• Title/Summary/Keyword: Ti thickness

Search Result 1,121, Processing Time 0.026 seconds

Effect of Processing Conditions on the Deep Drawability of Ti-6Al-4V Sheet at Warm Temperatures (Ti-6Al-4V판재의 온간 딥드로잉 성형성에 미치는 공정변수의 영향)

  • Shin, G.S.;Park, J.G.;Kim, J.H.;Kim, Y.S.;Park, Y.H.;Park, N.K.
    • Transactions of Materials Processing
    • /
    • v.24 no.1
    • /
    • pp.5-12
    • /
    • 2015
  • In the current study, fundamental deep drawing characteristics of Ti-6Al-4V alloy sheets were investigated to establish the effect of processing conditions on large size square deep drawn cups. To accomplish this study, FE-simulations (Abaqus) were performed to determine optimum blank size, friction coefficient, the gap between punch and die, etc. The simulated processing parameters were verified experimentally. Based on the FE-simulation results, deep drawing was performed with various blank holding loads and sample sizes. In order to improve the formability of Ti-6Al-4V sheet, various lubricant methods were evaluated. Tensile tests and thickness measurements were conducted on the formed sheets. Processing parameters including blank holding force, lubricants, and optimum blank size, were selected to achieve improved drawing quality. With the optimum processing condition, a $200mm{\times}200mm$ cup was deep drawn successfully.

Dielectric Properties of the $Pb(Zr_{0.52}Ti_{0.48})O_3$ Thin Film by Sol-Gel Method. (Sol-Gel 법으로 제조한 $Pb(Zr_{0.52}Ti_{0.48})O_3$ 박막의 유전 특성)

  • Chung, Jang-Ho;Lee, Young-Jun;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1454-1456
    • /
    • 1994
  • $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

  • PDF

Characteristics of Pt thin films on WC for glass lens molding (유리렌즈 성형용 초경합금의 Pt 박막의 특성에 관한 연구)

  • Park, Soon-Sub;Lee, Ki-Yung;Won, Jong-Ho
    • Journal of the Korean Society of Manufacturing Process Engineers
    • /
    • v.8 no.3
    • /
    • pp.62-67
    • /
    • 2009
  • Pt thin films on Cr or Ti interlayer were deposited onto a tungsten carbide(WC) substrate by the ion beam assisted DC magnetron sputtering. The various atomic percent of Cr and Ti underneath of the Pt films were prepared to examine the total thin film characteristics. The microstructure and surface analysis of the specimen were conducted by using the SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Pt thin film also were examined. The interlayer of pure Ti was formed with 40 nm thickness while that of pure Cr was done with 50 nm as standard reference. The growth rate of either Cr or Ti thin film was almost same under the same deposition conditions. The SEM images showed that anisotropic grain of Pt thin films consisting of dense columnar structures irrespectively grew from the different target compositions. The values of hardness and adhesion strength of Cr/Pt thin film coated on a WC substrate were higher than those of Ti/Pt thin film.

  • PDF

Effect of Cutting off Processing SCM415 on Surface Roughness and Thickness of Materials (SCM415의 절단가공이 표면조도와 재료 두께에 미치는 영향)

  • Kim, Jin-Su;Kang, Seong-Ki;Shin, Mi-Jung
    • Journal of the Korean Society of Manufacturing Process Engineers
    • /
    • v.12 no.2
    • /
    • pp.20-26
    • /
    • 2013
  • This study focused on how it affects the surface roughness of work piece in cutting SCM415 steel, widely used steel in industry, by TiCN and TiN tools. Following conclusion was drawn from several experiments. The surface roughness of heat treated workpiece was better than that of non heat-treated materials. Moreover, the roughness of surface roughness(Ra 0.25) on feeding rate of 0.05 was better when it was in wet process, rather than dry process. As the feeding rate increases, TiCN coating tool shows better roughness of surface than TiN tool. Also, in heated treatment, TiCN coating tool shows the least straightness dimension deviation at feeding rate of 0.05, 0.15mm/rev, and concave-like R shape appears by the feeding rate orders of 0.05, 0.15, 0.1, 0.125 and 0.075mm/rev.

Preparation and ferroelectric properties of the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film by Sol-Gel method (SoI-Gel법에 의한 $Pb(Zr_{0.52}Ti_{0.48})O_3$박막의 제조 및 강유전 특성)

  • 정장호;박인길;류기원;배선기;이영희
    • Electrical & Electronic Materials
    • /
    • v.8 no.5
    • /
    • pp.606-610
    • /
    • 1995
  • In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.

  • PDF

Degradation of gas-phase toluene by $TiO_2$ loaded on carbon fibers using Atomic Layer Deposition (ALD) under UV irradiation

  • Luo, Yuan;Kim, Myoung-Joo;Seo, Hyun-Ook;Kim, Kwang-Dae;Tai, Wei Sheng;Kim, Young-Dok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.349-349
    • /
    • 2010
  • $TiO_2$ thin films were prepared on C fibers, and photocatalytic activity of these films for removing gas-phase toluene was studied. $TiO_2$ films were deposited on C fiber with 0.5 A-per-cycle growth rate by Atomic Layer Deposition (ALD) using TTIP (titanium tetra-isopropoxide) and $H_2O$ as precursors. The catalysts were characterized by Brunauer-Emmett-Teller (BET) for surface area and Scanning Electron Microscope (SEM) for morphology, respectively. Moreover, the samples were further characterized by X-ray Photoelectron Spectroscopy (XPS). As a function of $TiO_2$ thickness, no significant change in the photocatalytic activity could be identified. Interestingly, the bare-carbon fiber showed an even higher photocatalytic activity than the $TiO_2$ thin films for removing toluene. Origin of the high photocatalytic activity of the bare C fiber is discussed.

  • PDF

Morphology Change of Nanotube and Micropore on the Ti-25Nb-xHf Alloys with Hf Contents after Anodization

  • Kim, Sung-Hwan;Ko, Yeong-Mo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2012.05a
    • /
    • pp.333-333
    • /
    • 2012
  • In this study, we investigated morphology of nanotube and micropore on the Ti-25Nb-xHf alloys with Hf contents after anodization. Ti-25Nb-xHf ternary alloys contained from (0~15) wt.% Hf contents were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1000^{\circ}C$ for 12h and then water quenching. The specimens were cut from ingots to 3mm thickness and first ground and polished using SiC paper (grades from 100 to 2000). 2steps anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. Micro-pore formation was performed in Ca+P mixed solution at 265V for 3min. After that, nanotube formation was in 1M $H_3PO_4$ electrolytes containing 0.8wt.% NaF solutionat 10V for 120min. Morphologies of micropore and nanotube depended on the Hf content in Ti-25Nb-xZr ternary system.

  • PDF

Annealing under low oxygen partial pressure for crystal growth of BaTiO$_3 $thin films prepared by coating-pyrolysis process (코딩-열분해법에 의해 제조한 BaTiO$_3 $ 박막의 결정 성장을 위한 낮은 산소 분압에서의 열처리)

  • Kim, Seung-Won
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.10 no.2
    • /
    • pp.111-115
    • /
    • 2000
  • $BaTIO_3$ thin films were prepared on (100) $BaTIO_3$ substrates by coating- pyrolysis process using metal-organic compounds of Ba and Ti. The amorphous films prefired at $450^{\circ}C$were crystallized above $700^{\circ}C$ under oxygen partial pressure of $2\times 10^{-4}$. The lattice parameters of the perpendicular axis for the $BaTIO_3$ thin films heat-treated below $800^{\circ}C$ were closer to a value of cubic $BaTIO_3$, whereas those above $800^{\circ}C$ were closer to a value of tetragonal BaTiG. The results of XRD P scan and pole-figure analyses indicated that BaTiO, thin films have an epitaxial relationship with the $SrTiO_3$ substrates. The $BaTIO_3$thin films annealed at$800^{\circ}C$ showed the surface with island-like grains about 0.4$mu \textrm{m}$ and the cross section of 0.8 $mu \textrm{m}$ thickness with granular grains.

  • PDF

Characterization of Pb(Zr0.2Ti0.8)O3 Thin Films Deposited at Various Temperatures on SrRuO3/SrTiO3 Substrates by Pulsed Laser Deposition (Pulsed Laser Deposition에 의해 SrRuO3/SrTiO3 기판위에 여러 가지 증착온도에서 증착된 Pb(Zr0.2Ti0.8)O3 박막의 특성)

  • Lee, Woo-Sung;Jung, Gwan-Ho;Kim, Do-Hun;Kim, Si-Won;Kim, Hyeong-Jun;Park, Jong-Ryong;Song, Young-Pil;Yoon, Hui-Kun;Lee, Sae-Min;Choi, In-Hyuk;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.9
    • /
    • pp.810-814
    • /
    • 2005
  • [ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

A Study on $TiO_2$ Thin Film by PLD for Buffer Layer between Mesoproso $TiO_2$ and FTO of Dye-sensitized Solar Cell (염료 감응형 태양전지에서 Mesoproso $TiO_2$/FTO 사이에 완충층으로써의 PLD로 증착한 $TiO_2$ 박막에 관한 연구)

  • Song, Sang-Woo;Kim, Sung-Su;Roh, Ji-Hyoung;Lee, Kyung-Ju;Moon, Byung-Moo;Kim, Hyun-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.11a
    • /
    • pp.424-424
    • /
    • 2008
  • Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

  • PDF