• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.200-204
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• 2003

A statistical experiment method was employed to investigate the window of the thermal stability of $TiSi_2$films which are popular for Ti-salicide and ohmic layers. The statistical experimental results showed that the first order term of $TiSi_2$thickness and annealing temperature was acceptable as a function of $\Delta$resistivity by 95% reliability criteria, and R-sq value implying a fit accuracy of the model also showed a high value of 93.80%. We found that $\Delta$resistivity of the $TiSi_2$film annealed at $700^{\circ}C$ for 1 hr changed from 3.35 to $0.379\mu$$\Omega$$\cdot$cm with increasing thickness from 185 to $703\AA$, and TEX>$\Delta$resistivity of the $TiSi_2$film with a fixed thickness of 444 $\AA$ changed from 0.074 to 17.12 $\mu$$\Omega$$\cdot$cm with increasing temperature increase from 600 to $800^{\circ}C$. From these results, we report that the process conditions of$ 692^{\circ}C$-1 hr, $715^{\circ}C$-1 hr, and 73$0^{\circ}C$-1 hr for $TiSi_2$($400 \AA$) are stable by the criteria of 1, 2, and 3 $\mu$$\Omega$$\cdot$cm of $\Delta$resistivity, respectively.

• KIEAE Journal
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• v.3 no.2
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• pp.37-44
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• 2003

The aim of this study was to analyze the thermal performance through Test-Cell of TI-wall in domestic climate. This study was carried out as follows: 1) The TI-wall was studied for ability to reduce heat loss through the building envelope and analyzed to TIM properties. 2) Test models of TI-wall were designed through the investigation of previous paper and work, measured for winter and spring, and the thermal effects were analyzed. The type of the TIM used in test model is small-celled(diameter 4mm and thickness 50mm) capillary and cement brick(density $1500kg/m^3$) was used by thermal mass. 3) Test-cell of TI-wall was calibrated from measured data and the dynamic simulation program ESP-r 9.0. In these simulations, the measured climate conditions of TaeJon were used as outdoor conditions, and the simulation model of Test-cell was developed. 4) The sensitivity analysis is executed in various aspects with standard weather files and ESP-r 9.0, and then most suitable system of TI-wall are predicted. Finally, The suitable system of TI-wall was analysed according to sizes of air gap, kinds, thickness, and the surface absorption of therm wall. The result is following. In TI-wall, Concrete is better than cement brick, at that time the surface absorption is 95%, and the most efficient thickness is 250mm. As smaller of a air gap, as reducer of convection heat loss, it is efficient for heating energy. However, ensuring of a air gap at least more than 50mm is desirable for natural ventilation in Summer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.3
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• pp.335-342
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• 2003

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to from the oxide layer and the characteristics of the oxide layer formation are investigated. AISI 52100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4 ${\mu}{\textrm}{m}$ in coating thickness. AISI 1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in air for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.166-170
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• 2002

Artificial $BaTiO_3$(BTO)/$SrTiO_3$(STO) oxide superlattice have been deposited on MgO (100) single crystal substrate by pulsed laser deposition(PLD) method. The stacking periodicity of BTO/STO superlattice structure was varied from $BTO_{1\;unit\; cell}/STO_{1\;unit\; cell}$ to $BTO_{125\;unit\; cell}/STO_{125 \;unit \;cell}$ thickness with the total thickness of 100 nm. The result of X-ray diffraction showed the characteristics of superlattice in the BTO/STO multilayer structure. we have also confirmed that there was no interdiffusion at the interface between BTO and STO layers by high resolution transmission electron microscopy(HRTEM). The dielectric constant of superlattice increased with decreasing stacking periodicity of the BTO/STO superlattice within the critical thickness. The dielectric constant of the BTO/STO superlattice reached a maximum i.e., 1230 at a stacking perioicity of $BTO_{2\;unit\; cell}/STO_{2\;unit\; cell}$ .

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.62-68
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• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.19-24
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• 2001

In this study, Pb(La Ce)$TiO_3$ composition ceramics were manufactured for 20 MHz resonator application. Electromechanical coupling factor, mechanical quality factor and dynamic range of thickness vibration mode were measured as the variations of L/T(length/thickness) ratio of ceramic substrats. Mechanical quality factor and dynamic range of third overtone thickness vibration mode showed the highest value of 2,773 and 52.22 dB at specimen S4(l/t=12), respectively. The excellent temperature stability of resonant frequency suitable for resonator application was shown, regardless of thermal shock.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.720-725
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• 2001

In this study, Pb(La,Ce)Ti $O_3$ ceramics were manufactured for 20 MHz resonator application. Electromechanical coupling factor( $k_{t}$, $k_{t3}$, mechanical quality factor( $Q_{mt}$ , $Q_{mt3}$ and dydnamic range (D.R) of thickness vibration mode were measured as the variations of $\ell$/t(length/thickness) ratio of ceramic substrates. Mechanical quality factor( $Q_{mt3}$) and dynamic range of third overtone thickness vibration mode showed the highest value of 2,773 and 52.22dB at specimen S4($\ell$/t=12), respectively. The excellent temperature stability of resonant frequency suitable for resonator application was shown, regardless of thermal shock.k.ock.k.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.253-256
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• 2014

$Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.57-62
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• 1989

Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900$^{circ}C$ for 20 sec in Ar atmosphere. The sheet resistance of Ti-silicides was measured by 4-point probe, the thickness by $alpha$-step, and observed the behavior of As dopant in Si substrates by ASR. With increasing As doses, the thickness of Ti-silicides decreased and the sheet resistance of Ti-silicides increased. And we discussed the relationships between the above results and the factors of Si diffusion.