• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.551-557
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• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of Korea Foundry Society
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• v.26 no.4
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• pp.184-190
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• 2006

Presence of inclusions in Ti castings imparts detrimental effects on the mechanical performance of castings. However, actual inclusions do not occur very frequently and they are difficult to locate. As a result, acquirement of specimens for mechanical tests and thus in-depth research of the adverse influence of inclusions are challenging. To address this problem, artificial inclusion seeding methodology is developed to emulate actual inclusions in Ti investment castings. Firstly, to validate that this new methodology does not result in inherent mechanical property degradation, Ti specimens with machined, backfilled and HIPed holes are produced and compared to control (unaltered), cast Ti material. Fatigue test results indicate that this 'machine-and-HIP methodology without seeding' does not result in any fundamental mechanical property alteration, which would bias ensuing comparative results. Secondly, based on this result, validation of the artificially seeded inclusions being equivalent to 'as cast' inclusions is performed by comparing their fatigue behaviors. Test specimens created by the novel artificial inclusion seeding methodology are equivalent to Ti casting specimens containing actual cast-in inclusions, and an adverse effect of inclusions in investment castings is confirmed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.537-541
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• 2003

The a-Si:H TFTs using ferroelectric of SrTiO$_3$, as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric is better than SiO$_2$, SiN. Ferroelectric increases ON-current, decreases threshold voltage of TFT and also breakdown characteristics. The a-Si:H deposited by PECVD shows absorption band peaks at wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / and 876 $cm^{-1}$ / according to FTIR measurement. Wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / are caused by stretching and rocking mode SiH1. The wavenumber of weaker band, 876 $cm^{-1}$ / is due to SiH$_2$ vibration mode. The a-SiN:H has optical bandgap of 2.61 eV, refractive index of 1.8 - 2.0 and resistivity of 10$^{11}$ - 10$^{15}$ aim respectively. Insulating characteristics of ferroelectric is excellent because dielectric constant of ferroelectric is about 60 - 100 and breakdown strength is over 1 MV/cm. TFT using ferroelectric has channel length of 8 - 20 $\mu$m and channel width of 80 - 200 $\mu$m. And it shows drain current of 3 $\mu$A at 20 gate voltages, Ion/Ioff ratio of 10$^{5}$ - 10$^{6}$ and Vth of 4 - 5 volts.

• The Korean Journal of Physiology
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• v.19 no.2
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• pp.101-111
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• 1985

Transient inward current (TI) was studied by the two micro-electrode voltage clamp technique in the sinoatrial node of the rabbit. The author confirmed that in $10^{-6}$ M ouabain TI was found in the SA node and investigated the effects of ions, $(Na^+,\;K^+,\;Ca^{2+})$, $\beta-agonist$ (isoprenaline), local anesthetics (quinidine, lidocaine) and Ca-blockers ($Co^{2+}$, verapamil, diltiazem) on the TI recorded during depolarizing voltage clamp pulses to -40 and -20 mV. The results obtained were as follows ; 1) $10^{-6}M$ ouabain increased the frequency of sinus action potential and decreased the amplitude, especially overshoot of action potential. TI was induced by the depolarizing voltage clamp Pulses and the magnitude of the slow inward current (isi) decreased and the time course was slowed by the same depolarizing pulses. 2) 30% $Na^{+}$ and 24mM $K^+$ decreased by $10^{-6}M$ ouabain and 6 mM $Ca^{2+}$ and $10^{-7}M$ isoprenaline increased TI, $i_{si}$ and current oscillations. 3) Quinidine $(5\times10^{-7}M)$ reduced TI and $i_{si}$ but lidocaine $(10^6\;-10^5M)$ didn't reduced or increase TI. Current oscillations increased and isi decreased by lidocaine. 4) Ca-blockers decreased the amplitude and the frequency of sinus action potential. TI and $i_{si}$ decreased significantly but were not abolished completely at the concentrations used in this experiment. Verapamil and diltiazem had inhibitory action on TI in $2\times10^{-7}M$ concentration and showed very slow recovery after wasting out with normal Tyrode solution.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.127-135
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• 1996

To increase the sensitivity and the selectivity of the sensors to TMA gas, the composition ratio and the growth conditions of the ZnO films are studied. Annealing of the ZnO films in the various time ranges and temperatures in the oxygen is carried out to enhance the stbility of the electrical resistance. Pt/Ti heater deposited on backside of the substrates in used to control the operating temperature of th esensor. The ZnO thin film sensors doped to 4.0 wt% $Al_{2}$O$_{3}$ 1.0wt.% TiO$_{2}$ and 0.2wt.% V$_{2}$O$_{5}$ exhibited a high sensitivity and an excellent selectivity for TMA gas. The sensors made with the thin films annealed at 700$^{\circ}$C for 60 minutes in the oxygen atmosphere had a good stability and linearity. The heater deposited in the ratio of 1 to 1 (Pt:Ti) had a good heating properties. The sensors fabricated using above conditions showed a good response to the actual gases of a mackerel at a step of deterioration after death.

• Korean Journal of Microbiology
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• v.38 no.4
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• pp.281-286
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• 2002

Detection of Vibrio vulnificus in fish farm and searching for the bactericidal methods on this bacteria were studied. To detect this microorganism in sea water, mud, fish and mussels, selective isolation methods and detection of vvhA gene were used from January to October,2000. V. vulnificus was detected from May when the water temperature was over $17^{\circ}C$. From June to September, higher than $19^{\circ}C$, this bacteria could be isolated from most of the samples. Freezing and refrigerating did not inhibit the growth of V. vulnificus. Citric acid did not show the bactericidal effect, but more than 500 mg/l of EDTA did. With the aid of UV and photocatalyst, $TiO_{2}$ showed bactericidal effect after 15 minute treatment. Photocatalytic system consisted of glass bead coated with $TiO_{2}$ and UV illumination showed bactericidal effect on V. vulnificus at the turnover rate of 0.2/min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.79-82
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.

• Clean Technology
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• v.14 no.3
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• pp.171-175
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• 2008

The effect of the addition of $Al^{3+}$ dopant on the electrochemical characteristics of $Li_{4}Ti_{5}O_{12}$ was investigated. $Li_{4}Ti_{5}O_{12}$ is known as a 2ero-strain material, and $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ has been manufactured by solid-state reaction with high energy ball milling (HEBM). The samples were heated at 800, 900 and $1000^{\circ}C$ in electric furnace. The structural and surface structures were measured by XRD (X-ray diffraction) and SEM (scanning electron microscopy). Cut-off voltage of charge/discharge cycles was $1.0{\sim}3.0 V$ to investigate reversible capacity, cycle stability and plateau voltage. The reversible capacity of $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ was 138 mAh/g.