• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.340-348
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• 2017

$SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.

• Korean Journal of Optics and Photonics
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• v.20 no.2
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• pp.123-127
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• 2009

In order to improve the diffraction efficiency of the photopolymer, we prepared a $TiO_2$ added photopolymer and investigated the optical properties. Prepared photopolymer films are based on polyvinyl alcohol (PVA) as a polymer binder, acryl amide (AA) as a photo-polymerizable monomer, triethanolamine (TEOA) as an initiator, and eosin Y as a sensitizer at 532 nm. To prepare the photopolymer films with the uniform thickness, the constant amount (2.5 ml) of the photopolymer solution was dropped on the glass and spread using a spin coater. Then films were dried for 72 hrs in a darkroom ($20^{\circ}C$, 40% RH) prior to the optical measurement. Then, the diffraction efficiencies of both the photopolymer films containing $TiO_2$ and non-contained films were measured with the various incident angles ($20{\sim}70^{\circ}$). Therefore, $TiO_2$ added photopolymer showed 5% higher diffraction efficiency than neat photopolymer without $TiO_2$ addition. The addition of $TiO_2$ into the photopolymer showed the high diffraction efficiency (over 70%) at broad range ($20{\sim}70^{\circ}C$) of the incident angle.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.168-172
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• 1999

We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily boron doped $\textrm{p}^{+}$-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co($150\AA$)/Ti($50\AA$) films on the clean $\textrm{p}^{+}$-Si substrates in an E-beam evaporator and performing the two step RTA process (first annealing: 650$50^{\circ}C$/20sec, second annealing: $800^{\circ}C$/20sec) in a $N_2$ambient with the pressure of $\textrm{10}^{-1}$atm. Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about $18\mu\Omega$-cm and the uniform thickness of about $500\AA$ without change of sheet resistance and agglomeration under the long post0annealing time up to $1000^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.73-80
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• 1990

The formation of Ti-silicides with the type of substrate, the species and the concentration of dopant, and the annealing temperature was investigated with sheet resistance and thickness measurement, elemental depth profilling, and microstructure. It was directly affected by the type of substrate, the species and the concentration of dopant, and the annealing temperature. For the amorphous Si substrate, the smothness of $TiSi_2/Si$ interface was increased. Above concentr-ation of $1{\times}10^{16}ions/cm^2$, the rate of $TiSi_2/Si$ formation was decreased and the sheet resistance was increased. The initial profile of dopant according to the implantation energy was one of the factors influencing the out-diffusion of dopant. In $POCI_3$ process, this was less than in ion implantation process.

• International Journal of Ocean System Engineering
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• v.2 no.2
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• pp.106-115
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• 2012

In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.49-55
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• 2019

$Ti_{0.33}Al_{0.67}N/CrN$ nano-multilayers, which are known to have excellent wear resistance, were prepared using an unbalanced magnetron sputter to have various periods of 2-5 nm. $Ti_{0.33}Al_{0.67}N$ had a hexagonal structure in a single layer, but converted to a cubic structure by forming a multilayer with CrN, which has a cubic structure. Thus, $Ti_{0.33}Al_{0.67}N$ formed a superlattice in the multilayer. The $Ti_{0.33}Al_{0.67}/CrN$ multilayer with a period of 2.5 nm greatly exceeded the hardness of the $Ti_{0.33}Al_{0.67}N$ and the CrN single layer, reaching 39 GPa. According to the low angle X-ray diffraction results, the $Ti_{0.33}Al_{0.67}N/CrN$ multilayer maintained its as-coated structure to a temperature as high as $700^{\circ}C$ and exhibited hardness of 30 GPa. The thickness of the oxide layer of the $Ti_{0.33}Al_{0.67}N/CrN$ multilayered coating was less than one-tenth of those of the single layers. Thus, $Ti_{0.33}Al_{0.67}N/CrN$ multilayered coating had hardness and oxidation resistance far superior to those of its constituent single layers.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.17-33
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• 2022

Ti₃C₂T_X MXene, first reported by Naguib et al. in 2011, has attracted tremendous attention due to its excellent hydrophilicity, electrical conductivity, and mechanical/chemical stability. Since MXene is a two-dimensional material with a thickness of few nanometers, which ensure its flexibility. In last few years, due to these properties many researchers used Ti₃C₂T_X MXene into various fields such as flexible smart sensors, energy harvesting/storage devices, supercapacitors and electromagnetic interference shielding systems. In this review article, we have briefly discussed the various synthesis processes and characteristics of Ti₃C₂T_X MXene. Moreover, we reviewed the latest development of Ti₃C₂T_X MXene as flexible electrode material to be used into different applications.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.162-166
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• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.