• 한국재료학회지
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• 제21권9호
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• pp.477-481
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• 2011

Composites of insulating polyethylene and carbon black are widely used in switching elements, conductive paint, and other applications due to the large gap of resistance value. This research addresses the critical exponent of dielectric breakdown strength of polymer matrix composites (PMC) made with carbon black and polyethylene below the percolation threshold (Pt) for the first time. Here, Pt means the volume fraction of carbon black of which the resistance of the PMC is transferred from its sharp decrease to gradual decrease in accordance with the increase of carbon-black-filled content. First, the Pt is determined based on the critical exponents of resistivity and relative permittivity. Although huge cohesive bodies of carbon black are formed in case of being less than the Pt, a percolation path connecting the conducting phases is not formed. The dielectric breakdown strength (Dbs) of the PMC below Pt is measured by using an impulse voltage in the range from 10 kV to 40 kV to avoid the effect of joule heating. Although the observed Dbs data seems to be well fitted to a straight line with a slope of 0.9 on a double logarithm of (Pt-$V_{CB}$) and Dbs, the least squares method gives a slope of 0.97 for the PMC. It has been found that finite carbon-black clusters play an important role in dielectric breakdown.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권2호
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• pp.60-63
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• 2004

The electrical breakdown characteristics of different types of soil samples have been measured. It is shown that the threshold soil breakdown strength is affected by many factors, such as types of soil, grain size, and soil compaction. The breakdown process in the test soil samples appears to be due to air ionization in the voids between the soil particles. The results have been compared with the relevant experimental results of other researchers.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• 한국세라믹학회지
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• 제52권3호
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• pp.209-214
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• 2015

Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$, was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$, was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$, whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.

• 한국정보과학회논문지:정보통신
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• 제32권2호
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• pp.215-219
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• 2005

Ad-hoc 네트워크 내의 무선 이동 노드들은 일반적으로 전원 용량이 충분하지 않기 때문에 통신 중의 전원관리가 매우 중요하다. 이러한 전력 소모를 고려한 프로토콜로 MTPR, MBCR, MMBCR, CMMBCR 등이 제안되어 있으나, 전송 중 중간노드가 방전되어 링크가 단절되는 현상은 고려하지 못하고 있다. 따라서 경로의 연속성을 보장하기에는 미흡하다. 본 논문에서는 경로의 연속성을 증대하기 위한 세 가지 방안을 제안한다. 신호 세기가 임계치 이하인 경우 사전에 대체 경로를 설정하여 링크 단절에 대비한다. 전원용량이 임계치 이하로 떨어지는 경우에도 이를 미리 알려 대체 경로를 설정한다. 또한 멀티채널상의 중간 노드는 잔여 용량과 신규 링크 설정 요청에 필요한 전력을 비교하여 선택적으로 허락함으로써 중간 노드의 수명을 연장시키는 방안을 제안한다. 시뮬레이션 결과를 통하여 제안된 방안이 경로 연속성을 강화시키며, 신뢰적인 연결 관리에 의하여 지연 시간을 줄이는 성능 향상을 보였다.

• Journal of information and communication convergence engineering
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• 제2권2호
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• pp.93-96
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• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.

• 대한금속재료학회지
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• 제50권8호
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• pp.613-618
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• 2012

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.537-541
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• 2003

강유전체(SrTiO$_3$) 박막을 게이트 절연층으로 하여 수소화 된 비정질 실리콘 박막 트랜지스터를 유리 기판위에 제조하였다. 강유전체는 기존의 SiO$_2$, SiN 등과 같은 게이트 절연체에 비하여 유전특성이 매우 뛰어나 TFT의 ON 전류를 증가시키고 문턱전압을 낮추며 항복특성을 개선하여 준다. PECVD 에 의하여 증착된 a-Si:H 는 FTIR 측정 결과 2,000 $cm^{-}$1 과 635 $cm^{-}$l 및 876 cm-1 에서 흡수 밴드가 나타났으며, 2,000 $cm^{-1}$ / 과 635 $cm^{-1}$ / 은 SiH$_1$ 의 stretching 과 rocking 모드에 기인 한 것이며 876 $cm^{-1}$ / 의 weak 밴드는 SiH$_2$ vibration 모드에 의한 것이다. a-SiN:H 는 optical bandgap 이 2.61 eV 이고 굴절률은 1.8 - 2.0, 저항률은 $10^{11}$ - $10^{15}$ $\Omega$-cm 정도로 실험 조건에 따라 약간 다르게 나타난다. 강유전체(SrTiO$_3$) 박막의 유전상수는 60 - 100 정도이고 항복전계는 1MV/cm 이상으로 우수한 절연특성을 갖고 있다. 강유전체를 이용한 TFT 의 채널 길이는 8 - 20 $\mu$m, 채널 넓이는 80 - 200 $\mu$m 로서 드레인 전류가 게이트 전압 20V에서 3 $\mu$A 이고 Ion/Ioff 비는 $10^{5}$ - $10^{6}$, Vth 는 4 - 5 volts 이다.