• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.53-56
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• 2004

The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Speleological Society of Korea
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• v.34 no.35
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• pp.32-42
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• 1993

The Paektu-san mountains are geographically situated in the Korea strait to the north of the main peninsula, coordinated between the longitudes of W(127$^{\circ}$15'~128$^{\circ}$00')and E(128$^{\circ}$15'~129$^{\circ}$00'), and between the latitudes of S(41$^{\circ}$15'~42$^{\circ}$00') and N(42$^{\circ}$10'~42$^{\circ}$40'). The volcanic group of the Paektu-san mountains can be devided into 2 main kinds of volcanos by the method investigation, The ashes are mainly made of tremolite, trachte, basalt and pumice, or, a little quartz, labradorite and volcanic glass. These sorts, ratios and forms of the rocks are respectively similar. The Haeven lake is surrounded by 19 peaks. The central volcanic cone is a secant cone in shape, with an altitude of the 1800m to 2749,2m (Chang-kun-bong), an average diameter of 10km, and a shape of an ellipse seen high from the plane. They say there were several eruptions in 1668, 1700 and 1702 A. D. The crystal structure of the rock sample collected at the cave of Mt. Paektu-san is monoclinic. The quantitative analysis of the rock samples in the cave is done by using XRF this time. The chemical compositions by XRF fundamamental parameter analysis is : SiO$_2$: 50.72Wt%, TiO = 2.422Wt%, $Al_2$O$_3$= 17.65Wt%, Fe$_2$O$_3$= 9.371Wt%, CaO = 8.711Wt%, MgO = 4.l19Wt%, MnO = 0.l15Wt%, $K_2$O = 1.369Wt%, Na$_2$O : 3.028Wt% and P$_2$O$_{5}$ = 0.365Wt%. The K-Ar age of the rock sample is also determined to be 0.16Ma. This paper describes some problems experienced in dating young volcanic rocks, and then discusses chemical compositions, X-ray fluorescence analyses and the age of the formation of a lava tunnel such as in Mt. Paektu-san.n.

• Journal of the Korean Society of Clothing and Textiles
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• v.44 no.6
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• pp.1154-1162
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• 2020

In this study, the soft textile actuator is produced for a smart wearable with the shape memory effects from linear shape memory alloys of Nickel and Titanium using the driving force through the fabrication process. The measurement model was designed to measure dynamic characteristics. The heating method, and memory shape of the linear shape memory alloy were set to measure the operating temperature. A shape memory alloy at 40.13℃, was used to heat the alloy with a power supply for the selective operation and rapid reaction speed. The required amount of current was obtained by calculating the amount of heat and (considering the prevention of overheating) set to 1.3 A. The fabrication process produced a soft textile actuator using a stitching technique for linear shape memory alloys at 0.5 mm intervals in the general fabric. The dynamic characteristics of linear shape memory alloys and actuators were measured and compared. For manufactured soft textile actuators, up to 0.8 N, twice the force of the single linear shape memory alloy, 0.38 N, and the response time was measured at 50 s.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.458-464
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• 2006

The Pd-Ni-Ag alloy composite membrane using modified porous stainless steel (PSS) as a substrate was prepared by a electroless plating technique. In this work, we have introduced the intermediate layer between Pd-based alloy and a metal substrate. As an intermediate layer, the mixtures of nickel powder and inorganic sol such as $SiO_{2}$ sol, $Al_{2}O_{3}$ sol, and $TiO_{2}$ sol were used. The intermediate layers were coated onto a PSS substrate according to various membrane preparation conditions and then $N_{2}$ fluxes through the membranes with different intermediate layers were measured. The surface morphology of the intermediate layer in the mixture of nickel powder and inorganic sol was analyzed using scanning electron microscope (SEM). Finally, the Pd-Ni-Ag alloy composite membrane using the support coated with the mixture of nickel powder and silica as an intermediate layer was fabricated and then the gas permeances for $H_{2}$ and $N_{2}$ through the Pd-based membrane were investigated. The selectivity of $H_2/N_2$ was infinite and the $H_{2}$ flux was $1.39{\times}10^{-2}mol/m^2{\cdot}s$ at the temperature of $500^{\circ}C$ and trans-membrane pressure difference of 1 bar.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.55-55
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• 2003

최근 높은 해상도의 평판 디스플레이 장치 특히 차세대 TFT-LCD를 개발하기 위해서는 건식식각공정의 개발이 필수 불가결하며 이는 플라즈마 공정장치의 대면적화가 가능해야 한다. 따라서 산업계는 이러한 제조 조건에 알맞는 대면적 플라즈마 반응기 개발을 추구하고 있다. 이를 위해서는 건식식각공정의 개발이 필수 불가결하며 이를 위해선 플라즈마 공정장 치의 대면적화가 가능해야 한다. 이러한 대면적 공정을 위해서는 낮은 공정압력, 고밀도, 높은 플라즈마 균일도가 요구된다. 또한 이러한 대면적 고밀도 플라즈마에의 적용을 위하여 새로운 유도결합형 플라즈마 소오스의 개발이 진행되고 있으며, 안정적인 300mm웨이퍼 공정을 위하여 여러 형태의 안테나가 연구되어지고 있다. 그러나 차세대 TFT-LCD에 적용 가 능하게끔 기존의 ICP 소오스를 직접적으로 대면적화 하는데 있어서는 안테나의 인덕턴스의 값이 키지며, 유전물질의 두께 증가 및 그에 따른 재료비의 상슴에 의해 그 한계점을 나타 내었다. 본 연구에서는 차세대 TFT-LCD 및 POP 대면적 공정에 적용 가능한 고밀도 플라즈마를 발생시키기 위해서 내장형 유도결합형 선형 안테나를 사용하였다. 내장형 유도결합형 선형 안테나가 가지고 있는 고유의 정전기적 결합효과를 최소화시키기 위해 직사각형모양의 플라즈마 챔버(830mm*1,020mm)에서 영구자석을 사용하였다. 영구자석을 사용하여 외부자 장을 인가하였을 때가, 그럴지 않은 때보다 RF 안테나에 걸리는 코일의 전압을 낮춰주었으며, 영구자석의 배열에 따라 코일의 인덕턴스의 값이 크게 변함을 알 수 있었다. 그리고, 최적화된 자장의 배열은 플라즈마의 이온밀도를 증가시켰으며, 플라즈마 균일도 또한 10% 이 내로 유지됨을 알 수 있었다. 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.X> 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로

• KOREAN JOURNAL OF CROP SCIENCE
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• v.38 no.4
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• pp.350-359
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• 1993

The effect of gibberellic acid ($GA_3) and abscisic acid (ABA) on KCl-enhanced proteolysis of senescing leaves of rice(Oryza sativa L. cv. Chilsung) was studied. Emphasis was given to their effects on KCI-enhanced efflux of amino acids and proteinase activity. When treated singly, $GA_3 affected leaf proteolysis little, while ABA increased proteolysis, the rate of amino acid efflux, and ribulose -1,5 -bisphosphate carboxylase / oxygenase (Rubisco)-degrading endoproteinase activity. An additive increase in all three parameters mentioned above was observed when leaves were treated with ABA and KCl. No such an additive effect was found when $GA_3 was treated with KCl. Both $GA_3 and ABA helped to alleviate the KCI-suppressed activity of Rubisco-degrading exoproteinases. The additive increase in proteolysis of rice leaves in the presence of both ABA and KCl could thus be ascribed to a further increase in the efflux of protein hydrolyzates and Rubisco-degrading endoproteinase activity. An increase in proteolysis was accompanied by a decrease in water absorption, and the combined treatment of ABA with KCl resulted in a further reduction of water absorption.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.120-125
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• 2007

The effect of $MnO_{2}$ as a sintering additive on the microstructures and the piezoelectric properties, especially mechanical quality factor, of 0.05 Pb$(Sb_{0.5}Nb_{0.5})O_{3}$-0.95 Pb$(Zr_{0.52}Ti_{0.48})O_{3}$ (PSN-PZT) piezoelectric ceramics was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the sample were examined using XRD and FE-SEM, respectively. A study on the influence of $MnO_{2}$ additives on the dielectric and piezoelectric properties showed that the $MnO_{2}$-added PSN-PZT system exhibited a high mechanical quality factor and well-situated piezoelectric properties. The optimized results of $d_{33}$ (319 pC/N), $k_{p}$ (55 %), and $Q_{m}$ (751.24) were obtained at 0.2 wt% $MnO_{2}$ added PSN-PZT piezoelectrics.