• 한국광학회지
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• 제8권5호
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• pp.382-386
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• 1997

MgF$_{2}$와 TiO$_{2}$를 각각 다른 두 증발원으로부터 동시에 증착시켜 혼합 박막을 제작하였다. 박막의 특성을 개선시키기 위해 이온 보조 증착(IAD)을 하였다. 제작된 MgF$_{2}$-TiO$_{2}$ 혼합 박막의 원소 조성비, 광학적 특성과 결정 구조를 분석하였다. 상대적 증착률을 달리하여 제작된 MgF$_{2}$-TiO$_{2}$ 혼합 박막의 Mg:Ti의 조성비는 비선형적으로 변화하였으며, MgF$_{2}$의 조성비를 상대적으로 증가시킴에 따라 혼합 박막의 굴절률은 감소하였고 Drude 모델을 잘 만족함을 알 수 있었다. 그리고 MgF$_{2}$의 조성비가 증가할수록 비정질인 TiO$_{2}$ 구조 사이에 다결정질인 MgF$_{2}$의 양이 증가하여 결정성을 갖는 박막으로 성장함을 확인하였다.

• 한국진공학회지
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• 제21권3호
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• pp.158-163
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• 2012

본 연구에서는 폴리머 애자의 자가세정 코팅을 위한 소재로써 $TiO_2$ 박막을 실리콘과 유리, 폴리머애자 기판위에 증착하였다. $TiO_2$ 박막은 $TiO_2$ 세라믹 타겟이 부착된 RF 마그네트론 스퍼터링 장치를 이용하여 증착하였다. $TiO_2$ 박막은 스퍼터링의 다양한 공정조건 중 RF 파워의 크기에 따라 100 nm의 두께로 증착하였다. RF 파워에 따라 증착되어진 $TiO_2$ 박막의 접촉각, 표면거칠기등 표면 특성을 확인하였으며, UV-visible등 광학적 특성을 고찰하여, 구조적 특성과의 관계를 고찰하였다.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.820-824
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• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• 한국재료학회지
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• 제21권9호
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• pp.509-514
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• 2011

In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• 한국표면공학회지
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• 제35권6호
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• pp.383-390
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• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 전기학회논문지
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• 제58권10호
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• pp.1982-1988
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• 2009

$TiO_2$ films are fabricated using silk printing method. Heat treatment temperature of films is 600[$^{\circ}C$]. From the analysis of microstructure, grain size of $TiO_2$ films is about $0.2{\sim}0.3[{\mu}m]$. Thickness of films is 30.19[${\mu}m$] and surface uniformity of films is good. From the analysis of crystalline structure, $TiO_2$ films transform anatase phase to rutile phase. Capacitance of films increases according to increase relative humidity and decrease measuring frequency. Hysteresis characteristics of capacitance and impedance are best at 45[%RH] and 75[%RH] respectively. Impedance of films increases according to decrease measuring frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1324_1325
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• 2009

The heterolayered $BaTiO_3/(Bi_{0.5}Na_{0.5})TiO_3$ thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric properties in the heterolayered teteragonal/rhombohedral structure composed of the $BaTiO_3$ and the $(Bi_{0.5}Na_{0.5})TiO_3$ thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BNT/BT thick films. The structural and electrical properties of the heterolayered BNT/BT thick films were studied. All PZT heterolayered thin films show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization oft heheterolayered BNT/BT thick films were superior to those of single composition $BaTiO_3$ and $(Bi_{1/2}Na_{1/2})TiO_3$, and those values for the heterolayered BNT/BT thick films sintered at $1100^{\circ}C$ were 916, 0.79 and $12.63{\mu}C/cm^2$.