• Title/Summary/Keyword: Ti-S-N

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The Piezoelectric and Dielectric Properties of PZT-PMN Piezoelectric Ceramics (PZT-PMN 압전 세라믹의 압전 및 유전 특성)

  • Lee, J.S.;Lee, Y.H.;Chae, H.I.;Jeong, S.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1439-1441
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    • 2001
  • In this paper, the piezoelectric and dielectric properties as a function of x and r in $yPbZr_xTi_{1-x}O_3-(1-y)Pb(Mn_{1/3}Nb_{2/3})O_3$ piezoelectric ceramics is investigated. As a results, when y is 0.95 and x is 0.505, electromechanical coupling factor($k_p$), permittivity(${{\varepsilon}_{33}}^T/{\varepsilon}_0$), piezoelectric strain constant($d_{33}$) and mechanical quality factor($Q_m$) are 58[%], 1520, 272 [pC/N] and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation. when sintering temperature is 1150[$^{\circ}C$], grain size is about 2 [${\mu}m$]. As y decreases, piezoelectric and dielectric properties and curie temperature decreases, but mechanical quality factor and sintering temperature increases.

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Dielectric Properties of SBT capacitor with annealing temperatures (열처리 온도에 따른 Pt/SBT/Pt 캐패시터의 유전특성)

  • Cho, C.N.;Oh, Y.C.;Jhung, I.H.;Kim, J.S.;Shin, C.G.;Choi, W.S.;Kim, C.H.;Lee, J.U.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1546-1548
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    • 2001
  • The $Sr_{0.8}Bi_{2.4}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/ $SiO_2$/Si) using RF magnetron sputtering method. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The dielectric constant is 213 at annealing temperature of 750[$^{\circ}C$] and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8}A/cm^2$ at annealing temperature of 750[$^{\circ}C$].

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Characteristics of tools for improving the tool life and forged product on cold forging (냉간 단조용 금형 수명 및 단조품 품질 향상을 위한 금형 특성 연구)

  • Lee Y.S.;Kwon Y.N.;Kwon Y.C.;Lee J.H.;Choi S.T.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.125-126
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    • 2006
  • The characteristics of the tool system give many effects into the costs and qualities for the finished components. Therefore, a tool life is one of the important issues on cold forging industry. However, since variables related with tool life are many complicated, the studies for solution should be investigated by the systematic research approach. In this study, heat-treatment of tool material is investigated to improve the tool life. Deep cryogenic treatment of tool steel is very efficient to improve the wear resistance due to the fine carbide. And, it is investigated that the shape and dimension of tool give effect into both tool life and quality of forged product.

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The Piezoelectric and Dielectric Properties of PZT-PMN Ceramics (PZT-PMN 압전 세라믹의 압전 및 유전 특성)

  • Lee, J.S.;Lee, Y.H.;Hong, J.K.;Jeong, S.H.;Chai, H.I.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.131-134
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    • 2001
  • In this paper, the piezoelectric and dielectric properties as a function of x and a in $aPbZr_xTi_{1-x}O_3-(1-a)Pb(Mn_{1/3}Nb_{2/3})O_3$ + ywt%MgO is investigated. As a results, when a is 0.95 and x is 0.505, electromechanical coupling factor$(k_p)$, permittivity${\varepsilon}_33^T/{\varepsilon}_0$, piezoelectric strain constant$(d_{33})$ and mechanical quality factor$(Q_m)$ are 58 %, 1520, 272 pC/N and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation, when sintering temperature is $1150^{\circ}C$, grain size is about $2\;{\mu}m$. As a results added MgO dopant in the ternary piezoelectric ceramic, when MgO content is 0.1 wt%, $k_p$ increases to 63[%].

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Studies on the forming limits for optimization of the tool path in Dieless incremental sheet metal forming (무금형 점진 판재 성형에서 공구경로 최적화를 위한 성형한계에 관한 연구)

  • Lee S. J.;Kim M. C.;Lee Y. S.;Kwon Y. N.;Lee J. H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.05a
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    • pp.249-252
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    • 2005
  • Recently, as the industrial demand for small quantity batch production of sheet metal components, the application of dieless forming technology to production of these component rise with the advantages of the reduction in manufacturing cost and time. In dieless forming processes, the determination of moving path of tool plays an important role in producing successfully formed parts. In order to obtain the optimized moving path of tool avoiding forming failure, it is necessary to examine the forming limit of sheet material. Therefore, in this study, as the new criterion to evaluate the formability of sheet material in dieless forming processes FDD(feeding depth diagram) with respect to feeding depth and punch diameter is proposed. Thus, the FDD for the sheet materials of STS304 and Ti-grade2 were obtained from a series of FDT(feeding depth test). In addition the possibility of the application of FLD in judging forming severity in dieless forming processes was investigated by comparing the results of FE analyses based on FLD and experimental FDT.

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Preparation of Ferroelectric $\textrm{SrBi}_{2}\textrm{Ta}_{2}\textrm{O}_{9}$ Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition (플라즈마를 이용한 유기금속 화학증착법에 의한 강 유전체 $\textrm{SrBi}_{2}\textrm{Ta}_{2}\textrm{O}_{9}$ 박막의 제조)

  • Seong, Nak-Jin;Kim, Nam-Gyeong;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.7 no.2
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    • pp.107-113
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    • 1997
  • $SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

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A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

Sedimentary Environments and Heavy Metallic Pollution at Shihwa Lake (시화호의 퇴적환경과 중금속오염)

  • Hyun, Sang-Min;Chun, Jong-Hwa;Yi, Hi-Il
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.4 no.3
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    • pp.198-207
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    • 1999
  • Five core sediments acquired from the Lake Shihwa are analyzed for variations of sedimentary environment and heavy metal pollution after the Shihwa seawall construction. The depositional environment of the study area is divided into anoxic, oxic and mixed suboxic conditions based on the C/N ratio and C/S ratios of organic matters. Controlling factors for redox condition are the water depth and the difference in industrial effluents supply. Correlations among geochemical elements (Mn, U, Mo) show a distinctive difference and thus can be used as an indicator of redox condition. The content of Al, Ti are dependent on the sediment characteristics, and the contents of heavy metals (Cr, Ni, Cu, Zn, and Pb) indicate heavy metal pollution. The concentrations of heavy metals are higher near Shiswa-Banwol industrial complexies than the central part of Lake Shihwa. Especially, the accumulation of the heavy metal at the surface sediments near Shihwa-Banwol industrial complex are two to eight times higher than in the center of Lake Shihwa.

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Effect of Non-lattice Oxygen Concentration on Non-linear Interfacial Resistive Switching Characteristic in Ultra-thin HfO2 Films

  • Kim, Yeong-Jae;Kim, Jong-Gi;Mok, In-Su;Lee, Gyu-Min;Son, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.359-360
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    • 2013
  • The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

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Cyclic fatigue, bending resistance, and surface roughness of ProTaper Gold and EdgeEvolve files in canals with single- and double-curvature

  • Khalil, Wafaa A.;Natto, Zuhair S.
    • Restorative Dentistry and Endodontics
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    • v.44 no.2
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    • pp.19.1-19.9
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    • 2019
  • Objectives: The purpose of this study was to evaluate the cyclic fatigue, bending resistance, and surface roughness of EdgeEvolve (EdgeEndo) and ProTaper Gold (Dentsply Tulsa Dental Specialties) nickel-titanium (NiTi) rotary files. Materials and Methods: The instruments (n = 15/each) were tested for cyclic fatigue in single- ($60^{\circ}$ curvature, 5-mm radius) and double-curved (coronal curvature $60^{\circ}$, 5-mm radius, and apical curvature of $30^{\circ}$ and 2-mm radius) artificial canals. The number of cycles to fracture was calculated. The bending resistance of both files were tested using a universal testing machine where the files were bent until reach $45^{\circ}$. Scanning electron microscopy and x-ray energy-dispersive spectrometric analysis were used for imaging the fractured segments, while the atomic force microscope was used to quantify the surface roughness average (Ra). Results: EdgeEvolve files exhibited higher cyclic fatigue resistance than ProTaper Gold files in single- and double-curved canals (p < 0.05) and both files were more resistant to cyclic fatigue in single-curved canals than double-curved canals (p < 0.05). EdgeEvolve files exhibited significantly more flexibility than did ProTaper Gold files (p < 0.05). Both files had approximately similar Ni and Ti contents (p > 0.05). EdgeEvolve files showed significantly lower Ra values than ProTaper Gold files (p < 0.05). Conclusions: Within the limitation of this study, EdgeEvolve files exhibited significantly higher cyclic fatigue resistance than ProTaper Gold files in both single- and double-curved canals.