• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.34-37
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• 1992

In this paper, the $(SrPb)(CaMg)TiO_3$-xBi_2O_3{\cdot}3TiO_2$ ceramics with paraelectric properties were fabricated by the mixed oxide method. In order to investigate the behavior of charged particles, the characteristics of electrical conduction and thermally stimulated current were measured respectively. As a result on characteristics of the electrical conduction, the leakage current was increased as measuring temperature was increased. At room temperature, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to spare charge which injected from electrode, above 40[kV/cm]. Thermally stimulated currents(TSC) spectra with various biasing fields exhibited three distinguished peaks that were denoted as ${\alpha}$, ${\alpha}'$ and ${\beta}$ peak, each of which appeared at nearby -30, 20 and 95[$^{\circ}C$] respectively. It is confirmed that the a peak was due to trap electron trapped in the grainboundary, and ${\alpha}'$ peak that was observed above only 1.5[kV/mm] was attributed to field-enforced ferroelectric polarization. The origin of ${\beta}$ peak was identified as ion migration which caused the degradation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.208-209
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• 2011

In this work, we developed self-assembled monolayers (SAMs) of alkanethiols on gold that can release amine groups, when an electrical potential was applied to the gold. The strategy was based on the introduction of the electroactive carbamate group, which underwent the two-electron oxidation with simultaneous release of the amine molecules, to alkanethiols. The synthesis of the designed thiol compounds was achieved by coupling isocyanate-containing compound with hydroquinone. The electroactive thiols were mixed with hydroxyl-containing alkanethiol [$HS(CH_2)_{11}OH$] to form mixed monolayers, and cyclic votammetry was used for the characterization of the release. The mixed SAMs showed a first oxidation peak at +540 mV (versus Ag/AgCl reference electrode), demonstrating irreversible conversion from carbamate to hydroqinone with simultaneous release of the amine groups. The second and third cycles showed typical reversible redox reaction of hydroquinone and quione: the oxidation and reduction occurred at +290 mV and -110 mV, respectively. The measurement of ToF-SIMS further indicates that electrochemical-assisted chemical reaction successfully released amine groups. This new SAM-based electrochemistry would be applicable for direct release of biologically active molecules that contain amine groups.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.1-7
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• 2016

Bioelectrical impedance (BI) at popliteal regions was measured using a bioelectrical impedance measurement system (BIMS), which employs the multi-frequency and the two-electrode method. Experiments were performed as follows. First, a constant AC current of $800{\mu}A$ was applied to the popliteal regions (left and right) and the BI was measured at eight different frequencies from 10 to 500 kHz. When the applied frequency greater than 50 kHz was applied to human's popliteal regions, the BI was decreased significantly. Logarithmic plot of impedance vs. frequency indicated two different mechanisms in the impedance phenomena before and after 50 kHz. Second, the relationship between resistance and reactance was obtained with respect to the applied frequency using BI (resistance and reactance) acquired from the popliteal regions. The phase angle (PA) was found to be strongly dependent on frequency. At 50 kHz, the PA at the right popliteal region was $7.8^{\circ}$ slightly larger than $7.6^{\circ}$ at the left popliteal region. Third, BI values of extracellular fluid (ECF) and intracellular fluid (ICF) were calculated using BIMS. At 10 kHz, the BI values of ECF at the left and right popliteal regions were $1664.14{\Omega}$ and $1614.08{\Omega}$, respectively. The BI values of ECF and ICF decreased sharply in the frequency range of 10 to 50 kHz, and gradually decreased up to 500 kHz. Logarithmic plot of BI vs. frequency shows that the BI of ICF decreased noticeably at high frequency above 300 kHz because of a large decrease in the capacitance of the cell membrane.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.697-702
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• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• Korean Journal of Clinical Laboratory Science
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• v.54 no.2
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• pp.157-162
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• 2022

The purpose of the direct cortical and subcortical stimulation technique is to prevent false positives caused by transcranial electrical motor evoked potentials (TceMEP) in surgery on patients with brain tumors that have occurred around the motor cortex and to preserve the correct mapping of motor areas during surgery and the corticospinal tract. In addition, it reduces the trial and error that occurs during the intraoperative neurophysiological monitoring (INM) process and minimizes the test time, so that accurate information is communicated to the surgeon with quick feedback on the test results. The most important factors of this technique are, first, examination at a stimulus threshold of a certain intensity, and second, maintaining anesthesia depth at an appropriate level to prevent false positives from occurring during surgery. The third is the installation of a multi-level channel recording electrode on the opposite side of the area of operation to measure the TceMEP waveform and the response to direct cortical and subcortical stimulation in as many muscles as possible. If these conditions are maintained, it is possible to predict causes that may occur in other factors, not false positives, from the INM test.

• Journal of Korean Neurosurgical Society
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• v.29 no.8
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• pp.1024-1029
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• 2000

Objectives : With recent improvements in neuroimaging and the development of third and fourth-generation radiosurgical dose-planning soft ware, came a renewed interest in using radiosurgery for the treatment of movement disorders. Radiosurgery involves no opening of the cranium and no incisions, eliminating both the risk of hemorrhage from passing an electrode to the depths of meningitis from operative infection. It is for these reasons stereotactic radiosurgical treatment of movement disorders has value in a small subgroup of patients. The authors report four cases of Parkinson's disease and one case of dystonia that were treated by Gamma knife. Methods : Radiosurgical nucleus ventralis intermedius thalamotomy using the gamma knife unit was performed to make lesion in two Parkinson's disease patients. A radiation dose of 120Gy was delivered to nucleus using a single 4-mm collimator plug pattern following classic anatomical landmarks. Patients were followed for a median of 10.5 months(range 9-12 months). An independent neurological evaluation of tremor, based on the change in the United Parkinson's Disease Rating Scale tremor score(UPDRS), was correlated with a subjective evaluation. Gamma knife ventrolateral(V.O.P) thalamotomy was performed in one case of dystonia. A central dose of 150Gy was delivered and the patient was followed for 18 months. Gamma knife globus pallidus interna pallidotomy was performed in two Parkinson's disease patients. A radiation dose of 130Gy(range 120-140Gy) was delivered. Patients were followed for a median of 13 months(range 9-14 months). Result : Ventrolateral thalamotomy in dystonia produced regained left hand usage in order to be able to use the telephone. Ventralis intermedius thalamotomy produced an excellent improvement of the tremor in one case, mild improvement of the tremor in the other case of Parkinson's disease. A globus pallidus internalis(GPi) pallidotomy produced improvement of rigidity and dyskinesia : one other showed no change. There were no neurological complications. Conclusion : Gamma Knife thalamotomy considered a safe and effective technique for the treatment of tremor in Parkinson's disease. Although the results from Longer follow-up is not available yet, the short-term results seem to be encouraging.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.33-39
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• 1998

To AC impedance study was performed in this study on the interfacial reaction between organic electrolyte and amorphous tungsten oxides thin film, cathodically coloring oxide, prepared by e-beam evaporation method in the 1 M $LiClO_4/PC$ organic solution. The electrochemical reactions at the interface were analyzed by the transient method and the complex impedance spectroscopy. The impedance spectrums showed that the electro-chemical intercalation of lithium cations was consisted of the following three steps; the first step, the charge transfer reaction of lithium cation at the interface between amorphous tungsten oxides thin film and the organic electrolyte, the second step, the adsorption of lithium atom on the surface of amorphous tungsten oxides thin film, and then the third step, the absorption and the diffusion of lithium atom into amorphous tungsten oxides thin layer. The bleaching and the coloring characteristics of amorphous tungsten oxides thin film were explained in terms of thermodynamic and kinetic variables, the simulated $R_{ct},\;C_{dl},\;D$ and $\sigma_{Li}$ by CNLS fitting method. Especially it was found that the limiting values of electrochromic reaction were the molar ratio of lithium, y=0.167 and the electrode potential, E=2.245 V (vs. Li).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.273-273
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• 2013

Recently, Point-of-care (POC) testing microdevices enable to do the patient monitoring, drug screening, pathogen detection in the outside of hospital. Immunochromatographic strip (ICS) is one of the diagnostic technologies which are widely applied to POC detection. Relatively low cost, simplicity to use, easy interpretations of the diagnostic results and high stability under any circumstances are representative advantages of POC diagnosis. It would provide colorimetric results more conveniently, if the genetic analysis microsystem incorporates the ICS as a detector part. In this work, we develop a reverse transcriptase-polymerase chain reaction (RT-PCR) microfluidic device integrated with a ROSGENE strip for colorimetric influenza H1N1 virus detection. The integrated RT-PCR- ROSGENE device is consist of four functional units which are a pneumatic micropump for sample loading, 2 ${\mu}L$ volume RT-PCR chamber for target gene amplification, a resistance temperature detector (RTD) electrode for temperature control, and a ROSGENE strip for target gene detection. The device was fabricated by combining four layers: First wafer is for RTD microfabrication, the second wafer is for PCR chamber at the bottom and micropump channel on the top, the third is the monolithic PDMS, and the fourth is the manifold for micropump operation. The RT-PCR was performed with subtype specific forward and reverse primers which were labeled with Texas-red, serving as a fluorescent hapten. A biotin-dUTP was used to insert biotin moieties in the PCR amplicons, during the RT-PCR. The RT-PCR amplicons were loaded in the sample application area, and they were conjugated with Au NP-labeled hapten-antibody. The test band embedded with streptavidins captures the biotin labeled amplicons and we can see violet colorimetric signals if the target gene was amplified with the control line. The off-chip RT-PCR amplicons of the influenza H1N1 virus were analyzed with a ROSGENE strip in comparison with an agarose gel electrophoresis. The intensities of test line was proportional to the template quantity and the detection sensitivity of the strip was better than that of the agarose gel. The test band of the ROSGENE strip could be observed with only 10 copies of a RNA template by the naked eyes. For the on-chip RT-PCR-ROSGENE experiments, a RT-PCR cocktail was injected into the chamber from the inlet reservoir to the waste outlet by the micro-pump actuation. After filling without bubbles inside the chamber, a RT-PCR thermal cycling was executed for 2 hours with all the microvalves closed to isolate the PCR chamber. After thermal cycling, the RT-PCR product was delivered to the attached ROSGENE strip through the outlet reservoir. After dropping 40 ${\mu}L$ of an eluant buffer at the end of the strip, the violet test line was detected as a H1N1 virus indicator, while the negative experiment only revealed a control line and while the positive experiment a control and a test line was appeared.