• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1035-1041
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• 2001

The refining process and solubility of Ti in Al matrix during mechanical alloying (MA) were investigated by using X-ray diffraction (XRD), transmission electron microscopy (TEM) as functions of alloy composition, milling time and ball to powder ratio (BPR). Mechanical alloyed samples were annealed for investigating their stability and the formation behavior of$Al_3Ti$in the temperature range from$200{\circ}C$to$600{\circ}C$. It is observed from present experimental that disappearance of Ti peaks in mechanically alloyed Al-10wt%Ti is not simply attributable to the dissolution of Ti into Al, but associated mainly with extreme refining and/or heavy straining of Ti particles The annealing of the mechanically alloyed Al-Ti powders show differences in aluminide formation behavior when Ti content in Al is equal to or less than l0wt% and higher than l5wt%Ti. When Ti-content in Al is equal to or less than l0wt%, the MA powders transform directly to a global equilibrium state forming $DO_{22}- type\;Al_3$Ti above$400{\circ}C$. In the Al-Ti samples with equal to or higher than l5wt%Ti, transitional phases of cubic$Al_3Ti$and tetragonal $Al_{24}Ti_8$ are formed above$400{\circ}C$. They are stable only below$500{\circ}C$, and, $DO_{22}-type\;Al_3Ti$ becomes dominant aluminide at temperature higher than$ 600{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.16-16
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• 1991

Generally brittle eta phase produced during TiC deposition has a effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η), phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase)have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as follows; 1. by inserting underlayer eta phase were decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest grain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• Journal of the Korean institute of surface engineering
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• v.25 no.1
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• pp.16-23
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• 1992

Generally brittle eta phase produced during TiC deposition has a bad effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η) phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase) have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as fellows; 1. by inserting underlayer eta phase was decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest gain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.168-174
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• 1991

Ti-silicide was deposited by sputtering the composite target($TiSi_{2.6}$) on single-Si wafers and oxide on them. The heat treatment temperatures by rapid thermal annealing(RTA) have been varied in the range of $600-850^{\circ}C$ for 20seconds. It was not until RTA temperature was $800^{\circ}C$ that a stable $TiSi_2$ was formed, and the value of resistivity of that phase was $27~29{\mu}{\Omega}-cm$, which seems a little higher than that formed by the reactive method. The result of x-ray diffraction peals showed that till $750^{\circ}C$, C49 $TiSi_2$ phase was dominant, but at $800^{\circ}C$, at last, the phase was transformed into a stable C54 $TiSi_2$ phase. And, the result of x-ray photoeletron spectroscopy(XPS) measurements showed that the composition ratio of Ti and Si was 2 1 in the case of specimens treated at $800^{\circ}C$, The surface roughness of $TiSi_2$, which was condidered a weak point, was improved to a superior value of $17{\pm}1nm$, therefore increasing the possibility of applying $TiSi_2$ to semiconductor devices.

• Journal of Powder Materials
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• v.21 no.5
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• pp.382-388
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• 2014

Fe-TiC composite powder was fabricated by high-energy milling of powder mixture of (Fe, TiC) and (FeO, $TiH_2$, C) as starting materials, respectively. The latter one was heat-treated for reaction synthesis of TiC phase after milling. Both powders were spark-plasma sintered at various temperatures of $680-1070^{\circ}C$ for 10 min. with sintering pressure of 70 MPa and the heating rate of $50^{\circ}C/min$. under vacuum of 0.133 Pa. Density and hardness of the sintered compact was investigated. Fe-TiC composite fabricated from (FeO, $TiH_2$, C) as starting materials showed better sintered properties. It seems to be resulted from ultra-fine TiC particle size and its uniform distribution in Fe-matrix compared to the simply mixed (Fe, TiC) powder.

• Journal of Powder Materials
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• v.1 no.1
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• pp.15-20
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• 1994

The effect of SiC addition on sintering behaviors and microstructures of TiB2 ceramics were studied. The sintering of TiB2 was limited due to the surface diffusion and rapid grain growth at high temperature. However the addition of SiC to TiB2 ceramics improved the densification to above 99% of the theoretical density. The sintering of TiB2-SiC composite starts at 120$0^{\circ}C$ with the melting of the oxides in particle surface as impurities. After the reduction of the oxide by additional cabon at above 140$0^{\circ}C$, the grain boundary diffusion through the interface of TiB2-SiC play an important role. TEM observation showed neither chemical reactions nor other phases formed at the TiB2-SiC interfaces but the microcracks were observed due to the mismatch of thermal expansion between TiB2-SiC.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.820-828
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• 1995

Ti-sillcides are formed on an atomically clean Si substrate and its phase transition and surface and interface morphologies are examined depending on the Ti-film thicknesses, deposition temperatures and Si substrate orientations. Ti film thicknesses of 400$\AA$ and 200$\AA$ have been deposited at elevated temperatures from 50$0^{\circ}C$ to 90$0^{\circ}C$ with increments of 10$0^{\circ}C$ on Si(100) and Si(111) Ti-silicides are formed and analyzed with using XRD, SEM, and TEM to verify the phase transition and the surface and interface morphologies. The phase transition from C49 to C54 is observed to occur around $650^{\circ}C$ and examined to show some retardation depending on the substrate orientation and film thickness. This retardation of phase transition is explained by the consideration based on the surface and volume free energies. A rough surface of C49 TiSi$_2$is exhibited because of characteristics of nonuniform diffusion across the interface while the smooth surface and island formation of C54 TiSi$_2$is examined.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.231-238
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• 1998

Cr3C2 -dispersed TiC composites were prepared via HPCS(high pressure-self combustion sintering) pro-cess using mixtures of Ti, Cr and a carbon source for the purpose of increasing the facture toughness and sinterability of TiC. In this study the microstructure and properties of the composites were investigated in terms of relation to the carbon source the particle size of Ti and the amount of Cr. It was found that car-bon black was the most effective carbon source among the various carbon sources tested and the reaction was more effective as the particle size of Ti decreased. Among the sintered composites of Ti-C-Cr system the one with 30wt% Cr showed the best physical properties with 0.5% in apparent porosity 98.8% in re-lative density 18.2 GPa in hardness and 4.46 MPa.m1/2 in fracture toughness. In addition it was observed that the lattice constant of TiC decreased gradually with increasing the amount of Cr.