• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4152-4158
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• 2012

The Stereo X-ray inspection system is designed for effectively providing the additional information of objects than the conventional inspection system that offers only 2D cross-section of objects. We studied the geometric improvement of the stereo X-ray inspection system, the stereo matching algorithm of the single object using the edge and the volume reconstruction method for the inspected object. In this paper, we conduct a matching algorithm to find the correspondences between the images and reconstruct 3-D shapes of real objects using the stereo X-ray images. Also, we apply a new 3D reconstruction algorithm for the discrimination of two objects. For the separation of the overlapping objects, we calculate the vector of the object and divide inner and outer voxel of objects. And for the elimination of the overlapping area, we study the reconstruct 3D shapes using the threshold based Z-axis. The experimental results show that the proposed technique can enhance the accuracy of stereo matching and give more efficient visualization for overlap objects in the restricted environment.

• Journal of Internet Computing and Services
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• v.14 no.4
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• pp.13-24
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• 2013

IEEE 802.15.4 network and WiFi network are installed to overlap each other and configured to use adjacent frequency bands in which case the communication service required by applications can not be guaranteed because of randomly increased frame transmission delay and frequent frame transmission failures at nodes in IEEE 802.15.4 network. In this paper, transmission delay model at IEEE 802.15.4 nodes and an experimental system to evaluate the interference from WiFi traffic are described, then elements for the evaluation of interference are measured with the analysis of their characteristics. A sequential method of using medium access layer and physical layer elements of IEEE 802.15.4 protocols is proposed to decide interference from WiFi network. With the proposed method, if an evaluation function having frame transmission failures and transmission delay as variables returns a value greater than a threshold, intensive measurements of wireless channel power are carried out subsequently and the final decision of interference is made by the calculated average channel power. Experimental results of the method show that the decision time is reduced with increased frequency of decision in comparison to an other similar method.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.450-460
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• 2017

T wave is cardiac parameters that represent ventricular repolarization, it is very important to diagnose arrhythmia. Several methods for detecting T wave have been proposed, such as frequency analysis and non-linear approach. However, detection accuracy is at the lower level. This is because of the overlap of the P wave and T wave depending on the heart condition. We propose T wave detection algorithm based on target area extraction through QRS cancellation and moving average. For this purpose, we detected Q, R, S wave from noise-free ECG(electrocardiogram) signal through the preprocessing method. And then we extracted P, T target area by applying decision rule for four PAC(premature atrial contraction) pattern another arrhythmia through moving average and detected T wave using RT interval and threshold of RR interval. The performance of T wave detection is evaluated by using 48 record of MIT-BIH arrhythmia database. The achieved scores indicate the average detection rate of 95.32%.

• Journal of KIISE:Computing Practices and Letters
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• v.10 no.6
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• pp.499-506
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• 2004

The copper foil surface inspection system is necessary for the factory automation and product quality. The developed system is composed of the high speed line scan camera, the image capture board and the processing computer. For the system resource utilization and real-time processing, multi-threaded architecture is introduced. There are one image capture thread, 2 or more defect detection threads, and one defect communication thread. To process the high-speed input image data, the I/O overlap is used through the double buffering. The defect is first detected by the predetermined threshold. To cope with the light irregularity, the compensation process is applied. After defect detection, defect type is classified with the defect width, eigenvalue ratio of the defect covariance matrix and gray level of defect. In experiment, for high-speed input image data, real-time processing is possible with multi -threaded architecture, and the 89.4% of the total 141 defects correctly classified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.