Electrochemical Society
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    • v.15 no.3
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    • pp.190-197
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    • 2012
  • We employed the vinyl ethylene carbonate (VEC) as an electrolyte additive and investigated the effect of the electrolyte additive on the electrochemical performance in hybrid capacitor. The activated carbon was adopted as cathode material, and the $Li_4Ti_5O_{12}$ oxide was used as anode material. The electrolyte was prepared with the $LiPF_6$ salt in the mixed solvent of ethylene carbonate (EC), dimethyl carbonate (DMC), and ethyl methyl carbonate(EMC). We evaluated the electrochemical performance of the hybrid capacitor with increasing the amount of the VEC electrolyte additive, which is known as the remover of oxygen functional group and the stabilizer of the electrode by reducing the surface of electrode, and obtained the superior performance data especially at the addition of the VEC electrolyte additive of around 0.7 vol%. On the contrary, the addition of the VEC more than 0.7 vol% in the electrolyte leads to the degradation in electrochemical performance of hybrid capacitor, suggesting the increase of the side reaction from the excessive VEC additive. X-ray photoelectron spectroscopy (XPS) revealed that the addition of the VEC suppressed the formation of LiF component, which is known as the insulator, on the surface of electrode. The optimized addition of VEC exhibited the improved capacity retention around 82.7% whereas the bare capacitors without VEC additive showed the 43.2% of capacity retention after 2500 cycling test.

Effect of CuO Additions on Microstructures and Piezoelectric Properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ Ceramics (CuO 첨가에 따른 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ 세라믹스의 압전특성과 미세조직의 변화)

  • Jeon, So-Hyun;Kim, Min-Soo;Jeong, Soon-Jong;Kim, In-Sung;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.194-194
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    • 2008
  • Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

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Investigation on Formation of Nanotube Titanium Oxide Film by Anodizing on Titanium in NaF Electrolytes (NaF 전해용액을 이용한 양극산화에 의한 타이타늄 표면의 나노튜브구조의 형성에 관한 연구)

  • Lim, Hyun-Pil;Park, Nam-Soon;Park, Sang-Won
    • Journal of Dental Rehabilitation and Applied Science
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    • v.25 no.2
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    • pp.183-190
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    • 2009
  • The aim of this study is to find the condition of forming the favorable nanotubes by anodizing with NaF and $H_3PO_4$. Machined Ti discs were used for anode, and Platinum net was used for cathode. For electrolyte, $H_3PO_4$ and NaF solution were mixed. We controlled voltage, electrolyte concentration, anodizing time and formed nanotubes on Ti discs. After that, these were washed with distilled water for 24 hours and dried in the $40^{\circ}C$ oven for 24 hours. The surface structure of specimens were analyzed. The results were as follows : At 0.5 wt % NaF, according as increasing voltage and anodizing time, early state of nucleating pores were generated. At 1.0 wt % NaF, 20 V, 20 & 25 min, well-formed nanotubes were observed. At 1.0 wt % NaF, 30 V, structure of nanotube became bigger and interconnected. At 2.0 wt % NaF, no nanotubes were formed and it was unrelated with voltage and time. At 1.0 wt % NaF, 20 V, 20 - 25 min, well-ordered nanotubes were generated on Ti discs. For the formation of favorable nanotubes, it is considered that proper parameters such as electrolyte concentration, voltage, anodizing time are necessary according to the kind of electrolytes.

Fabrication and Analysis of Thin Film Supercapacitor using a Cobalt Oxide Thin Film Electrode (코발트 산화물 박막을 이용한 박막형 슈퍼 캐패시터의 제작 및 특성평가)

  • Kim, Han-Gi;Im, Jae-Hong;Jeon, Eun-Jeong;Seong, Tae-Yeon;Jo, Won-Il;Yun, Yeong-Su
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.339-344
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    • 2001
  • An all solid-state thin film supercapacitor (TFSC) with Co$_3$O$_4$/LiPON/Co$_3$O$_4$ structure was fabricated on Pt/Ti/Si substrate using Co$_3$O$_4$ thin film electrode. Each Co$_3$O$_4$ film was grown by reactive dc reactive magnetron sputtering with increasing $O_2$/[Ar+O$_2$] ratio. Amorphous LiPON electrolyte film was deposited on Co$_3$O$_4$/Pt/Ti/Si in pure nitrogen ambient by using reactive rf magnetron sputtering. The electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ multi-layer structures exhibits a behavior of a bulk-type supercapacitor, even though much lower capacity (from 5 to 25 mF/$\textrm{cm}^2$-$\mu\textrm{m}$) than that of the bulk one. It was found that the TFSC showed a fairly constant discharge capacity with a constant current of 50 $\mu\textrm{A}/\textrm{cm}^2$ at the cut-off voltage 0-2V during 400 cycles. It is shown that the electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ TFSC is dependent upon the sputtering gas ratio. The capacity dependency of electrode films on different gas ratios was explained by different structural, electrical, and surfacical properties.

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The Effect of a Au Based Bonding Agent Coating on Non-Precious Metals-Ceramic Bond Strength (비귀금속 합금에 적용한 Au Based Bonding Agent가 금속-도재 결합에 미치는 영향)

  • Lee, Jung-Hwan;Ahn, Jae-Seok
    • Journal of dental hygiene science
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    • v.9 no.4
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    • pp.405-412
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    • 2009
  • The purpose of this study investigated the effect of Au coating on adhesion between porcelain matrix and metal substructure interface. Titanium, Ni-Cr alloy and Co-Cr alloy are well known as proper metal for the dental restorations. The success of a porcelain fused to metal (PFM) restoration depends upon the quality of the porcelain-metal bond. However, adhesion between dental alloys and porcelain is related to diffusion of oxygen during ceramic firing. The excessive oxidized layers make hard adhesion between dental alloy and ceramic. Ni-Cr and Co-Cr specimens were divided into test and a control group and Titanium specimens were divided into three test groups and a control group. Each group had 20 specimens. The adhesion characteristics of porcelain and metal with Au coating layer and without Au coating layer were observed with scanning electron microscopy(SEM). The adhesion was evaluated by a biaxial flexure test and volume fraction of adherent porcelain was determined by SEM/EDS analysis. Result of this study suggest that Au coating layer is effective barrier to diffuse oxide layer completely protect non-precious alloys from oxidation during the porcelain firing. The SEM photomicrographs of cross-section specimens showed a smooth interface between Au coating layer and metals and porcelain which suggested proper chemical bonding, and no gap, porosity were observed. The mode of failure was mainly adhesive for Ti tested specimens, but mixed failures with adhesive and cohesive were observed in Ni-Cr and Co-Cr specimens. The adhesion between non-precious metals and porcelain would not be improved by Au coating agent. However, It is suggested that the continuous study is required further investigation and development.

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Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes (GaN계 수직형 발광 다이오드를 위한 N-face n-GaN의 인듐계 저저항 오믹접촉 연구)

  • Kang, Ki Man;Park, Min Joo;Kwak, Joon Seop;Kim, Hyun Soo;Kwon, Kwang Woo;Kim, Young Ho
    • Korean Journal of Metals and Materials
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    • v.48 no.5
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    • pp.456-461
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    • 2010
  • We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.