• 한국전기전자재료학회논문지
• /
• 제27권2호
• /
• pp.115-120
• /
• 2014

Photo electrode is an important component for DSSC. DSSCs electrical characteristics and efficiencies fabricated with different $TiO_2$ photo electrodes thickness and modified phoro electrode surface area were studied. $11{\mu}m$ $TiO_2$ photo electrode shows a 4.956% efficiency. The highest short circuit current density was a $9.949mA/cm^2$. Efficiencies and short circuit current density increased as tape casting thickness decreased. Modified surface area of the photo electrode by needle stamp processing were studied. 200 times needle stamp processing on photo electrodes shows a highest 5.168% efficiency. Also the short circuit current density was a $10.261mA/cm^2$.

• The Korean Journal of Ceramics
• /
• 제2권2호
• /
• pp.95-101
• /
• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• 대한금속재료학회지
• /
• 제49권5호
• /
• pp.367-373
• /
• 2011

This paper studies the experimental method that uses the homogeneous precipitation method to prepare mica flakes coated with anatase-type titania pearlescent pigment with urea as precipitant. The optimum technology parameters, the chemical composition, the microstructure, and the color property of resulting pigments are discussed. The coating principle of mica coated titania with various coating thickness is analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy(TEM) and tested by spectrophotometer analysis. The colored nanocrystalline pigments with different morphology and coating thickness 45-170 nm were prepared by homogeneous precipitation treatment of $TiOSO_4$(titanum oxysulfate) aqueous solutions. Characterizations on the pigments show that the pearlescent effects of the pigments depend mainly on mica size, thickness of the metal oxide deposit, its chemical composition, and crystal structure.

• 대한의용생체공학회:의공학회지
• /
• 제19권3호
• /
• pp.225-232
• /
• 1998

무정형 실리콘을 기반으로 한 X-선 영상기기에 대한 Monte Carlo 시뮬레이션 결과를 기술하였다. 무정형 실리콘 X-선 영상기기의 특성을 조사하고 최적의 설계변수들을 제공하기 위하여 Monte Carlo 시뮬레이션을 수행하였다. 본 연구의 목적에 맞도록 Monte Carlo simulation codes를 개발하였고, X-선 최대전압, 알루미늄 필터 두께, Cal(T1)두께, 그리고 무정형 실리콘 광다이오우드 픽셀 크기들을 변화시키면서 무정형 실리콘 X-선 영상기기의 계측 효율과 해상도의 변화를 연구하였다. 60kVP-120kVp의 X-선에 대하여, CsI(TI)의 두께가 300um-500um일 때 계측효율은 70%-95% 였고 에너지 흡수효율은 40%-70%였다. 시뮬레이션 결과로부터, 무정형 실리콘 픽셀크기와 Csl(TI) 두께가 해상도를 결정하는 가장 주된 요소임이 밝혀졌다. 본 연구에서 개발한 시뮬레이션을 사용하여 감도와 해상도를 최적화할 수 있는 적절한 픽셀 크기와 CsI(TI) 두께를 찾아낼 수 있었다.

• 한국세라믹학회지
• /
• 제51권4호
• /
• pp.362-366
• /
• 2014

Dye-sensitized solar cells (DSSCs) were synthesized using a $0.25cm^2$ area of a $TiO_2$ nanoparticle layer as the electrode and platinum (Pt) as the counter electrode. The $TiO_2$ nanoparticle layers (12 to 22 ${\mu}m$) were screen-printed on fluorine-doped tin oxide glass. Glancing angle X-ray diffraction results indicated that the $TiO_2$ layer is composed of pure anatase with no traces of rutile $TiO_2$. The Pt counter electrode and the ruthenium dye anchored $TiO_2$ electrode were then assembled. The best photovoltaic performance of DSSC, which consists of a $18{\mu}m$ thick $TiO_2$ nanoparticle layer, was observed at a short circuit current density ($J_{sc}$) of $14.68mA{\cdot}cm^{-2}$, an open circuit voltage ($V_{oc}$) of 0.72V, a fill factor (FF) of 63.0%, and an energy conversion efficiency (${\eta}$) of 6.65%. It can be concluded that the electrode thickness is attributed to the energy conversion efficiency of DSSCs.

• 한국재료학회지
• /
• 제4권2호
• /
• pp.143-151
• /
• 1994

$(PbZr_{52},Ti_{48})O_{3}$인 composite ceramic target을 사용하여 R. F. 마그네트론 스퍼터링 방법으로 기판온도 $300^{\circ}C$에서 Pt/Ti/Si 기판위에 PZT 박막을 증착하였다. 페롭스 카이트 PZT박막을 얻기 위하여 PbO분위기에서 로열처리를 행하였다. 하부전극으로 Pt를 사용하였으며 Pt(205$\AA$)/Ti(500 $\AA$)/Si 및 Pt(1000$\AA$)/Ti(500$\AA$)/Si기판을 준비하여 Pt두께화 Ti층이 산소의sink로 작용함으로서 이를 가속화하였다. Ti층의 상부는 산소의 확산으로 인하여 TiOx층으로 변태하였고 하부는 in diffused Pt와 함께 실리사이드층을 형성하였다. TiOx 층의 형성은PZT층의 방향성에 영향을 주었다. 유전상수 (10kHz), 누설전류, 파괴전압, 잔류분극 및 항전계는 각각 571, 32,65$\mu A /\textrm{cm}^2$, 0.40MV/cm, 3.3$\mu C /\textrm{cm}^2$, 0.15MV/cm이었다.

• 한국세라믹학회지
• /
• 제37권6호
• /
• pp.530-536
• /
• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

• 한국분말재료학회지
• /
• 제25권1호
• /
• pp.48-53
• /
• 2018

One-dimensional rutile $TiO_2$ is an important inorganic compound with applicability in sensors, solar cells, and Li-based batteries. However, conventional synthesis methods for $TiO_2$ nanowires are complicated and entail risks of environmental contamination. In this work, we report the growth of $TiO_2$ nanowires on a Ti alloy powder (Ti-6wt%Al-4wt%V, Ti64) using simple thermal oxidation under a limited supply of $O_2$. The optimum condition for $TiO_2$ nanowire synthesis is studied for variables including temperature, time, and pressure. $TiO_2$ nanowires of ${\sim}5{\mu}m$ in length and 100 nm in thickness are richly synthesized under the optimum condition with single-crystalline rutile phases. The formation of $TiO_2$ nanowires is greatly influenced by synthesis temperature and pressure. The synthesized $TiO_2$ nanowires are characterized using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HR-TEM).

• 한국세라믹학회지
• /
• 제45권12호
• /
• pp.839-844
• /
• 2008

$TiO_2$ is an environment-friendly semiconducting material, and it has photocatalytic and hydrophilic effect. There are a lot of reports on the photocatalytic characteristics of $TiO_2$, such as organic pollutants resolving, anti-bacterial, and self-purification material. In this paper, $TiO_2$ micron-sized powders were deposited on the glass by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $TiO_2$ photocatalytic thin films were fabricated. The thickness of the films were controlled by changing the number of deposition cycle. Morphologies and characteristics of the AD-$TiO_2$ thin films were examined by SEM, TEM, XRD, and UV-Visible Spectrophotometer. As the thickness of $TiO_2$ films increased, surface roughness increased. By this increment, the reaction area between film and pollutant was enlarged, resulting in better photocatalytic property.

• 한국재료학회지
• /
• 제8권5호
• /
• pp.377-382
• /
• 1998

Ti[N ($C_{2}$$H_{5}$ $CH_{3}$)$_{2}$]$_{4}$ [tetrakis(ethylmethylammino)titanium.TEMAT]와 $NH_{3}$를 반응가스로 하여 각각 펄스(pulse) 형태로 시분할 주입되는 새로운 박막 증착방법(이하 Cycle-CVD라 함)을 이용하여 TiN박막이 $SiO_2$.기판위에 증착되었다.Cycle-CVD에서 반을로 내로 주입되는 반응가스와 Ar가스는 TEAM 펄스, Ar 펄스,$NH_{3}$펄스, Ar 펄스의 순서로 시분할주입되었고, 이렇게 차례대로 주입되는 4개의 펄스를 하나의 cycle로 규정하고, Cycle-CVD는 이러한 cycle이 연속하여 반복적으로 주입되도록 설계되었다. 기판온도가 $170^{\circ}C$-$210^{\circ}C$에서는 atomic layer deposition(ALD)특성을 보였고, $200^{\circ}C$에서 충분한 반응가스의 펄스시간 후에 cycle당 증착된 박막의 두께가 0.6nm/cycle로 포화되는 양상을 보여주었는데, 이는 cycle당 증착된 TiN 박막의 두께가 1.6 monolayer(ML)/cycle에 해당된다. 이와 같이 반등가스의 흡착을 이용ㅇ하여 TiN이 제한된 표면반응만에 의하여 ALD 기구에 의해 증착이 이루어지므로 TiN 박막의 두께는 단지 cycle 횟수만으로 정확하게 제어할 수 있었고, 우수한 step coverage 특성을 얻었다. 또한 반응가스간의 기상반응을 방지함으로써 입자의 발생을 억제할 수 있었고, 상대적으로 낮은 온도임에도 불구하고 4at% 이하의 낮은 탄소함량을 갖는 양호한 특성을 보여주었다.