• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.312-312
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• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• Journal of Environmental Health Sciences
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• v.3 no.1
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• pp.27-44
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• 1976

This study was carried out to evaluate the harmful factors in working environments and to investigate the labor productivity after improvement of environments, surveying 93 industrial establishments of 10 industries located in Youngdeungpo industrial area in Seoul. The results obtained were as follows: 1) The highest noise level of 125dB(A) was indicated at the rolling process of transport equipment manufacturing industry. 2) The best illumination level was shown in precise machinery industry and the worst was indicated in rubber products, metallic products and transport equipment manufacturing industries. 3) Thermal conditions were above threshold limit value (TLV) at more than two processes of all industries except printing industry. 4) The highest dust concentration was determined in textile and wearing manufacturing industry. 5) Organic solvents were detected at 52 processes in 93 industrial establishments and 33 processes of them showed higher than TLV. The results about harmful chemicals were as follows: a) sulfur dioxide ($SO_2$)was determined higher than TLV on welding process of metallic product manufacturing industry and heat treatment process of transport equipment manufacturing industry. b) Carbon monoxide (CO) concentration was 700ppm at heat treatment process of transport equipment manufacturing industry, indicating 14 times of TLV. c) vinylchloride concentration in the air of PVC raw material mixing process and PVC preparation process of chemical product manufacturing industry was determined higher than TLV. d) Hydrochloride (HCl) concentration in the air of wire expanding process of transport equipment manufacturing industry was determined higher than TLV. 7) Higher values of lead concentration than TLV were determined at lead welding metallic product manufacturing industry and type planting process of process of printing industry, $1.8mg/m^3$ and $0.3mg/m^3$ respectively. 9) 22, 968 of 52, 855 workers (i.e. 43.5%) in 93 industries were exposed to various harmful agents. 10) It was found that the improvement of illumination in electric apparatus manufacturing industry (from 20~40 lux to 420 lux) resulted in an increase in productivity of 6.5% per capita and a decrease in faulty products of 19%. 11) Improvement of environments using local exhaust ventilation system resulted in a decrease of harmful substances lower than TLV and an increase in productivity of 11.4%. 12) Improvement of shovelling tools based on ergonomics resulted in a reduction in energy expenditure of 25.3% and an increase in productivity of 32.2% per capita.

• Korean Journal of Optics and Photonics
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• v.28 no.5
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• pp.236-240
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• 2017

In this paper, we investigate the thermal response of skin tissue to high-intensity focused ultrasound (HIFU) by means of infrared (IR) thermal imaging. For skin tightening, a 7-MHz ultrasound transducer is used to induce irreversible tissue coagulation in porcine skin. An IR camera is employed to monitor spatiotemporal changes of the temperature in the tissue. The maximum temperature in the tissue increased linearly with applied energy, up to $90^{\circ}C$. The extent of irreversible tissue coagulation (up to 3.2 mm in width) corresponds well to the spatial distribution of the temperature during HIFU sonication. Histological analysis confirms that the temperature beyond the coagulation threshold (${\sim}65^{\circ}C$) delineates the margin of collagen denaturation in the tissue. IR thermal imaging can be a feasible method for quantifying the degree of thermal coagulation in HIFU-induced skin treatment.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.31 no.1
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• pp.83-97
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• 2021

Wireless sensors that make up the Wireless Sensor Network generally have extremely limited power and resources. The wireless sensor enters the sleep state at a certain interval to conserve power. The Sleep deflation attack is a deadly attack that consumes power by preventing wireless sensors from entering the sleep state, but there is no clear countermeasure. Thus, in this paper, using clustering-based binary search tree structure, the Sleep deprivation attack detection model is proposed. The model proposed in this paper utilizes one of the characteristics of both attack sensor nodes and normal sensor nodes which were classified using machine learning. The characteristics used for detection were determined using Long Short-Term Memory, Decision Tree, Support Vector Machine, and K-Nearest Neighbor. Thresholds for judging attack sensor nodes were then learned by applying the SVM. The determined features were used in the proposed algorithm to calculate the values for attack detection, and the threshold for determining the calculated values was derived by applying SVM.Through experiments, the detection model proposed showed a detection rate of 94% when 35% of the total sensor nodes were attack sensor nodes and improvement of up to 26% in power retention.

• Journal of Korean Tunnelling and Underground Space Association
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• v.23 no.1
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• pp.47-60
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• 2021

Hydrogen is a next-generation energy source, and according to the roadmap for activating the hydrogen economy, it is expected that industries to stably produce, store, and transport of hydrogen as well as the supply of hydrogen fuel cell vehicles will be made rapidly. Accordingly, safety measures for accidents of hydrogen vehicles in confined spaces such as tunnels are required. In this study, as part of a study to ensure the safety of hydrogen fuel cell vehicles in road tunnels, a basic investigation and research on the risk of fire and explosion due to gas leakage and hydrogen tank rupture among various hazards caused by hydrogen fuel cell vehicle accidents in tunnels was conducted. The following results were obtained. In the event of hydrogen fuel cell vehicle accidents, the gas release rate depends on the orifice diameter of TPRD, and when the gas is ignited, the maximum heat release rate reaches 3.22~51.36 MW (orifice diameter: 1~4 mm) depending on the orifice diameter but the duration times are short. Therefore, it was analyzed that there was little increase in risk due to fire. As the overpressure of the gas explosion was calculated by the equivalent TNT method, in the case of yield of VCE of 0.2 is applied, the safety threshold distance is analyzed to be about 35 m, and number of the equivalent fatalities are conservatively predicted to reach tens of people.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2003.09a
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• pp.67-67
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• 2003

It is crucial to minimize setup errors of a cancer treatment machine using a high energy and to perform precise radiation therapy. Usually, port film has been used for verifying errors. The Korea Cancer Center Hospital (KCCH) has manufactured digital electronic portal imaging device (EPID) system to verify treatment machine errors as a Quality Assurance (Q.A) tool. This EPID was consisted of a metal/fluorescent screen, 45$^{\circ}$ mirror, a camera and an image grabber and could display the portal image with near real time KIRAMS has also made the acrylic phantom that has lead line of 1mm width for ligh/radiation field congruence verification and reference points phantom for using as an isocenter on portal image. We acquired portal images of 10$\times$10cm field size with this phantom by EPID and portal film rotating treatment head by 0.3$^{\circ}$, 0.6$^{\circ}$ and 0.9$^{\circ}$. To check field size, we acquired portal images with 18$\times$18cm, 19$\times$19cm and 20$\times$20cm field size with collimator angle 0$^{\circ}$ and 0.5$^{\circ}$ individually. We have performed Flatness comparison by displaying the line intensity from EPID and film images. The 0.6$^{\circ}$ shift of collimator angle was easily observed by edge detection of irradiated field size on EPID image. To the extent of one pixel (0.76mm) difference could be detected. We also have measured field size by finding optimal threshold value, finding isocenter, finding field edge and gauging distance between isocenter and edge. This EPID system could be used as a Q.A tool for checking field size, light/radiation congruence and flatness with a developed video based EPID.