• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.173-173
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.15-19
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• 2013

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powders, which were fabricated by melting/grinding method and dispersed with 0.5 vol% $TiO_2$ nanopowders, were hot-pressed in order to investigate the effects of $TiO_2$ dispersion on the thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. Excellent thermoelectric properties such as a maximum figure-of-merit of $2.93{\times}10^{-3}/K$ and a maximum dimensionless figure-of-merit of 1.02 were obtained for the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. With dispersion of 0.5 vol% $TiO_2$ nanopowders, the maximum figure-of-merit and the maximum dimensionless figure-of-merit decreased to $2.09{\times}10^{-3}/K$ and 0.68, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.250-254
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• 2023

In this study, Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ glasses with high transmittance in mid-infrared region and high refractive indices were successfully synthesized. The relationship between glass properties and glass composition was analyzed. In Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ glass system, as increasing TeO₂ concentration, the refractive index increases and the glass transition temperature decreases. In addition, as increasing BaO concentration, the refractive index increases without decrease of Abbe number. The IR-cut off wavelength shifted to the longer wavelength with increasing TeO₂ and BaO contents due to their large molecular weight. The glass transition temperature significantly decreases when BaO was replaced with Li₂O.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.160.1-160
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• 2002

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.376-383
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• 2005

We designed and fabricated integrated-optic tunable polarization controllers based on $LiNbO_3$ with the Ti-indiffused waveguide along the y-axis utilizing the electro-optic effect. The device consists of $TE↔TM$ mode converters and TE/TM phase shifters. We analyzed the operation principles of each device utilizing transfer matrices based on a Jones matrix and simulated shifting of the center wavelength by inducing voltage. We confirmed experimentally that the fabricated devices control the tunability of the center wavelength and the input SOP.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.32-37
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• 2002

Passive polarization mode splitters at λ= 1.55 ${\mu}{\textrm}{m}$ were designed and fabricated based on Ti:x-cut LiNbO$_3$ single-mode optical waveguide and two-mode interference theory. The splitting ratio with waveguide width 8 ${\mu}{\textrm}{m}$, branching angle 0.55$^{\circ}$ and interfering length 470 ${\mu}{\textrm}{m}$ showed 16.18 dB, 21.25 dB for TE and TM input polarization modes, respectively. Polarization cross-talk of -16.28 dB and -21.28 dB for TE and TM modes was achieved. Total insertion losses of 2.24 dB/cm (TE) and 2.41 dB/cm (TM) were also measured. The devices operated nearly wavelength independently over a range or 30 nm.