• 제목/요약/키워드: Ti-doped $In_2O_3$

검색결과 339건 처리시간 0.029초

저온연소법에 의한 이산화티탄의 합성 및 메틸렌블루의 광촉매 분해반응 (Synthesis of Titanium Dioxides Using Low Temperature Combustion Method and Photocatalytic Decomposition of Methylene Blue)

  • 백승희;정원영;이근대;박성수;홍성수
    • 공업화학
    • /
    • 제20권3호
    • /
    • pp.329-334
    • /
    • 2009
  • 저온연소법을 이용하여 이산화티탄과 이트륨 이온이 첨가된 이산화티탄을 합성하였다. 합성조건에 따른 입자의 크기와 모양, 결정성 등에 미치는 영향을 알아보았고, 또한 제조된 촉매의 메틸렌블루의 광분해 활성을 조사하였다. XRD 분석 결과로부터 염기성 조건에서 합성된 경우에는 아나타제형 구조만 나타났으나 산성 및 중성에서는 아나타제와 루틸형이 혼합되어 나타났다. CA/TTIP 비에 관계없이 아나타제형 구조만 나타났으며, CA/TTIP 비가 증가할수록 입자의 크기는 작아지는 것을 볼 수 있다. 소성온도가 $600^{\circ}C$ 이상에서는 아나타제 결정구조가 루틸 결정구조로 변환되기 시작하였다. 한편, 입자들의 모양은 소성온도가 높아질수록 구형으로 변화되었으며, 입자의 크기가 증가하였다. 광촉매 반응의 활성은 CA/TTIP 몰비가 증가할수록, 염기성 조건에서 제조한 경우에 더 높게 나타났으며, $500^{\circ}C$에서 소성시킨 경우에 가장 높은 활성을 보여주었다. 그리고 1 mole% 이트륨 이온을 첨가 시킨 것이 가장 높은 광촉매 활성을 보여주었으며, 상업용 촉매인 P-25 경우보다 높은 활성을 보여주고 있다.

Floating zone법에 의한 Nb를 첨가한 strontium titanate 단결정 성장 (Nb doped strontium titanate single crystal growth by floating zone method)

  • 전병식;조현;오근호
    • 한국결정성장학회지
    • /
    • 제5권3호
    • /
    • pp.215-222
    • /
    • 1995
  • Floating zone법으로 $SrTiO_3$$Nb_2O_5$를 02wt% 첨가한 단결정을 육성하였다. 결정성장시 성장분위기로는 air와 질소분위기에서 각각 결정을 육성하였으며, 원료봉의 소결온도 따른 성장계면양상을 조사하였다. 성장조건으로는 성장속도는 5mm/hr, 상부축과 하부축의 회전속도는 30rpm이었고, air분위기시 air의 유량은 1.5 ${\ell}/min$, 질소분위기시 질소가스의 유량은 0.5 ${\ell}/min$이었다. 육성한 결정을 XRD, Laue, chemical etching 등의 분석을 하였으며, 질소분위기에서 annealing 한 후 비저항을 측정하였으며 이를 통해 activation energy를 조사하였다.

  • PDF

PNST세라믹스의 유전 및 변형특성에 관한 연구 (A Study on the Dielectric and Strain Properties of PNST Ceramics)

  • 김진수;이덕출
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
    • /
    • pp.331-334
    • /
    • 1998
  • The solid solutions of the Pb(Sc$\_$0.5/Nb$\_$0.5/)$\_$0.57/Ti$\_$0.43/O$_3$ system were prepared. In the PSNT system, it had been known that two-phase region between the rhombohedral and tetragonal phases was observed between 0.425 of PT at room temperature. In this paper, Fe$_2$O$_3$-doped 0.57PSN-0.43PT composition was prepared by conventional method. The dielectric and strain properties were examined using an computerized measuring apparatus, and the resonance characteristics were measured using an impedance gain phase analyzer. We got the data of dielectric constant, dielectric loss, piezoelectric coefficient, piezoelectric voltage coefficient, frequency constant strain constant mechanical quality factor and electromechanical coupling factor.

  • PDF

ZnO 박막 센서의 TMA 가스 및 Hall 효과 측정 (The Hall Measurement and TMA Gas Detection of ZnO-based Thin Film Sensors)

  • 류지열;박성현;최혁환;이명교;권태하
    • 센서학회지
    • /
    • 제6권4호
    • /
    • pp.265-273
    • /
    • 1997
  • RF 마그네트론 스펏터링 방법으로 ZnO 박막을 성장시켜 TMA 가스 센서를 제작하였다. ZnO 박막의 성장분위기 가스와 첨가불순물이 박막의 표면 캐리어(전자) 농도, Hall 전자 이동도, 전기저항률 및 감도에 미치는 영향을 동작온도와 TMA 가스 농도를 변화시켜가며 조사하였다. 산소분위기에서 성장된 박막이 아르곤의 경우보다, 촉매불순물이 첨가된 박막이 첨가되지 않은 경우보다, 각각 표면 캐리어 농도와 Hall 전자 이동도가 높았고, 높은 감도 및 낮은 전기저항률을 나타내었다. 산소분위기에서 성장되었고, 불순물로 4 wt.%의 $Al_{2}O_{3}$, 1 wt.%의 $TiO_{2}$ 및 0.2 wt.%의 $V_{2}O_{3}$를 첨가한 ZnO 박막으로 만든 센서가 가장 높은 표면 캐리어 농도 $5.95{\times}10^{20}cm^{-3}$ 및 Hall 전자 이동도 $177\;cm^{2}/V{\cdot}s$와 가장 낮은 전기저항률 $0.59{\times}10^{-4}{\Omega}{\cdot}cm$ 및 가장 높은 감도 12.1을 나타내었다. 이때 TMA 가스 농도는 8 ppm, 동작온도는 $300^{\circ}C$였다.

  • PDF

PSN-PMN-PZT 조성의 CeO2첨가에 따른 압전.유전특성 변화 (Piezoelectric and Dielectric Properties on PSN-PMN-PZT Composition according to CeO2 Addition)

  • 윤만순;최용길;어순철
    • 한국전기전자재료학회논문지
    • /
    • 제19권9호
    • /
    • pp.838-842
    • /
    • 2006
  • 0.03Pb$(Sb_{0.5}Nb_{0.5})O_{3}-0.03Pb(Mn{1/3}Nb{2/3)O_{3}-(0.94-x)PbTiO_{3}-xPbZrO_{3}$ ceramics doped with $CeO_{2}$ were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of $CeO_{2}$ content (0.03, 0.05, 0.1 0.3, 0.5 and 0.7 wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Mechanical quality factor ($Q_{m}$) and coupling factor(kp) were obtained from the resonance measurement method. Both $Q_{m}$ and $k_{p}$ were shown to reach to the maximum at 0.1 wt% $CeO_{2}$. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor ($K_{eff}$) as a function of $CeO_{2}$, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer under various alternating electric fields from 10 V/mm to 80 V/mm. It was shown that the stability of resonance frequency and effective electromechanical coupling factor were increased with increasing the $CeO_{2}$ contents.

초음파 분무 열분해법으로 합성한 PTCR Barium Titanate에 미치는 Y와 Mn의 효과 (Effects of Yittrium and Manganese on the PTCR Barium Titanate Synthesized by Ultrasonic Spray Pyrolysis)

  • 김복희;이정형;윤연현;최의석;정웅기
    • 한국세라믹학회지
    • /
    • 제32권10호
    • /
    • pp.1169-1177
    • /
    • 1995
  • Barium nitrate and yittrium nitrate were dissolved into distilled water. Titaium hydroxide precipitated from titanium chloride with NH4OH was dissolved into nitric acid. Each aqueous solution was mixed for 12 hr in the composition of Ba1-xYxTiO3 (x=0.1∼0.6) and the concentration of mixed solution was 0.1 mol/ι. The mixed solution was sprayed with an ultrasonic atomizer and carried into an electric furnace which was kept at 900∼1000$^{\circ}C$ and pyrolyzed. Pyrolyzed powders were collected on the glass filter with vacuum pump. Aqueous Mn solutiion was added into the synthesized powders, mixed with ultrasonic vibration and sintered at 1300∼1400$^{\circ}C$. Synthesized powders were characterized with SEM, XRD, DT-TGA, and BET. Microsture and resistivity of sintered body were investigated with SEM and multimeter. The results of this experiment were as follows; 1) Yittrium dooped BaTiO3 powders were synthesized above 950$^{\circ}C$. 2) The average particle sizes of powders from BET specific surface area and SEM were 0.045$\mu\textrm{m}$, 0.046$\mu\textrm{m}$ respectively. The particle size distribution was narrow in the range of 0.1∼1.0$\mu\textrm{m}$ from SEM. 3) Room temperature resistivity and pmax/pmin of 0.4 mol% Y doped specimen which was sintered at 1375$^{\circ}C$ were 102∼3 (Ω$.$cm) and 102∼3 respectively. 4) Room temperature resistivity and pmax/pmin of 0.4 mol% Y and 0.04 at% Mn added specimen which was sintered at 1375$^{\circ}C$ were 102∼3 (Ω$.$cm) and 106∼7 respectively. 5) Grain growth was inhibited with addition of Y2O3 and enhanced in addition of Mn by 0.05 atm%.

  • PDF

하소온도가 PZT의 Kp와 공진특성에 미치는 영향 (Effect of Calcining Temperature on Planr Coupling Factor and Resonance Characteristics of PZT)

  • 정수태;이우일;조상희
    • 한국세라믹학회지
    • /
    • 제22권1호
    • /
    • pp.47-52
    • /
    • 1985
  • The effect of calcining temperature on planar coupling factor Kp resonance and antiresonance frequency of $Pb(Z_{0.53}Ti_{0.47})O_3$ doped with $Nb_2O_5$ has been investigated. The calcining temperature ranged from $700^{\circ}C$ to 110$0^{\circ}C$ The calcining temperature affected on antiresonance frequency more strongly than the resonance frequency. Therefore the Kp was almost entirely dependent upon the antiresonance frequency. The p and antiresonance frequency of the sample in creased with the calcining temperature reaching a maximum at about 90$0^{\circ}C$ When a poling electric field of 35KV/cm was applied to the sample calcined at 90$0^{\circ}C$ and sintered for two hours at 120$0^{\circ}C$ Kp attained a maximum value of 0.64 which is in good agreement with the results of other investigators.

  • PDF

혼성물리화학기상 증착법으로 여러가지 불순물층 위에 제조한 $MgB_2$ 박막에 대한 연구 (Study of $MgB_2$ Films Grown on Various Impurity Layers by using HPCVD Method)

  • 박세원;성원경;정순길;강원남
    • Progress in Superconductivity
    • /
    • 제10권1호
    • /
    • pp.35-39
    • /
    • 2008
  • By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

  • PDF

RF 스퍼터링에 의해 MgO/Si 기판위에 증착된 Pb(Zr, Ti)$\textrm{O}_3$ 강유전체 박막의 특성연구 (Properties of Pb(Zr, Ti)$\textrm{O}_3$ Ferroelectric Thin Films on MgO/Si Substrate by RF Sputtering)

  • 장호정;서광종;장지근
    • 한국재료학회지
    • /
    • 제8권12호
    • /
    • pp.1170-1175
    • /
    • 1998
  • 하부전극 없이 MgO 중간층을 갖는 고농도로 도핑된 Si(100) 기판(MgO/Si)위에 고주파 마그네트론 스퍼터링 방법으로 as-deposited PZT 박막을 증착한후 $650^{\circ}C$ 온도에서 RTA 후속열처리를 실시하였다. 제작된 PZT 박막시료에 대해 MgO 중간층의 두께 및 후속열처리에 따른 결정학적, 전기적특성을 조사하였다. XRD 분석결과 MgO층이 전혀 증착되지 않은 bare Si 기판위에 증착된 PZT 시료는 pyrochlore 결정상만이 나타났으나 50 두께의 M gO층 위에 증착된 PZT/MgO/Si 박막시료는 전형적인 perovskite 결정구조를 나타내었다. SEM 및 AES 분석결과 PZT 박막두게는 약 7000 이었으며 비교적 매끄러운 계면형상을 보여 주었다. PZT 박막내의 각 성분원소가 깊이에 따라 비교적 균일한 분포를 나타내었다. $650^{\circ}C$의 온도로 후속열처리된 PZT/MgO/Si 박막의 1KHz 주파수에서 유전상수 ($\varepsilon_{r}$ )와 잔류분극 (2Pr)은 약 300 및 $14\mu$C/$\textrm{cm}^2$의 값을 각각 나타내었으며 누설전류의 크기는 약 $3.2\mu$A/$\textrm{cm}^2$이었다.

  • PDF

$Eu^{3+}$가 첨가된 광변환 유리의 특성과 효과연구 1(유리의 제조와 특성) (Characteristics of Photo-conversion Glass with $Eu^{3+}$ and Its Use 1 (Glass Production and Photo-conversion Characteristics))

  • 정헌생;안양규;길대섭
    • 한국태양에너지학회 논문집
    • /
    • 제22권4호
    • /
    • pp.44-50
    • /
    • 2002
  • Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.