• Title/Summary/Keyword: Ti doped $In_2O_3$

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Eu-doped LGF Luminescent Down Converter Possible for TiO2 Dye Sensitized Solar Cells

  • Kim, Hyun-Ju;Song, Jae-Sung;Lee, Dong-Yun;Lee, Won-Jae
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.3
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    • pp.89-92
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    • 2004
  • For improving solar efficiencies, down conversion of high-energy photons to visible lights is discussed. The losses due to thermalization of charge carriers generated by the absorption of high-energy photons, can largely be reduced in a solar cell if more than one electron-hole pair can be generated per incident photon. The solar cell was constructed of dye-sensitized anatase-based TiO$_2$, approximately 30nm particle size, 6$\mu\textrm{m}$thickness, and 6${\times}$6$\textrm{mm}^2$ active area, Pt counter electrode and I$_3$$\^$-/I$_2$$\^$-/ electrolyte. After correction for losses due to light reflection and absorption by the conducting glass, the conversion of photons to electric current is practically quantitative in the plateau region of the curves. The incident photon to current conversion efficiency(IPCE) of N3 used as a dye in this work is about 80% at around 590nm and 610nm which is the emission spectrum of Eu doped LGF. The Eu doped LGF powder was prepared by conventional ceramic process, and used as a down converter for DSC after spin coated on the slide glass and fired.

Ferroelectricity of the $Pb(Sc_{1/2}Nb_{1/2}$O$_3$-$PbTiO_3$ based Ceramics ($Pb(Sc_{1/2}Nb_{1/2}$O$_3$-$PbTiO_3$계 세라믹스의 강유전성)

  • 김진수;김소정;김호기;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.149-152
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    • 1997
  • High-power piezoelectric materials are being developed for applications such as actuators and ultrasonic motors. In this paper, ferroelectric property of iron-doped 0.57 (Sc$_{1}$2//Nb$_{1}$2/)O$_3$-0.43 PbTiO$_3$. which is the morphotropic phase boundary composition for the PSN-PT system, was investigated. The maximum dielectric constant ( $\varepsilon$$_{33}$/$\varepsilon$$_{0}$ = 2551) and the minimum dielectric loss(tan $\delta$ = 0.51 %) at room temperature were obtained at 01. wt% and 0.3 wt% of iron additions. With additions of the Fe$_2$O$_3$ the electromechanical coupling factor of radial mode k$_{p}$ and the piezoelectric coefficient d$_{33}$ were slightly decreased, on the other hand the mechanical quality factor was increased significantly. The highest mechanical quality factor (Qm= 297) was obtained at 0.3 wt% Fe$_2$O$_3$, which is 4.4 times larger than that of pure 0.57 PSN-0.43PT ceramics. The temperature dependence of the dielectric constant and dielectic loss was observed between 2$0^{\circ}C$ and 35$0^{\circ}C$ .X> .X> .

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Effect of Internal Bias Field on Poling Behavior in Mn-Doped Pb(Mg1/3Nb2/3)O3-29 mol%PbTiO3 Single Crystal

  • Lee, Geon-Ju;Kim, Hwang-Pill;Lee, Ho-Yong;Jo, Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.5
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    • pp.382-385
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    • 2021
  • Electrical poling is a crucial step to convert ferroelectrics to piezoelectrics. Nevertheless, no systematic investigation on the effect of poling has been reported. Given that the poling involves an alignment of spontaneous polarization, the condition for poling should be different when a material has an internal bias field that influences the domain stability. Here, we present the effect of poling profile on the dielectric and piezoelectric properties in Mn-doped Pb(Mg1/3Nb2/3)O3-29 mol%PbTiO3 single crystal with an internal bias field. We showed that both the dielectric permittivity and the piezoelectric coefficient were further enhanced when the poling procedure ends with a field application along the opposite direction to the internal bias field. We expect that the current finding would give a clue to understanding the true mechanism for the electrical poling.

Effect of Mn on Dielectric and Piezoelectric Properties of 71PMN-29PT [71Pb(Mg1/3Nb2/3)O3-29PbTiO3] Single Crystals and Polycrystalline Ceramics

  • Oh, Hyun-Taek;Joo, Hyun-Jae;Kim, Moon-Chan;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.55 no.2
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    • pp.166-173
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    • 2018
  • In order to investigate the effect of Mn on the dielectric and piezoelectric properties of PMN-PT [$Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$], four different types of 71PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: (1) Undoped single crystals, (2) undoped polycrystalline ceramics, (3) Mn-doped single crystals, and (4) Mn-doped polycrystalline ceramics. In the case of single crystals, the addition of 0.5 mol% Mn to PMN-PT decreased the dielectric constant ($K_3{^T}$), piezoelectric charge constant ($d_{33}$), and dielectric loss (tan ${\delta}$) by about 50%, but increased the coercive electric field ($E_C$) by 50% and the electromechanical quality factor ($Q_m$) by 500%, respectively. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$) and thus specimens changed from piezoelectrically soft-type to piezoelectrically hard-type. This Mn effect was more significant in single crystals than in ceramics. These results demonstrate that Mn-doped 71PMN-29PT single crystals, because they are piezoelectrically hard and simultaneously have high piezoelectric and electromechanical properties, have great potential for application in fields of SONAR transducers, high intensity focused ultrasound (HIFU), and ultrasonic motors.

Microstructures and Dielectric Properties of Nanocrystalline $\textrm{La}^{3+}$-doped $\textrm{BaTiO}_3$ Ceramics (초미립 $\textrm{La}^{3+}$-doped $\textrm{BaTiO}_3$세라믹스의 미세구조 및 유전특성)

  • Cho, Ji-Man;Kim, Byong-Ho;Kim, Gyeung-Ho;Je, Hae-June;Lee, Hae-Won;Kim, Byung-Kook
    • Korean Journal of Materials Research
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    • v.9 no.10
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    • pp.956-961
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    • 1999
  • When the 0-2 mol% of $\textrm{La}_{3+}$ were added to the nanocrystalline $BaTiO_3$ powders and sintered at $1200~1400^{\circ}C$, the nanocrystailine $BaTiO_3$ ceramics having the average grain size of 110-240 nm were obtained except for when no $\textrm{La}_{3+}$ was added and sintered at > $1350^{\circ}C$. As the average grain size decreased from 240 nm to 110 nm, the tetragonality (c/a) and volume fraction of the $90^{\circ}$ domain decreased, and all the properties such as relative dielectric constant at room temperature, maximum relative dielectric constant at the temperature of phase transformation $\textrm{T}_{c}$ and diffuseness of phase transformation at $\textrm{T}_{c}$ also decreased. The results were attributed to the internal stress induced by inhibition of the $90^{\circ}$ domain formation in the case of finer grain size.

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Enhancement of PTCR Characteristics of MnO2 Doped Lead Free BaTiO3-(Bi0.5Na0.5)TiO3 Ceramics with High Tc (>165℃) (MnO2가 도핑된 무연 High Tc (>165℃) BaTiO3-(Bi0.5Na0.5)TiO3 세라믹의 PTCR 특성 향상)

  • Kim, Kyoung-Bum;Jang, Young-Ho;Kim, Chang-Il;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo;Lee, Woo-Young;Kim, Dae-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.723-727
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    • 2011
  • 0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

The activation Energy of the Niobium donor in n-type TiO2 film grown by Pulsed Laser Deposition (PLD 기법으로 성장된 n형 TiO2에서 Nb 도너의 활성화 에너지)

  • Bae, Hyojung;Ha, Jun-Seok;Park, Seung Hwan
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.41-44
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    • 2014
  • In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.

ZnO thin film Gas sensors for detection of TMA gas with Pt/Ti thin film heater (Pt/Ti 발열체가 내장된 TMA 가스 측정용 ZnO 박막 가스 센서)

  • 류지열;박성현;최혁환;권태하
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.6
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    • pp.127-135
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    • 1996
  • To increase the sensitivity and the selectivity of the sensors to TMA gas, the composition ratio and the growth conditions of the ZnO films are studied. Annealing of the ZnO films in the various time ranges and temperatures in the oxygen is carried out to enhance the stbility of the electrical resistance. Pt/Ti heater deposited on backside of the substrates in used to control the operating temperature of th esensor. The ZnO thin film sensors doped to 4.0 wt% $Al_{2}$O$_{3}$ 1.0wt.% TiO$_{2}$ and 0.2wt.% V$_{2}$O$_{5}$ exhibited a high sensitivity and an excellent selectivity for TMA gas. The sensors made with the thin films annealed at 700$^{\circ}$C for 60 minutes in the oxygen atmosphere had a good stability and linearity. The heater deposited in the ratio of 1 to 1 (Pt:Ti) had a good heating properties. The sensors fabricated using above conditions showed a good response to the actual gases of a mackerel at a step of deterioration after death.

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Structural and Thermal Analysis and Membrane Characteristics of Phosphoric Acid-doped Polybenzimidazole/Strontium Titanate Composite Membranes for HT-PEMFC Applications

  • Selvakumar, Kanakaraj;Kim, Ae Rhan;Prabhu, Manimuthu Ramesh;Yoo, Dong Jin
    • Composites Research
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    • v.34 no.6
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    • pp.373-379
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    • 2021
  • A series of novel PBI/SrTiO3 nanocomposite membranes composed of polybenzimidazole (PBI) and strontium titanate (SrTiO3) with a perovskite structure were fabricated with various concentrations of SrTiO3 through a solution casting method. Various characterization techniques such as proton nuclear magnetic resonance, thermogravimetric analysis, atomic force microscopy (AFM) and AC impedance spectroscopy were used to investigate the chemical structure, thermal, phosphate absorption and morphological properties, and proton conductivity of the fabricated nanocomposite membranes. The optimized PBI/SrTiO3-8 polymer nanocomposite membrane containing 8wt% of SrTiO3 showed a higher proton conductivity of 7.95 × 10-2 S/cm at 160℃ compared to other nanocomposite membranes. The PBI/SrTiO3-8 composite membrane also showed higher thermal stability compared to pristine PBI. In addition, the roughness change of the polymer composite membrane was also investigated by AFM. Based on these results, nanocomposite membranes based on perovskite structures are expected to be considered as potential candidates for high-temperature PEM fuel cell applications.

The Effect of SiO2 on the Microstructure and Electrical Properties of BaTiO3 PTC Thermistor (BaTiO3 PTC 써미스터의 미세구조 및 전기적 특성에 대한 SiO2 영향)

  • Chun, Myoung-Pyo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.22-26
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    • 2013
  • PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.