• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Journal of Welding and Joining
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• v.13 no.1
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• pp.103-114
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• 1995

Plasma Transferred arc(PTA) hard facing process has been developed to obtain an overlay weld metal having excellent wear resistance. The effect of Ti, TiSi$_{2}$ and TiC powders addition on the surface of Aluminum alloy 5083 has been investigated with PTA process. This paper describes the result of test the performance of the overlay weld metal. The result can be summarized as follows 1. Intermetallic compound is formed on surface of base metal in Ti or TiSi$_{2}$ powder but the reaction with surface of base metal is little seen in TiC powder. 2. In formation of composite layer on aluminum alloy surface by plasma transferred arc welding process, high melting ceramics like TiC powder is excellent. 3. The multipass welding process is available for formation of high density of powder. But the more number of pass, the less effect of powder, it is considered, and limits of number of pass. 4. By increasing area fraction of TiC powder on Al alloy surface, in especially TiC powder the hardness increase more than 40% area fraction and 88% shows about Hv 700.

• Korean Journal of Materials Research
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• v.28 no.7
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• pp.405-410
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• 2018

TiN and CrN thin films are among the most used coatings in machine and tool steels. TiN and CrN are deposited by arc ion plating(AIP) method. The AIP method inhibits the reaction by depositing a hard, protective coating on the material surface. In this study, the characteristics of multi-layer(TiN/CrN/TiN(TCT), CrN/TiN/CrN(CTC)) are investigated. For comparison, TiN with the same thickness as the multilayer is formed as a single layer and analyzed. Thin films formed as multilayers are well stacked. The characteristics of micro hardness and corrosion resistance are better than those of single layer TiN. The TiN/CrN peak is confirmed because both TCT and CTC are formed of the same component(TiN, CrN), and the phase is first grown in the (111) direction, which is the growth direction. However, the adhesion and abrasion resistance of the multilayer films are somewhat lower.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.861-869
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• 1994

Chemical vapor deposition using titanium tetra isopropoxide(TTIP) was employed to investigate effects of process parameters on the uniformity of $TiO_{2}$this films deposited on Indium Tin Oxide (ITO)coated glass. Deposition experiments were carried out at temperatures ranging from $300^{\circ}C$ to $400^{\circ}C$ under the pressure of 0.5~2 torrin a cold wall reactor which can handle 200mm substrate. It was found that the growth rate of $TiO_{2}$was closely related to the reaction temperature and the ractant gas compositions. Apparent activation energy for the deposition rate was 62.7lkJ/mol in the absence of $O_{2}$ and 100.4kj/mol in the presence of $O_{2}$, respectively. Homogeneous reactions in the gas phase were promoted when the total pressure of the reactor was increased. Variance in the film thickness was less than a few percent, but at high deposition rates film thickness was less uniform. Effects of reaction temperature on $TiO_{2}$ thin film characteristic was investigated with SEM, XRD and AES.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1485-1486
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• 2011

A layer of $TiO_2$ thin film less than ~500nm in thickness, as a blocking layer, was coated by sol-gel method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte (I-/I3-). The effects of heat treatment conditions of the gel and as-coated film on the thickness and consolidation to substrate were studied. The flexible DSCs were fabricated with working electrode of Ti thin foil coated with blocking $TiO_2$ layer, dye-attached mesoporous $TiO_2$ film, gel electrolyte and counter electrode of Pt-deposited indium doped tin oxide/polyethylene naphthalate (ITO/PEN). The photo-current conversion efficiency of the cell was 5.3% ($V_{oc}=0.678V$, $J_{sc}=12.181mA/cm^2$, ff=0.634) under AM1.5, 100 mW/$cm^2$ illumination.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.161-161
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• 2013

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.662-662
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• 2013

Over the last several decades, innovative light-harvesting devices have evolved to achieve high efficiency in solar energy transfer. Research on the mechanisms for plasmon resonance is very desirable to overcome the conventional efficiency limits of photovoltaics. The influence of localized surface plasmon resonance on hot electron flow at a metal-semiconductor interface was observed with a Schottky diode composed of a thin silver layer on $TiO_2$. The photocurrent is generated by absorption of photons when electrons have enough energy to travel over the Schottky barrier and into the titanium oxide conduction band. The correlation between the hot electrons and the surface plasmon is confirmed by matching the range of peaks between the incident photons to current conversion efficiency (IPCE, flux of collected electrons per flux of incident photons) and UV-Vis spectra. The photocurrent measured on Ag/$TiO_2$ exhibited surface plasmon peaks; whereas, in contrast to the Au/$TiO_2$, a continuous Au thin film doesn't exhibit surface plasmon peaks. We modified the thickness and morphology of a continuous Ag layer by electron beam evaporation deposition and heating under gas conditions and found that the morphological change and thickness of the Ag film are key factors in controlling the peak position of light absorption.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.3
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• pp.705-712
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• 1995

The wear characteristics and wear mechanisms in TiN coating deposited on high speed steel and alloy tool steel by ion plating were investigated. Pin on V-block wear tester was used for a wear test method. The specimen was composed of three kinds of high speed steel and alloy tool steel which had different hardness by changing the heat treating condition. Three kinds of coating thickness were also applied to each specimen. Microscopic observation of worn surfaces was made by SEM. The scratch test of coating surface by the ion plating showed that critical load to break the coating interface was greater than 50N. The critical load increased with both substrate hardness and coating thickness. The wear resistance of TiN coated high speed steel became 10 times greater than that of non-coated ones. SEM observation showed that leading edge of contact was compressive and trailing edge was under maximum tensile stress and then surface cracking broke out perpendicular to sliding direction.

• KSTLE International Journal
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• v.10 no.1_2
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• pp.33-36
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• 2009

The nuclear steam generator is composed of a bundle of tubes. The length of these tubes is very long, but their diameter is small. Fluid exists inside of the steam generator and its flow causes vibration, therefore these tubes are supported by anti-vibration bars. The wear damage due to the vibration is known as fretting wear, which should be minimized to ensure the safety of the plants. Research needs to be done about decreasing the amount of fretting wear. Hard coatings have proven to be very effective in reducing the amount of wear. The commercial coatings of TiN and CrN have excellent wear resistance and are used to protect the Inconel tube from fretting wear. The tube-on-flat type tester was used for conducting the fretting wear tests. It was found that the wear amounts of the coated tubes decreased depending on the coating thickness. CrN was found to be very effective in reducing the wear, while the wear amounts were dependent on the coating thickness in the case of TiN and a thick coating of TiN was very effective on wear resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.