• Title/Summary/Keyword: Ti-6A1-4V

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Detection of Vibrio vulnificus in Fish Farm and Bactericidal Methods on this Bacteria (가두리 양식장의 Vibrio vulnificus 검출 및 제어 방법)

  • 성치남;송계민;이규호;양성렬
    • Korean Journal of Microbiology
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    • v.38 no.4
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    • pp.281-286
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    • 2002
  • Detection of Vibrio vulnificus in fish farm and searching for the bactericidal methods on this bacteria were studied. To detect this microorganism in sea water, mud, fish and mussels, selective isolation methods and detection of vvhA gene were used from January to October,2000. V. vulnificus was detected from May when the water temperature was over $17^{\circ}C$. From June to September, higher than $19^{\circ}C$, this bacteria could be isolated from most of the samples. Freezing and refrigerating did not inhibit the growth of V. vulnificus. Citric acid did not show the bactericidal effect, but more than 500 mg/l of EDTA did. With the aid of UV and photocatalyst, $TiO_{2}$ showed bactericidal effect after 15 minute treatment. Photocatalytic system consisted of glass bead coated with $TiO_{2}$ and UV illumination showed bactericidal effect on V. vulnificus at the turnover rate of 0.2/min.

Dielectric Properties of $BaTiO_3$ System Ceramics for Microwave Phased Shifter (위상 변위기용 $BaTiO_3$계 세라믹의 유전특성)

  • Lee, Sung-Gap;Park, Sang-Man;Park, In-Gil;Lim, Sung-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.79-82
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    • 2002
  • $(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.

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Effect of $Al^{3+}$ Dopant on the Electrochemical Characteristics Of Spinel-type $Li_{4}Ti_{5}O_{12}$ (스피넬형 $Li_{4}Ti_{5}O_{12}$ 음극물질의 $Al^{3+}$ 첨가에 의한 전기화학적 성능 변화)

  • Jeong, Choong-Hoon;Lee, Eui-Kyung;Bang, Jong-Min;Lee, Bong-Hee;Cho, Byung-Won;Na, Byung-Ki
    • Clean Technology
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    • v.14 no.3
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    • pp.171-175
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    • 2008
  • The effect of the addition of $Al^{3+}$ dopant on the electrochemical characteristics of $Li_{4}Ti_{5}O_{12}$ was investigated. $Li_{4}Ti_{5}O_{12}$ is known as a 2ero-strain material, and $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ has been manufactured by solid-state reaction with high energy ball milling (HEBM). The samples were heated at 800, 900 and $1000^{\circ}C$ in electric furnace. The structural and surface structures were measured by XRD (X-ray diffraction) and SEM (scanning electron microscopy). Cut-off voltage of charge/discharge cycles was $1.0{\sim}3.0 V$ to investigate reversible capacity, cycle stability and plateau voltage. The reversible capacity of $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ was 138 mAh/g.

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Nanocrystalline Antimony Oxide Films for Dye-Sensitized Solar Cell Applications

  • Kim, Ji-Hye;Jang, Ji-Yeon;Kim, Sung-Chul;Han, Chi-Hwan;Kim, Seung-Joo
    • Bulletin of the Korean Chemical Society
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    • v.33 no.4
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    • pp.1204-1208
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    • 2012
  • A new photoelectrode composed of $Sb_6O_{13}$ nanoparticles with the size of 20-30 nm has been prepared via thermolysis of a colloidal antimony pentoxide tetrahydrate ($Sb_2O_5{\cdot}4H_2O$) suspension. The $Sb_6O_{13}$ electrode showed good semiconducting properties applicable to dye-sensitized solar cells (DSSCs); the energy band gap was estimated to be $3.05{\pm}0.5$ eV and the position of conduction band edge was close to those of $TiO_2$ and ZnO. The DSSC assembled with the $Sb_6O_{13}$ photoelectrode and a conventional ruthenium-dye (N719) exhibited the overall photo-current conversion efficiency of 0.74% ($V_{oc}$ = 0.76 V, $J_{sc}=1.99\;mAcm{-2}$, fill factor = 0.49) under AM 1.5, $100\;mWcm^{-2}$ illumination.

A Study on the Electrode Characteristics of Hypo-Stoichiometric Zr-based Hydrogen Storage Alloys

  • Lee, Sang-Min;Kim, Seoung-Hoe;Lee, Jai-Young
    • Journal of Hydrogen and New Energy
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    • v.10 no.4
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    • pp.197-210
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    • 1999
  • The hydrogen storage performance and electrochemical properties of $Zr_{1-X}Ti_X(Mn_{0.2}V_{0.2}Ni_{0.6})_{1.8}$(X=0.0, 0.2, 0.4, 0.6) alloys are investigated. The relationship between discharge performance and alloy characteristics such as P-C-T characteristics and crystallographic parameters is also discussed. All of these alloys are found to have mainly a C14-type Laves phase structure by X-ray diffraction analysis. As the mole fraction of Ti in the alloy increases, the reversible hydrogen storage capacity decreases while the equilibrium hydrogen pressure of alloy increases. Furthermore, the discharge capacity shows a maxima behavior and the rate-capability is increased, but the cycling durability is rapidly degraded with increasing Ti content in the alloy. In order to analyze the above phenomena, the phase distribution, surface composition, and dissolution amount of alloy constituting elements are examined by S.E.M., A.E.S. and I.C.P. respectively. The decrease of secondary phase amount with increasing Ti content in the alloy explains that the micro-galvanic corrosion by multiphase formation is little related with the degradation of the alloys. The analysis of surface composition shows that the rapid degradation of Ti-substituted Zr base alloy electrode is due to the growth of oxygen penetration layer. After comparing the radii of atoms and ions in the electrolyte, it is clear that the electrode surface becomes more porous, and that is the source of growth of oxygen penetration layer while accelerating the dissolution of alloy constituting elements with increasing Ti content. Consequently, the rapid degradation (fast growth of the oxygen-penetrated layer) with increasing Ti substitution in Zr-based alloy is ascribed to the formation of porous surface oxide through which the oxygen atom and hydroxyl ion with relatively large radius can easily transport into the electrode surface.

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A study on the Color and Texture of Ti$_{x}$N Coating with Sputtering Condition (Suputtering 조건에 따른 Ti$_{x}$N Coating 층의 색상과 집합조직에 관한 연구)

  • 김학동;조성식
    • Journal of Surface Science and Engineering
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    • v.31 no.3
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    • pp.133-141
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    • 1998
  • Stainless is widely used for various purposes due to its good corrosion resistance. There has been much research to produce the color stainless steel by several methods. In this experiment, TixN films have been deposited on the SUS304 substrate by the DC magnetron sputtering system and the color and texture of the films as a function of coating conditions has been studies. The TixN films showed a (111) preferred orintation in bias-free conditions. The texture of coated later was changed from (111) to (200) to (2200 with a change of the bias from -1000V to -3000V. When the bias is low, coated elements have low energy. Therefore, the texturct (111) of low surface energy. The mobility of atoms was increased with the increase of the blas and texture was changed to the other plane. Non-etched specimens all exhibited strong (111) texture. This result shows that (111) is a loose plane and of non-etched specimens all exhibited. High growing velocity of (111) of especially was main texture of Non-etched specimens. Low working pressure($4\times10^{-3}$torr) was more effective than figh working pressure ($6\times10^{-3}$torr) for the gold color of $Ti_xN$ film. L and b were increased and a was decreased with the increase of bias voltage. Accordingly, We obtained the near gold color of $Ti_xN$ film(L;92, a;1~1.5 b:24~29.50. As a result of reflectance. And as the bias increased, the reflectance was proportional to the increasing bias voltage, but we took the top reflectance when the bias voltage was -200V.

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Dependence of Poling Field on Pyroelectric Property of $Pb_{0.9}La_{0.1}TiO_3$ Ceramics

  • D. J. You;B. S. Kang;Park, S. K.
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.291-295
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    • 2000
  • The pyroelectric property of $Pb_{0.9}La$_{0.1}TiO_3$ceramics in a range of 1.3-4.1$\mu\textrm{m}$, fabricated by conventional solid sintering, was investigated as a function of poling field. The pyroelectric of the 4.1$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics is higher than that of the 1.3$\mu\textrm{m}$ and 1.7$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics at a low poling field and the pyroelectric coefficient is 25nC/$\textrm{cm}^2$K at a 4kV/mm poling field in every grain size. In order to explain this phenomenon, the intrinsic and extrinsic effects in view of the definition of the pyroelectric coefficient are introduced. The intrinsic and extrinsic effects on the pyroelectric property were investigated by measuring the tetragonal ratio and the $I_{002}$ with temperature with high temperature X-ray diffractometer. The change of spontaneous polarization and the $90^{\circ}$domain wall motion with temperature in the 1.3$\mu\textrm{m}$ and 4.2$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics have no effects on the pyroelectric coefficient. In our study, it can be seen that the pyroelectric coefficient is related to the quantity of $180^{\circ}$domain switching after poling treatment.

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Structural and electrical properties of Ba(Sr,Ti)O3/K(Ta,Nb)O3 multilayer thin film for the application of electro-caloric devices

  • Kwon, Min-Su;Lee, Sung-Gap;Kim, Kyeong-Min;Choi, Seungkeun
    • Journal of Ceramic Processing Research
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    • v.20 no.6
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    • pp.603-608
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    • 2019
  • In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

The Formation of the Shallow Junction by RTD and Characteristic Analysis for $n^+$ -p Diode with Ti-silicide (고속 열 확산에 의한 얕은 접합 형성과 Ti-실리시이드화된 $n^+$ -p 다이오드 특성 분석)

  • 최동영;이성욱;주정규;강명구;윤석범;오환술
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.8
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    • pp.80-90
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    • 1994
  • The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

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Comparative Study on the Efficiency of the Gas Discharge Lasers - Limiting Efficiency of Metal Vapor Lasers - (기체방전 레이저의 효율에 관한 연구 -금속증기레이저의 한계효율-)

  • 이재경
    • Korean Journal of Optics and Photonics
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    • v.4 no.1
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    • pp.47-56
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    • 1993
  • Practical efficiencies of pulsed gas discharge lasers utilizing vaporized Au, Ba, Cu, Fe, Mn, Pb, TI atoms are numerically optimized for a discharge pulse of 30 ns rise time at 5 kHz pulse repetition rate. Calculated optimum operating temperatures are close to the values at which the vapor pressure of each atom is about 1 Torr and are in good agreement with experimental values reported elasewhere. The optimum charging voltage was about 4 kV for all atomic vapor lasers except the TI laser. The calculated maximum efficiencies that have been discussed for possible limiting efficiencies for each laser were considerably higher than the reported experimental values. Especially, they were as high as 6.8% for Mn laser and 15% for Ba laser that were comparable to the 8.5% of copper vapor laser, from which considerably higher efficiencies can be expected for these two lasers experimentally. But, the present calculation shows a very low efficiency of 0.058% and requires an exceptional operating condition for the TI laser.

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