• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.823-829
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• 2004

In this paper, non-self-aligned SiGe HBTs with ${f}_\tau$ and${f}_max $above 50 GHz have been fabricated using an RPCVD(Reduced Pressure Chemical Vapor Deposition) system for wireless applications. In the proposed structure, in-situ boron doped selective epitaxial growth(BDSEG) and TiSi$_2$ were used for the base electrode to reduce base resistance and in-situ phosphorus doped polysilicon was used for the emitter electrode to reduce emitter resistance. SiGe base profiles and collector design methodology to increase ${f}_\tau$ and${f}_max $ are discussed in detail. Two SiGe HBTs with the collector-emitter breakdown voltages ${BV}_CEO$ of 3 V and 6 V were fabricated using SIC(selective ion-implanted collector) implantation. Fabricated SiGe HBTs have a current gain of 265 ∼ 285 and Early voltage of 102 ∼ 120 V, respectively. For the $1\times{8}_\mu{m}^2$ emitter, a SiGe HBT with ${BV}_CEO$= 6 V shows a cut-off frequency, ${f}_\tau$of 24.3 GHz and a maximum oscillation frequency, ${f}_max $of 47.6 GHz at $I_c$of 3.7 mA and$V_CE$ of 4 V. A SiGe HBT with ${BV}_CEO$ = 3 V shows ${f}_\tau$of 50.8 GHz and ${f}_max $ of 52.2 GHz at $I_c$ of 14.7 mA and $V_CE$ of 2 V.

• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.3
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• pp.284-288
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• 2005

Baker's yeast was disrupted in a 1.4-L stainless steel horizontal bead mill under a continuous recycle mode using 0.3 mm diameter zirconia beads as abrasive. A single pass in continuous mode bead mill operation liberates half of the maximally released protein. The maximum total protein release can only be achieved after passaging the cells 5 times through the disruption chamber. The degree of cell disruption was increased with the increase in feeding rate, but the total protein release was highest at the middle range of feeding rate (45 L/h). The total protein release was increased with an increase in biomass concentration from 10 to $50\%$(w/v). However, higher heat dissipation as a result of high viscosity of concentrated biomass led to the denaturation of labile protein such as glucose 6-phosphate dehydrogenase (G6PDH). As a result the highest specific activity of G6PDH was achieved at biomass concentration of $20\%$(ww/v). Generally, the degree of cell disruption and total protein released were increased with an increase in impeller tip speed, but the specific activity of G6PDH was decreased substantially at higher impeller tip speed (14 m/s). Both the degree of cell disruption and total protein release increased, as the bead loading increased from 75 to $85\% (v/v)$. Hence, in order to obtain a higher yield of labile protein such as G6PDH, the yeast cell should not be disrupted at biomass concentration and impeller tip speed higher than $20\%(w/v)$ and 10 m/s, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Journal of Powder Materials
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• v.30 no.2
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• pp.107-115
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• 2023

Li_1.3Al_0.3Ti_1.7(PO₄)₃(LATP) is considered a promising material for all-solid-state lithium batteries owing to its high moisture stability, wide potential window (~6 V), and relatively high ion conductivity (10^-3-10^-4 S/cm). Solid electrolytes based on LATP are manufactured via sintering, using LATP powder as the starting material. The properties of the starting materials depend on the synthesis conditions, which affect the microstructure and ionic conductivity of the solid electrolytes. In this study, we synthesize the LATP powder using sol-gel and co-precipitation methods and characterize the physical properties of powder, such as size, shape, and crystallinity. In addition, we have prepared a disc-shaped LATP solid electrolyte using LATP powder as the starting material. In addition, X-ray diffraction, scanning electron microscopy, and electrochemical impedance spectroscopic measurements are conducted to analyze the grain size, microstructures, and ion conduction properties. These results indicate that the synthesis conditions of the powder are a crucial factor in creating microstructures and affecting the conduction properties of lithium ions in solid electrolytes.

• Biotechnology and Bioprocess Engineering:BBE
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• v.11 no.5
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• pp.466-469
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• 2006

The bed stability of Streamline DEAE (p = 1.2 g/mL) in a 20mm (i.d.) glass expanded bed contactor, and its performance on the recovery of glucose 6-phosphate dehydrogenase (G6PDH) from unclarified yeast homogenate were investigated. A residence time distribution study showed that a stable expanded bed was achieved. The theoretical plate and Bodenstein numbers determined were 25 and 53, respectively. A recovery yield of 87% and purification factor of 4.1 were achieved in the operation using 5% (w/v) biomass concentration feedstock. The performance of the anion exchange EBAC was still considerable good at a biomass concentration as high as 15% (w/v).

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1861-1866
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• 2012

The new semiconducting copolymers with 4,4-dialkyl-$4H$-cyclopenta[2,1-$b$:3,4-$b^{\prime}$]dithiophene and 2,2-dimethyl-$2H$-benzimidazole units were synthesized. The fused aromatic rings, such as cyclopentadithiophene (CPDT) unit, can make the polymer backbone more rigid and coplanar, which induces long conjugation length, narrow band gap, and strong intermolecular ${\pi}-{\pi}$ interaction. The stacking ability was controlled through attaching of linear or branched alkyl side chains. The spectra of PEHCPDTMBI and PHCPDTMBI in the solid films show absorption bands with maximum peaks at 401, 759 and 407, 768 nm, and the absorption onsets at 925 and 954 nm, corresponding to band gaps of 1.34 and 1.30 eV, respectively. The devices comprising PHCPDTMBI with $TiO_X$ showed a $V_{OC}$ of 0.39 V, a $J_{SC}$ of 1.14 $mA/cm^2$, and a $FF$ of 0.34, giving a power conversion efficiency of 0.15%. The PHCPDTMBI with linear alkyl chain on CPDT shows good solubility in organic solvent with higher PCE value than that of PEHCPDTMBI.

• Advances in materials Research
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• v.1 no.4
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• pp.311-347
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• 2012

Infections are caused due to the infiltration of tissue or organ space by infectious bacterial agents, among which Staphylococcus aureus bacteria are clinically most relevant. While current treatment modalities are in general quite effective, several bacterial strains exhibit high resistance to them, leading to complications and additional surgeries, thereby increasing the patient morbidity rates. Titanium dioxide is a celebrated photoactive material and has been utilized extensively in antibacterial functions, making it a leading infection mitigating agent. In view of the property amelioration in materials via nanofication, free-standing titania nanofibers (pure and nominally doped) and nanocoatings (on Ti and Ti6Al4V implants) were fabricated and evaluated to assess their efficacy to mitigate the viability and growth of S. aureus upon brief (30 s) activation by a portable hand-held infrared laser. In order to gauge the effect of exposure and its correlation with the antibacterial activities, both isolated (only titania substrate) and simultaneous (substrate submerged in the bacterial suspension) activations were performed. The bactericidal efficacy of the IR-activated $TiO_2$ nanocoatings was also tested against E. coli biofilms. Toxicity study was conducted to assess any potential harm to the tissue cells in the presence of photoactivated materials. These investigations showed that the photoactivated titania nanofibers caused greater than 97% bacterial necrosis of S. aureus. In the case of titania-coated Ti-implant surrogates, the bactericidal efficacy exceeded 90% in the case of pre-activation and was 100% in the case of simultaneous-activation. In addition to their high bactericidal efficacy against S. aureus, the benignity of titania nanofibers and nanocoatings towards tissue cells during in-vivo exposure was also demonstrated, making them safe for use in implant devices.

• The Journal of Advanced Prosthodontics
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• v.7 no.3
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• pp.249-256
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• 2015

PURPOSE. The aim of this study was to evaluate the effects of atmospheric plasma (APL) versus conventional surface treatments on the adhesion of self-adhesive resin cement to Ti-6Al-4V alloy. MATERIALS AND METHODS. Sixty plates of machined titanium (Ti) discs were divided into five groups (n=12): 1) Untreated (CNT); 2) Sandblasted (SAB); 3) Tribochemically treated (ROC); 4) Tungsten CarbideBur (TCB); 5) APL treated (APL). SEM analysis and surface roughness (Ra) measurements were performed. Self-adhesive resin cement was bonded to the Ti surfaces and shear bond strength (SBS) tests, Ra and failure mode examinations were carried out. Data were analyzed by one-way analysis of variance and chi-squared test. RESULTS. The lowest SBS value was obtained with CNT and was significantly different from all other groups except for APL. The ROC showed the highest SBS and Ra values of all the groups. CONCLUSION. It was concluded that the effect of APL on SBS and Ra was not sufficient and it may not be a potential for promoting adhesion to titanium.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.