• 한국세라믹학회지
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• 제35권9호
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.33-36
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• 1998

Epitaxially grown $Bi_4Ti_3O_{12}$ thin films on the MgO(100) substrates was prepared by dipping-pyrolysis process using metal naphthenates as starting materials. The films annealed at various temperatures were charactrized by X-ray diffraction $\theta$-2$\theta$ scans and pole-figure analysis ($\beta$ scanning). Highly c-axia oriented Bi4Ti3O12 films were crystallized by heat-treatment at 700$^{\circ}$ and 75$0^{\circ}C$ from precursor films pyrolyzed at 50$0^{\circ}C$. The X-ray pole-figure analysis indicated that the $Bi_4Ti_3O_{12}$ thin films have an epitaxial relationship with the MgO(100) substrates.

• 한국표면공학회지
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• 제32권4호
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• pp.538-546
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• 1999

Ti(IV)-Fe(III) oxide films were formed by MOCVD technique, and their photoelectrochemical properties were examined in 0.5M N $a_2$$SO_4$ solution by a photoelectrochemical polarization test. Ti(IV)-Fe(III) oxide films deposited at 40$0^{\circ}C$ by MOCVD have crystalline structure and are all n-type semiconductors. The photocurrent and the quantum efficiency of the films increase with increasing the iron cationic fraction ($X_{Fe}$ ) in the films. The energy band gap of the films increase linearly with increasing the iron cationic fraction in the films. Ti(IV)-Fe(III) oxide film of $X_{Fe}$ /=0.60 has high photocurrent response and corrosion resistance simultaneously.

• 한국진공학회지
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• 제4권S2호
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• pp.40-48
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• 1995

$TiB_2$-TiN double-layer coating have been prepared by ion beam enhanced deposition. AES, XRD, TEM and HRTEM were employed to characterize the $TiB_2$ layer. The microhardness of the coatings was evaluated by an ultra low-load microhardness indenter system, and the tribological behavior was examined by a ball-on-disc tribology wear tester. It was found that in a single titanium diboride layer, the composition is uniform along the depth of the film, and it is mainly composed of nanocrystalline $TiB_2$ with hexagonal structure, which resulted from the ion bombardment during the film growth. The hardness of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of 39 Gpa at ion energy of 85 keV. The tribological property of the TiB2 films is also improved by higher energy of 85keV. The tribological property of the $TiB_2$ films is also improved by higher energy ion beam bombardment. There is no major disparity in the mechanical properties of double-layer $TiB_2$/TiN coatings and TiN/$TiB_2$ coatings. Both show an improved wear resistance compared with single-layer $TiB_2$ films. The adhesion of double-layer coatings is also superior to that of single-layer films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.189-190
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1960-1961
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

• 한국세라믹학회지
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• 제43권2호
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• pp.114-120
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• 2006

Nano-size Au particle doped $TiO_2$ films were prepared with $Ti(OC_3H_7^i)_4$, polyvinylpyrrolidone(PVP), $HAuCl_4$ and $C_3H_7OH$ etc. by sol-gel method. $TiO_2$ gel films were obtained by the dip-coating method on the $SiO_2$ glass substrates, and then heat-treated at $700^{\circ}C$ for 10 min. The thickness of $TiO_2$ films were $0.7\~1.8\;{\mu}m$. It was found that the thickness of films prepared from PVP containing solution was about $2\~8$ times higher values than that of thin films without PVP. The size of Au particles doped in the films were about $350\~750\;nm$. Nano-size Au particle dispersed $TiO_2$ films showed high absorption peak at visible region 450nm, which made them good candidates for non-linear optical materials and photo-catalytic materials. The contact angle of $TiO_2$ film for water was $12.5^{\circ}$, and therefore it is clear that $TiO_2$ films have very high hydrophilic properties and the self-cleaning effects.

• 한국표면공학회지
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• 제49권3호
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• pp.307-315
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• 2016

The properties of AlTiN films by a cathodic arc deposition process have been studied. Oblique angle deposition has been applied to deposit AlTiN films. AlTiN films have been deposited on stainless steel (SUS304) and cemented carbide (WC) at a substrate temperature of $500^{\circ}C$. AlTiN films were analyzed by scanning electron microscopy, glow-discharge light spectroscopy, micro-vickers hardness, and nanoindenter. When applying a current of 50 A to the cathodic arc source, it showed that the density of macroparticle of AlTiN films was 5 lower than other deposition conditions. With the increase of the bias voltage applied to the substrate up to -150 V, the density of macroparticle was decreased. The change of the $N_2$ flow rate during coating process made no influence on the film properties. For the multi-layered films, the film prepared at oblique angle of $60^{\circ}$ showed the highest hardness of 28 GPa and $H^3/E^2$ index of 0.18. AlTiN films have been shown a good oxidation resistance up to $800^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.655-659
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• 2010

Nanoporous titanium dioxide ($TiO_2$) is very attractive material for various applications due to the high surface to volume ratio. In this study, we have fabricated nanoporous $TiO_2$ thin films on Si by anodic oxidation. 500-nm-thick titanium (Ti) films were deposited on Si by using electron beam evaporation. Nanoporous structures in the Ti films were obtained by anodic oxidization using ethylene glycol electrolytes containing 0.3 wt% $NH_4F$ and 2 vol% $H_2O$ under an applied bias of 5 V. The diameter of nanopores in the Ti films linearly increased with anodization time and the whole Ti layer could become nanoporous after anodizing for 3 hours, resulting in vertically aligned nanotubes with the length of 200~300 nm and the diameter of 50~80 nm. Upon annealing at $600^{\circ}C$ in air, the anodized Ti films were fully crystallized to $TiO_2$ of rutile and anatase phases. We believe that our method to fabricate nanoporous $TiO_2$ films on Si is promising for applications to thin-film gas sensors and thin-film photovoltaics.

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity