• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.147-148
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• 2007

Dye-sensitized solar cell using conversion of solar energy to electrical energy appeared that which solves a environmental matter. The dye-sensitized solar cell uses nano-crystalline oxide semiconductor for absorbing dye. The $TiO_2$ is used most plentifully. The efficiency of the dye-sensitized solar cell changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. In this paper, we report The effect of titania$(TiO_2)$ thickness on the performance of dye-sensitized solar cells. Using doctor blade method, It produced the thickness of the $TiO_2$ with $7\;{\mu}m,\;10\;{\mu}m,\;13\;{\mu}m$. The efficiency was the best from $10{\mu}m$. It had relatively low efficiency on the thickness from $7\;{\mu}m\;to\;13\;{\mu}m$. The reason why it presents low efficiency on $7\;{\mu}m$ thickness is that excited electrons can not be delivered enough due to thin thickness of $7\;{\mu}m\;TiO_2$. And The reason why it presents low efficiency on $13\;{\mu}m$ thickness is that thick $13\;{\mu}m\;TiO_2$ can not penetrate the sunlight enough.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1852-1858
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• 1990

The sheet resistance and thickness of Ti-Silicides treated RTA at 600, 700, 800\ulcorner was measured with amount of BF2 implanted in Si substrate. And the profile of BF2 was studied by SIMS. The formation of TiSi2 starts at 700\ulcorner. The Ti-Silicides almost consist of TiSi2 and have a low resistivity about 16列 cm at 800\ulcorner. The sheet resistances of Ti-silicides increase and thicknesses of it decrease with increasing dose of BF2. Considering the results of SIMS and the thickness of native oxide, the decrease of thickness of Silicides chiefly results from the increase of native oxide thickness with increasing dopants.

• Journal of the Korean institute of surface engineering
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• v.51 no.3
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• pp.157-163
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• 2018

The anodic $TiO_2$ layers which are prepared in various anodization conditions exhibit their specific color depending on the thickness of $TiO_2$. In this study, the relationship between the color of $TiO_2$ layer, which is grown by PEO (Plasma electrolytic oxidation), and the thickness of the $TiO_2$ layer is investigated. To evaluate the color change of the $TiO_2$ layer, the value of color ($dE^*ab$) is measured and calculated by spectrophotometer and chromameter. As a result, it is found that $dE^*ab$ values and thickness of $TiO_2$ layers form a linear relationship with meaningful formular. This formula can be helpful to quantify the thickness of the $TiO_2$ layer by the numerical $dE^*ab$ values. In this process, the spectrophotometer shows more precise results than the chromameter dose. If fluoride ions ($F^-$) are included in the electrolyte, it will affect the $dE^*ab$ values of the $TiO_2$. layer. This is against the propensity, which is analyzed by XRD (X-ray diffraction) and XPS (X-ray photoelectron spectroscopy). It is important that the formular suggested in this study provides other metals which can be also anodized with the possibility of quantifying the thickness of the $TiO_2$ layer by the $dE^*ab$ values.

• Journal of Magnetics
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• v.6 no.1
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• pp.19-22
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• 2001

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt film thickness has been studied. As the CoCrPt film thickness increases from 25 nm, the Ms (saturation magnetization) increases rapidly at first and then more gradually. This Ms behavior is associated primarily with the formation of an "amorphous-like"reacted layer created by intermixing of CoCrPt and Ti at the CoCrPt/Ti interface and secondarily with a change of the Cr segregation mode with varying CoCrPt film thickness. Magnetic domain structure distinctively changes with increasing CsCrPt magnetic layer (ML) thickness. Also the strength of exchange coupling measured from the slope in the demagnetizing region of the M-H loop changes with ML thickness. The expansion of lattice parameters a and c at smaller film thickness suggests that the Cr segregation mode may be connected with the residual stress of the films. Finally, the negative nucleation field (Hn) shows a unique behavior with the change of strength of the exchange interaction.teraction.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.769-779
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• 2007

Statement of problem. When TiN coating is applied to the abutment screw, occurrence of greater preload and prevention of the screw loosening could be expected due to decrease of frictional resistance. However, the proper thickness of TiN coating on abutment screw has not been yet reported. Purpose. The purpose of this study is to find out the appropriate TiN coating thickness by evaluating the detorque force and the surface change of titanium abutment screw with various TiN coating thickness. Material and methods. 1. Material Thirty five non-coated abutment screws were prepared for TiN coating. TiN coatings were prepared by Arc ion plating method. Depending on the coating deposition time(CDT), experimental groups were divided into 6 groups(CDT 30min, 60min, 90min, 120min, 150min, 180min) and those of 1 group was not coated as a control group. Each group was made up of 5 abutment screws. 2. Methods FE-SEM(Field Emission Scanning Electron Microscoper) and EDX(Energy Dispersive X-ray Spectroscopy) were used to observe the surface of the abutment screw. Electric scales was used to measure the weight of the abutment screw after the repeated closing and opening of 10 trials. Detorque force was measured with digital torque gauge, at each trial. Results. 1. As the coating deposition time increased, the surface became more consistent and smooth. 2. As for the abutment screws that were TiN coated for more than 60 minutes, no surface change was found after the repeated closing and opening. 3. The TiN coated abutment screws showed less weight change than the non-coated abutment screws. 4. The TiN coated abutment screws showed higher mean detorque force than the noncoated abutment screws. 5. The abutment screw coated for 60 minutes showed the highest mean detorque force. Conclusion. The coating layer of proper thickness is demanded to obtain consistent and smooth coating surface, resistance to wear, and increased detorque force of the abutment screw. In conclusion, the coating deposition time of 60 minutes indicated improved mechanical property, when TiN coating was conducted on titanium abutment screw.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.903-910
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• 1998

Ti:LiNbO$_3$ optical waveguides have been fabricated by Ti-diffusion in wet oxygen atmosphere. The fabrication conditions of furnace temperature, diffusion time and bubbler temperature were 105$0^{\circ}C$, 8 hours and 9$0^{\circ}C$, respectively and Ti thickness was varied from 700$\AA$ to 1500$\AA$. In this paper, the nearfield patterns, mode sizes (hirizontal/vertical) and insertion loss of waveguides were discussed at wavelength 1550 nm ad function of Ti thickness. With the planar waveguide, the effective index change and diffusion depth were calculated at 632.8nm using the prism coupling method. From these results, the best Ti thickness in our conditions seems like to by 1200$\AA$~1300$\AA$.

• Journal of IKEEE
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• v.25 no.1
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• pp.69-75
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• 2021

In this work, we consider the fabrication method and electrical characteristics of dye-sensitized solar cells (DSSCs), which use titanium (Ti) metal thin films to replace expensive fluorine tin oxide (FTO) electrodes. The thickness of the Ti thin film was changed by adjusting the deposition time of the Ti, and the surface resistance decreased as the thickness of the Ti thin film became thicker. The thickness of the Ti thin film was shown to be similar to the surface resistance of the FTO thin film at approximately 190nm and the DSSC with a thickness of approximately 250nm showed the highest energy conversion efficiency of 4.24%. Furthermore, the possibility of commercialization was confirmed by fabricating and evaluating the DSSC module.

• Journal of the Korea Institute of Military Science and Technology
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• v.3 no.1
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• pp.231-236
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• 2000

The wall thickness of the Ti-6Al-4V Large-Diameter Seamless Tube, which is supposed to be a very important parameter in a system design, was measured during $360^{\circ}$ cold bending processes. The factors or processes affecting the wall thickness include 1) primary bending, 2)secondary or finishing step of the $360^{\circ}$ bending, 3)cleaning processes in CERO TRUTM(CT)process. But thinning effects of the wall thickness during the cleaning processes are negligible compared to those during the formers. The variations in the percentages of the change in wall thickness were found to be from -14% to +16%.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.196.1-196.1
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• 2016

TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.