• Journal of the korean Society of Automotive Engineers
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• v.10 no.2
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• pp.61-69
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• 1988

The finite-difference three-dimensional boundary layer procedure of Chang and Patel is modified and applied to solve the boundary layer development on the automobile surface. The inviscid pressure distribution needed to solve the boundary layer equations is obtained by using a low order panel method. The plane of symmetry boundary layer exhibits the strong streamline divergence up to the midbody and convergence thereafter. The streamline divergence in front of the windshield helps the boundary layer to overcome the sever adverse pressure gradient and avoid the separation. The relaxation of the pressure right after the top of the wind-shield, on the other hand, makes the overly thinned boundary layer to readjust and prompts the streamlines to converge into the symmetry plane before the external streamlines do. The three-dimensional characteristics are less apparent after the midbody and the boundary layer is similar to that of the two-dimensional flow. The results of the off-plane-of-symmetry boundary layer are also presented.

• Journal of the Korea Furniture Society
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• v.20 no.6
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• pp.575-580
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• 2009

This study was carried out to manufacture wooden vessels by small diameter wood and wasted wood of Castanea crenata Sieb. et Zucc, which has been largely planted in southern area. We made spice set, tea box set, cookie vessel set, bowl set and accessory set. With the development of edged tools, the human species has been able to fashion wood to change and enhance its environment - one only has to look at the history of all cultures to see examples of wooden artifacts and structures. Even with the development of synthetic materials and the progress of automated, mechanized production of wood and wood products, the raw material is still processed by traditional methods to meet a never-ending demand for products made from this most desirable natural material. Chestnut wood has high added value and natural color grain and is very useful for wooden vessel. Thinned low grade trees can be used to produce wooden vessel. Therefore this result can promote thinning and produce good forestation.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1360-1363
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• 1987

Two edge detection methods are devised and tested. First one makes use of mean-difference between two connected regions after bimodal thresholding within a local window. It appears experimentally to provide reduced edge width maintaining good connectivity. It seems due to the use of the threshold obtained from a larger neighborhood. Second one uses additionally the gradient information to detect approximate zero crossing points of second directional derivative. This provides edges thinned nearly to one pixel width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.741-744
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• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.739-742
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• 2002

This paper described on the fabrication of microstructures by DRIE(deep reactive ion etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing($1000^{\circ}C$, 60 min.), The SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as an accurate thickness control and a good flatness.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1020-1022
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• 1998

Silicon membrane to be used for micropump is fabricated and the deflection of the membrane driven by the electromagnetic force is measured. Silicon and glass are anodic bonded and Si is thinned. Silicon membrane is fabricated by the glass etching. The gold pattern can be protected against HF by the washing and fixing process under the glass etching process. The electromagnetic force is gained by the magnetic field driven by the current flowing through two coils. Deflection of the silicon membrane has a tendency of increasing with the increase of the driving current.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

• Journal of Ocean Engineering and Technology
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• v.16 no.5
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• pp.66-72
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• 2002

Fracture behaviors of pipes with local wall thinning are very important for the integrity of nuclear power plant. However, effects of local wall thinning on strength and fracture behaviors of piping system were not well studied. Acoustic emission(AE) has been widely used in various fields because of its extreme sensitivity, dynamic detection ability and location of growing defects. In this study, we investigated failure modes of locally wall thinned pipes and AE signals by bending test. From test results, we could be divided four types of failure modes of ovalization, crack initiation after ovalization, local buckling and crack initiation after local buckling. And fracture behaviors such as elastic region, yielding region, plastic deformation region and crack progress region could be evaluated by AE counts, accumulative counts and time-frequency analysis during bending test. The result of the frequency range is expected to be basic data that can inspect plants in real-time.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.5
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• pp.1200-1207
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• 1996

The paper presents and analyzes two efficient burst-level bandwidth reservation protocols for multi-hop ATM Local Area Networks. With the tell-and-wait (TNW) protocol and the tell-and-go (TNG) protocol[6], a negative acknowledgmen(NACK) message representing the bandwidth starvation on a switch on the source-destnation path can be always sent by a destination. We note that the protocols waste more bandwidth as the round-trip delay increases, since the switches on the path must reserve the bandwidth until the NACK will arrive. Based on this pitfall, the proposed protocols allow and ATM node, rather than a destination node to send a NACK. This allowance can save the needless bandwidth wastage. Using the thinned load approximation method, we show the proposed protocols have good performance and practical simplicity. Thus, the proposed protocols may be candidates for the ABR service in multi-hop ATM LANs and ATM WANs.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1890-1892
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• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -750 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.