• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Economic and Environmental Geology
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• v.20 no.2
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• pp.85-95
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• 1987

The host rocks of titaniferous magnetite deposits in Gonamsan are alkaline gabbros, which are typical of undersaturated alkaline rocks in terms of the lack of normative quartz. According to field occurrences and petrographic features, these alkaline gabbros are divided into 3 rock types: coarse-grained and pegmatitic rock, medium-grained rock with equigranular texture, and layered cumulate rock. All these rocks mainly contain clinopyroxene(salite), plagioclase(An 43-66), pargasite, and ilmenite. The accessory minerals are apatite, sphene, quartz, and sometimes titaniferous magnetite. Pargasite, sphene, and quartz are considered to be secondary minerals formed by the reaction among clinopyroxene, plagioclase and Fe-Ti oxide at deuteric stage. Fe-Ti oxides generally occur as ilmenite in the alkaline rocks, and titaniferous magnetite in the ore deposits. Layered cumulate rocks are characterized by a recurrence of discontinuous thin mesolayer of clinopyroxene-pargasite within leucolayer mainly composed of plagioclase. Clinopyroxene is cumulus mineral whereas plagioclase, ilmenite and apatite occur as intercumulus minerals. According to the variation diagrams of oxide and trace element contents against the differentiation index, incompatible elements, such as Na, Ba and Sr, show positive correlations whereas compatible elements, such as Mg and Cr, show negative correlations. However some compatible elements, such as Co, Ni and V show irregular variations, reflecting relative cumulate status of cumulus and intercumulus minerals. On the de la Roche multicationic diagram, these alkaline gabbros are distributed along the differentiation curve of undersaturated alkaline series from alkaline basaltic composition through basanitic composition to tephritic composition. Layered cumulate rocks, which are distributed between basanitic composition and tephritic composition, reflect their cumulate character, slightly scattering away from the curve. The medium-grained rock shows higher contents in Ba, Sr and light rare earch elements than the coarse-grained and pegmatitic rock. The former shows two times higher contents of total rare earth elements than the latter, $while(La/Lu)_{cn}$ ratios maintain fairly constant values of 5.08~5.06 in these two rocks. This means that coarse-grained and pegmatitic rock, as compared with the medium-grained rock, was formed by the earlier differentiated magma but rare-earth element distribution pattern remained almost parallel during differentiation. From the data the above mentioned, these alkaline gabbros are considered to be comagmatic and to be formed by intrusions of differentiated magmas in its reservoir.

• Clean Technology
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• v.9 no.3
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• pp.133-144
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• 2003

In this study, Insoluble catalyst electrode for oxide systems were manufactured, by using of them, carried out experiments on electrolytic treatment of dyeing wastewater containing persistent organic compounds, and then made a comparative study of the efficiency of treatment for environmental pollutants and whether each of them is valuable of not as an electrode for soluble electrode(Fe, Al) and insoluble electrode(SUS, R.C.E; Replaced Catalyst Electrode) which were used in the electrolytic system. Besides, it was investigated the conditions for electrolytic treatment to find the maximum efficiency of electrolytic treatment. As the result of this study, by using of insoluble catalyst electrode for oxide can solved the stability of electrode that is one of the greatest problems in order to put to practical use of electrolysis process in the treatment of the sewage and wastewater and the result runs as follows; 1. The durability of insoluble catalyst electrode(R.C.E) can be verified the most favorable when the molar ratio of $RuO_2-SnO_2-IrO_2-TiO_2$(4 compounds system) is 70/20/5/5. 2. The efficiency of treatment was obtained a more than 90% goodness for CODMn and also a good results for T-N removal in the experimental conditions of the distance of electrode 5 mm, time of electrolysis 60 minutes, permissible voltage 10V, processing capacity $0.5{\ell}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.663-669
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• 2014

The electrical characteristics of RRAM with different annealing temperature and thickness have been measured and discussed. The devices with Pt/Ti top electrode of 150nm, Pt bottom electrode of 150nm, $HfO_2$ oxide thickness of 45nm and 70nm have been fabricated. The fabricated device were classified by 3 different kinds according to the annealing temperature, such as non-annealed, annealed at $500^{\circ}C$ and annealed at $850^{\circ}C$. The set and reset voltages and the variation of resistance with temperatures have been measured as electrical properties. From the measurement, it was found that the set voltages were decreased and the reset voltage were increased slightly, and thus the sensing window was decreased with increasing of measurement temperatures. It was remarkable that the device annealed at $850^{\circ}C$ showed the best performances. Although the device with thickness of 45nm showed better performances in the point of the sensing window, the resistance of 45nm devices was large relatively in the low resistive state. It can be expected to enhance the device performances with ultra thin RRAM if the defect generation could be reduced at the $HfO_2$ deposition process.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.205-210
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• 2011

Structural and electrochemical properties of spinel oxide $LiMn_2O_4$ thin films prepared by using a sol-gel method on Pt/Ti/$SiO_2$/Si substrates were investigated. When Li/Mn molar ratio of the film was smaller than 0.5, $Mn_2O_3$hase was found to coexist with $LiMn_2O_4$. Half-cell batteries fabricated using the $LiMn_2O_4$ films as the cathode were put into chargedischarge (C-D) cycles and the change in structural properties of the cathode after the cycles was examined by X-ray diffraction and Raman spectroscopy. As the C-D cycle number increases, the discharge capacity of pure $LiMn_2O_4$ battery gradually decreases, being reduced to 72% of the initial capacity at 300 cycles. Such capacity fading is attributable to the decrease in the number of $Li^+$ ions that return to the tetrahedral sites of the spinel structure during the discharge step and the resultant increase in $Mn^{4+}$ density in the film. Also, $Mn_2O_3$ phase gradually appeared in the film as the cycle number increases.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.23 no.3
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• pp.134-146
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• 1997

Consumers have recently preferred to purchase extensive UV intercepting products, which are waterproof and free from side effects on skin. Testing Cytoroxicity in SR method, cell survivial ratio of UV-B interceptors decreased above 0.08W/V%, and so did that of UV-A interceptors above 0.06W/V%. Also, Patch-test of inorganic UV interceptors resulted in no skin irritation even below 10.0 and 11.25. UV interceptors in the sunlight showed yellowish discoloration in 5 to 14 days. In absorption curves, UV-B was most suitable for Octyl methoxycinnamate and UV-A for Butyl methoxy dibenzoylmethane. Fro this reason, Nylonpoly UVA/UVB the material of OMC and BMDM coated with Nylon & polyethylene, was used as the organic UV interceptor. And zinc oxide and titanium dioxide was used as inorganic UV ibterceptors. The appropriate mixture ratio of ZnO and TiO2 was 6 to 4.6% of ZnO, 4% of TiO2 and 5% of Nylonpoly UVA/UVB were all combined with our sunscreen cream. The SPF value of in-vivo applied to a guinea pig was 34.9 and that of in-vivo was 38.5. Cyclomerhicone and dimerthicone were used in water-in-Silicone system. Ceryl diverhicone and sorbitan sesquioleate were used as emulsifiers and MgSO4, 7H2O, Mg-stearate/Mg-Al-stearate copolymer as emulsification stabilizers. In practical application, each SPF duration of O/W type and W/S type containing sunscreen cream of the same content showed that W/S type of sunscreen cream was 5 times as durable as the other. This product is fit for using in swimming, climbing or skiing. This research is to minimize skin trouble used by UV interceptors and to make one with proper softness, skin safety and UV intercepting efficiency.

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.110-115
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• 2016

We prepared a working electrode (WE) coated with 0 ~ 50 nm-thick indium gallium zinc oxide(IGZO) by using RF sputtering to improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC). Transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS) were used to analyze the microstructure and composition of the IGZO layer. UV-VIS-NIR spectroscopy was used to determine the transparency of the WE with IGZO layers. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with IGZO layer. From the results of the microstructural analysis, we were able to confirm the successful deposition of an amorphous IGZO layer with the expected thickness and composition. From the UV-VIS-NIR analysis, we were able to verify that the transparency decreased when the thickness of IGZO increased, while the transparency was over 90% for all thicknesses. The photovoltaic results show that the ECE became 4.30% with the IGZO layer compared to 3.93% without the IGZO layer. As the results show that electron mobility increased when an IGZO layer was coated on the $TiO_2$ layer, it is confirmed that the ECE of a DSSC can be enhanced by employing an appropriate thickness of IGZO on the $TiO_2$ layer.

• Journal of the Korea institute for structural maintenance and inspection
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• v.23 no.6
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• pp.120-131
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• 2019

Recently, the level of fine dust and ultrafine dust has reached its highest level, threatening the public's health. If the air purifier was not operated indoors, natural ventilation would not be possible. In this study, photocatalyst is applied to building materials to purify air in a passive manner. In order to use photocatalyst for LEFC(Light Emotion Friendly Concrete), it is necessary to secure self-consolidating capability. Therefore, self-consolidating performance was evaluated by slump test, J-ring test and L-box test with UHPC materials applied. Based on these results, the mixture proportion was determined, and the mechanical performance was evaluated by compressive and flexural tests. Concrete blocks were constructed with a fabrication method that improved the existing process of making LEFC. Also, the concrete block was emptied as a way to reduce the use of expensive photocatalyst. Finally, in order to identify the distribution of TiO₂, an EDS analysis was performed.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.