• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.430-433
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• 2001

The 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1300$^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures were coexisted in the 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics. The dielectric constant($\varepsilon$$\sub$r/) was increased with addition of Ce. The temperature coefficient of resonant frequency($\tau$$\sub$f/) was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the 0.96MgTiO$_3$-0.04SrTiO$_3$+0.2Ce ceramics was near zero, where the dielectric constant, quality factor, and $\tau$$\sub$f/ were 20.68, 50, 272 and -0.5pm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.282-285
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• 1999

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

• 공업화학
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• 제32권6호
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• pp.599-606
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• 2021

본 연구는 질소산화물 제거를 위하여 암모니아를 환원제로 사용하는 선택적 촉매 환원법에 있어 지지체에 셀레늄을 첨가하여 300 ℃ 이하에서 V₂O₅/WO₃/TiO₂의 반응 활성을 증진시키기 위한 실험 및 반응특성 연구를 수행하였다. 졸-겔법으로 Se-TiO₂ 및 TiO₂를 합성하였으며, 이를 지지체로 하여 V₂O₅/WO₃/TiO₂ 및 V₂O₅/WO₃/Se-TiO₂ 촉매를 제조하여 상용 촉매와 반응 활성을 비교하였다. 실험 결과, 졸-겔법으로 합성한 TiO₂를 사용한 촉매의 탈질 효율이 상용 TiO₂를 사용하여 제조한 촉매보다 낮은 결과를 보였으나 셀레늄을 첨가함에 따라 탈질 효율이 증진되었다. 따라서 BET, XRD, Raman, H₂-TPR 및 FT-IR분석을 통하여 셀레늄의 첨가가 촉매의 구조에 미치는 영향을 분석하였으며 셀레늄 첨가에 의한 비표면적의 증가와 단량체 및 복합체 바나듐 종의 형성이 반응 특성에 미치는 영향을 확인하였다.

• 전자공학회논문지A
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• 제33A권3호
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.17-22
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• 2004

[ $CaZrO_3$ ]세라믹스에 대하여 $CaTiO_3$세라믹스의 첨가량 변동에 따른 마이크로파 유전특성을 조사하였다. 또한 중유전율 LTCC 기능성 기판으로 활용하기 위하여 저융점의 유리 프리트를 첨가하여 $CaZrO_3-CaTiO_3$ 세라믹스의 저온 소결 거동과 마이크로파 유전특성을 평가하였다. 저온 소결 조제로 사용된 저응점의 유리 프리트를 $10-20 wt\%$ 범위로 첨가함으로서 $CaZrO_3-CaTiO_3$ 세라믹스의 소결온도를 $1450^{\circ}C$에서 $900^{\circ}C$이하로 낮출 수 있었다. 음의 온도계수를 갖는 $CaZrO_3$ 및 유리프리트에 대하여 양의 온도계수를 갖는 $CaTiO_3$ 세라믹스의 분율을 적정히 제어함으로서 제로의 온도계수를 구현할 수 있었다. $CaZrO_3-CaTiO_3$ 세라믹스에 저온 소결용 유리 프리트를 $15 wt\%$ 첨가하여 $875^{\circ}C$에서 소결한 경우. 유전율(k) 23, 품질계수(Q${\times}$f) 2500, 공진 주파수 온도계수$(T_f) -3 ppm/^{\circ}C$의 매우 양호한 마이크로파 유전특성을 나타내었다.

• 한국환경과학회지
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• 제16권12호
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• pp.1431-1437
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• 2007

Cobalt titanates($CoTiO_x$), such as $CoTiO_3$ and $Co_2TiO_4$, have been synthesized via a solid-state reaction and characterized using X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) measurement techniques, prior to being used for continuous wet trichloroethylene(TCE) oxidation at $36^{\circ}C$, to support our earlier chemical structure model for Co species in 5 wt% $CoO_x/TiO_2$(fresh) and(spent) catalysts. Each XRD pattern for the synthesized $CoTiO_3$ and $Co_2TiO_4$ was very close to those obtained from the respective standard XRD data files. The two $CoTiO_x$ samples gave Co 2p XPS spectra consisting of very strong main peaks for Co $2p_{3/2}$ and $2p_{1/2}$ with corresponding satellite structures at higher binding energies. The Co $2p_{3/2}$ main structure appeared at 781.3 eV for the $CoTiO_3$, and it was indicated at 781.1 eV with the $Co_2TiO_4$. Not only could these binding energy values be very similar to that exhibited for the 5 wt% $CoO_x/TiO_2$(fresh), but the spin-orbit splitting(${\Delta}E$) had also no noticeable difference between the cobalt titanates and a sample of the fresh catalyst. Neither of all the $CoTiO_x$ samples were active for the wet TCE oxidation, as expected, but a sample of pure $Co_3O_4$ had a good activity for this reaction. The earlier proposed model for the surface $CoO_x$ species existing with the fresh and spent catalysts is very consistent with the XPS characterization and activity measurements for the cobalt titanates.

• 한국세라믹학회지
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• 제35권8호
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• pp.791-794
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• 1998

• 대한금속재료학회지
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• 제49권7호
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• pp.577-582
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• 2011

The newly developed ${\alpha}-case$ controlled mold material for Ti investment castings was suggested in this research. The $Al_2O_3$ mold containing interstitial $TiO_2$ and substitutional $Ti_3Al$ was manufactured by the reaction between $Al_2O_3$ and Ti. It is obvious that as the $TiO_2$ and $Ti_3Al$ content in the mold surface were increased, the depth of the interfacial reaction was significantly reduced. In addition, substitutional $Ti_5Si_3$ in the mold surface owing to the reaction between Ti and $SiO_2$ from the binder was effective for ${\alpha}-case$ reduction. Therefore, the ${\alpha}-case$ reduction was accomplished by the diffusion barrier effect of interstitial $TiO_2$, substitutional $Ti_3Al$ and $Ti_5Si_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.335-338
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• 1998

The effect of glass flit addition on microwave dielectric properties of BaTiO$_3$-3TiO$_2$ ceramic was studied. Addition of glass frit to this system obtained sintered sample below sintering temperature 105$0^{\circ}C$. At BaTiO$_3$-3TiO$_2$+ g1ass frit 3wt% + BaWO$_4$6 wt%m, this ceramic showed excellent microwave properties of dielectric constant 34, Q$\times$f 8,100, temperature coefficient of resonant frequency 4 ppm/$^{\circ}C$ .

• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.422-426
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• 2006

[ $Sr_xCa_{(1-x)}TiO_3$ ] red phosphors doped with Pr(0.13 mol%) and Al(0.23 mol%) were synthesized by solid state reaction method. Change of crystal structure occurred in $Sr_xCa_{(1-x)}TiO_3:Pr,Al$ phosphors with increasing value of x. Green and red luminescence were observed from $SrTiO_3:Pr,Al$ phosphors at low temperature. However, only red luminescence in the case of $CaTiO_3:Pr,Al$ phosphors was measured at low temperature. The main cause of green luminescence was explained by the bandgap reduction.