• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.263-266
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• 2000

This paper is focused on the fabrication of reliable Al/$TiO_2-SiO_2$/Mo antifuse, which could operate at low voltage along with the improvement in on/off state properties. Mo metal as the bottom electrode had smooth surface and high melting point, and was being kept as-deposited $SiO_2$film stable. The breakdown voltage of TiO_2-SiO_2$ stacked antifuse was better than that of same-thickness (100 $\AA$) $SiO_2$antifuse because of Ti diffusion in $SiO_2$. The improving breakdown-voltage and on-resistance can be obtained as well as the influence of hillock in the bottom metal is reduced by using double insulator. Low on-resistance (65 $\Omega$) and low programming voltage (9.0 V) can be obtained in these antifuses with 250 $\AA$ double insulator.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.362-368
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• 2009

Ti scaffolds with a three-dimensional porous structure were successfully fabricated using powder metallurgy and modified rapid prototyping (RP) process. The fabricated Ti scaffolds showed a highly porous structure with interconnected pores. The porosity and pore size of the scaffolds were in the range of 66$\sim$72% and $300\sim400\;\mu$m, respectively. The sintering of the fabricated scaffolds under the vacuum caused the Ti particles to bond to each other. The strength of the scaffolds depended on the layering patterns. The compressive strength of the scaffolds ranged from 15 MPa to 52 MPa according to the scaffolds' architecture. The alkali treatment of the fabricated scaffolds in an aqueous NaOH solution was shown to be effective in improving the bioactivity. The surface of the alkali-treated Ti scaffolds had a nano-sized fibre-like structure. The modified surface showed a good apatite forming ability. The apatite was formed on the surface of the alkali treated Ti scaffolds within 1 day. The thickness of the apatite increased when the soaking time in a simulated body fluid (SBF) solution increased. It is expected that the surface modification of Ti scaffolds by alkali treatment could be effective in forming apatites in vivo and can subsequently enhance bone formation.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.845-853
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• 2018

To understand the effect of microstructural factors (i.e., the size of ${\alpha}$ phase, equiaxed vs bimodal structure) on high cycle fatigue (HCF) and fatigue crack propagation (FCP) behaviors of mill-annealed Ti-6Al-4V (Ti64) alloy, three specimens of EQ (equiaxed)-8 (8 indicates the size of ${\alpha}$ grain), BM (bimodal)-8, and BM-16 were studied. The uniaxial HCF and FCP tests were conducted at an R ratio of 0.1 under sinusoidal fatigue loading. The microstructural influence (i.e., EQ vs BM) was not significant on the tensile properties of mill-annealed Ti64 alloy, and showed an increase in tensile strength and elongation with decreasing gauge thickness from 50 mm to 1.3 mm. The microstructure, on the other hand, affected the resistance to HCF substantially. It was found that the EQ structure in mill-annealed Ti64 has better resistance to HCF than the BM structure, as a result of different crack initiation mechanism. Unlike HCF behavior, the effect of microstructural features on the FCP behavior of mill-annealed Ti64 was not significant. Among the three specimens, BM-16 specimen showed the highest near-threshold ΔK value, probably because it had the greatest slip reversibility with large ${\alpha}$ grains. The effect of microstructural factors on the HCF and FCP behaviors of mill-annealed Ti64 alloy are discussed based on fractographic and micrographic observations.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.114-120
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• 1997

Perovskite $BaTiO_3$ thin films on stainless steel substrate were prepared by using electrochemical reduction method in solution of $TiCl_4\;and\;Ba(N0_3)_2$. According to current density and electrolysis time. the morphology and thickness of film were varied. Ra/'Ti atomic ratio in $BaTiO_3$ film was controlled by Ha/Ti atomic ratio in solution. Although the excess $TiO_2{\cdot}nH_2O$ film was coated in initial stage of electrolysis. UiilTi atomic ratio in film was nearly constant in later stage. $BaTiO_3$ film precursor was obtained under the condition of $1OmA/cm^2$ current density and Smin electrolysis time. $BaTiO_2$ thin films with perovskite phase were formed 11,. the heat treatment above $500^{\circ}$.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.1
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• pp.59-66
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• 2005

[ $TiO_2$ ] was deposited by DC magnetron sputtering on glass surface under various sputtering parameters such as discharge power($0.6{\sim}5.2\;kW$, substrate temperature($R.T{\sim}350^{\circ}C$), Ar and $O_2$ flow ratio with $0{\sim}50\;sccm$($Ar+O_2$ 90 sccm) and about 1 mtorr of pressure. TiO-N thin film was prepared under same sputtering conditions for $TiO_2$ thin film except flow ratio($Ar+O_2+N_2$ 90 sccm). The sheet resistance of thin films deposited under these parameters was measured to analyze electronic characteristic and thin film's thickness(${\alpha}$-step), surface roughness(AFM) and formation construction(FE-SEM, XRD) were also measured to draw optimal sputtering parameters. In order to evaluate photo-activity of thin film($TiO_2$, TiO-N) made in optimal parameters for removal of pollutants, toluene among VOCs and Suncion Yellow among reactive dyes were chosen to probe organic compounds for photo-degradation. It was shown that the photo-catalytic thin films had a significant photo-activation for the chosen contaminants and especially TiO-N thin film showed maximum efficiency of 33% for toluene(5 ppm) removal in visible-light range.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.363-369
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• 2002

We have designed conductive transparent filters using a low-emissivity coating such as [dielectric|Ag|dielectric] for display applications. The design is the repetition of [$TiO_{2}$|Ti|Ag |$TiO_{2}$] to increase the transmittance in the visible and decrease the transmittance in the near IR. The conductive transparent filters are deposited by a radio frequency(RF) magnetron sputtering system. The optical, structural and electrical properties of the filters were investigated and the optical spectra are compared with simulated spectra. The thickness of the deposited Ag films is above 13 ㎚ to increase the conductivity and that of $TiO_{2}$ films is 24 ㎚ to increase the transmittance in the visible range. Ti blockers are employed to prevent the Ag films from being oxidized by an oxygen gas during the reactive sputtering process. Also, it is shown that the thicker Ti film is necessary as the period increases. Finally, a filter with repetition of the basic structure three times shows the better cut-off near infrared(NIR) and the sheet resistance as low as 2Ω/□ which is enough to shield an unnecessary electromagnetic waves for a display panel.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.181-188
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• 2008

A.C. impedance properties of HA/Ti compound layer coated Ti-30Ta-($3{\sim}15$)Nb alloys have been studied by electrochemical method. Ti-30Ta binary alloys contained 3, 7, 10 and 15 wt% Nb were manufactured by the vacuum furnace system. And then specimen was homogenized at $1000^{\circ}C$ for 24 hrs. The sample was cut and polished for corrosion test and coating. It was coated with HA/Ti compound layer by magnetron sputter. The non-coated and coated morphology of Ti alloy were analyzed by X-ray diffractometer (XRD), energy X-ray dispersive spectroscopy (EDX) and filed emission scanning electron microscope (FE-SEM). The corrosion behaviors were investigated using A.C. impedance test (PARSTAT 2273, USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Ti-30Ta-($3{\sim}15\;wt%$)Nb alloys showed the ${\alpha}+{\beta}$ phase, and $\beta$ phase peak was predominantly appeared in the case of increasingly Nb contents. The microstructures of Ti alloy were transformed from needle-like structure to equiaxed structure as Nb content increased. From the analysis of coating surface, HA/Ti composite surface uniformed coating layer with 750 nm thickness. The growth directions of film were (211), (112), (300) and (202) for HA/Ti composite coating on the surface after heat treatment at $550^{\circ}C$, whereas, the growth direction of film was (110) for Ti coating. The polarization resistance ($R_p$) of HA/Ti composite coated Ti-alloys were higher than those of the Ti and HA coated samples in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Especially, corrosion resistance of Ti-Ta-Nb system increased as Nb content increased.

• Journal of the Korean Chemical Society
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• v.41 no.5
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• pp.223-233
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• 1997

Ultra-thin $TiO_2$ films are grown on the Mo(100) surface using evaporated Ti metal under ambient $O_2$ pressure. The thickness of the $TiO_2$ film is controlled by the dosing rate of Ti metal over Mo(100) which is determined from the Auger signal changes with dosing time. 30 ML, 5 ML, and 1.6 ML thick films are prepared and used to determine the growth mechanism, the chemical composition, and the surface structure of the films. The growth mechanism of the $TiO_2$ film on Mo(100) is observed to follow the layer-by-layer growth mechanism. The chemical composition of the film is found to be that of bulk $TiO_2$. The surface plane of the film is (001), which facets irreversibly at 1200 K. The LEED pattern obtained from the film can be explained with the faceted surface with {011} planes reconstructed to $(2\sqrt2{\times}\sqrt2)R45^{\circ}$ with respect to the $TiO_2$ (001) surface. The film is somewhat thermally unstable when annealed to 1300 K. The film sputtered with $Ar^+$ ion is also studied by XPS.

• Progress in Superconductivity
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• v.5 no.1
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• pp.75-79
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• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.