• Title/Summary/Keyword: Thin-film solar cells

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Passivation Quality of ALD $Al_2O_3$ Thin Film via Silicon Oxide Interfacial Layer for Crystalline Silicon Solar Cells (실리콘 산화막의 두께에 따른 ALD $Al_2O_3$ 박막의 passivation 효과)

  • Kim, Young-Do;Park, Sung-Eun;Tark, Sung-Ju;Kang, Min-Gu;Kwon, Soon-Woo;Yoon, Se-Wang;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.93-93
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    • 2009
  • 실리콘 태양전지의 효율 향상을 위한 노력의 일환으로 결정질 실리콘 웨이퍼 표면passivation 물질 중 Atomic Layer Deposition (ALD)을 이용하여 증착한 $Al_2O_3$ 박막에 대한 관심이 증가하고 있다. 본 연구에서는 $Al_2O_3$ 박막의 증착 전 실리콘 웨이퍼의 산화막 두께에 따른 passivation 효과에 대해서 연구하였다. 실리콘 산화막은 $HNO_3$ 용액을 사용하여 화학적으로 생성시켰으며 $HNO_3$ 용액과의 반응 시간을 조절하여 실리콘 산화막의 두께를 조절하였다. 실리콘 산화막 생성 후 ALD로 $Al_2O_3$ 박막을 증착하였으며 증착 후 $N_2$ 분위기에서 annealing 하였다. Annealing 후 passivation 효과는 Quasi-Steady-State Photo Conductance를 사용하여 minority carrier의 lifetime을 측정하였다. Capacitance-Voltage measurement, Transmission Electron Microscopy, Ellipsometry를 사용하여 실리콘 산화막의 두께에 따른 $Al_2O_3$ 박막의 passivation 효과를 분석하였다.

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Performances of a-Si:H thin-film solar cells with buffer layers at TCO/p a-SiC:H interface (CO/p a-SiC:H 계면의 버퍼층에 따른 비정질 실리콘 박막태양전지 동작특성)

  • Lee, Ji-Eun;Jang, Ji-Hun;Jung, Jin-Won;Park, Sang-Hyun;Jo, Jun-Sik;Yoon, Kyung-Hoon;Song, Jin-Soo;Kim, Dong-Hwan;Lee, Jeong-Chul
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.32-32
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    • 2009
  • 실리콘 박막 태양전지에서 전면 투명전도막(TCO)은 태양전지의 전기, 광학적 특성을 결정하는 중요한 기능을 한다. ZnO:Al TCO는 기존에 사용되던 $SnO_2:F$와는 비정질 실리콘(a-Si:H) 박막 태양전지의 윈도우 층으로 사용되는 p a-SiC:H와의 일함수(work function) 차이로 인해 접촉전위(contact barrier)를 형성하게 되며 이로 인해 태양전지의 충진율(fill factor)이 $SnO_2:F$에 비해 감소하는 단점을 보인다. 본 연구에서는 ZnO:Al/p a-SiC:H 계면의 접촉전위 발생원인 및 태양전지 충진율 감소현상에 관한 정확한 원인규명을 위해 다양한 특성을 갖는 버퍼층을 삽입하여 계면특성 및 태양전지의 동작특성을 분석하고자 한다.

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Characterization of $Cu(In_xGa_{1-x})Se_2$ Solar Cells with Ga Content (Ga 함량에 따른 $Cu(In_xGa_{1-x})Se_2$ 태양전지의 특성분석)

  • Kim, Seok-Ki;Kwon, Se-Han;Lee, Doo-Yeol;Lee, Jeong-Churl;Kang, Ki-Whan;Yoon, Kyung-Hoon;Ahn, Byung-Tae;Song, Jin-Soo
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1264-1267
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    • 1998
  • $Cu(In_xGa_{1-x})Se_2$ thin films were prepared and characterized with various Ga contents. As the Ga content increased, the grain size of CIGS film became smaller. The 2 $\theta$ values in XRD patterns were shifted to larger values and the overlapped peaks were splitted. The energy bandgap increased from 1.04 to 1.67 eV and the resistivity decreased. The solar cell fabricated with ZnO/CdS/$Cu(In_{0.7}Ga_{0.3})Se_2/Mo$ structure yielded an efficeincy of 14.48% with an acitive area of 0.18 $cm^2$. The efficiency decreased with further increase of Ga content.

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Photovoltaic Properties of Cu(InGa)$Se_2$ Solar Cells with Sputter Conditions of Mo films (Mo 박막의 성장조건에 따른 Cu(InGa)$Se_2$ 박막 태양전지의 광변환효율)

  • Kim, S.K.;Lee, J.C.;Kang, K.H.;Yoon, K.H.;Park, I.J.;Song, J.;Han, S.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.63-66
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    • 2002
  • Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.

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Vibration Analysis of the Large Substrate Handling Robot (8.5G 솔라셀 평판 핸들링 로봇의 진동 제어)

  • Park, Dong Il;Park, Cheolhoon;Park, Chanhun;Kim, Doohyung
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.25 no.6
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    • pp.498-503
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    • 2016
  • Many types of robot systems are used in the mass production line of thin film solar cells and flat panel displays. There are some issues such as the deflection and the vibration of the end-effector because robots handle large and heavy substrates at high speed. Heavy payload and high speed cause much vibration because the end-effector (fork) is made of carbon fiber reinforced polymer because of its light weightiness and sufficient stiffness. This study performs a dynamic simulation of an 8.5G solar cell substrate handling robot, including rigid and flexible bodies and a vibration controller. The fifth polynomial trajectory and the zero vibration derivative input shaping algorithm are applied. The vibration reduction is also proved in the experiments.

Effect of deposition parameters on material properties of sputtered ZnO/Ag backreflectors for n-i-p silicon thin film solar cells (스퍼터링 증착변수에 따른 n-i-p 플렉서블 실리콘 박막 태양전지용 ZnO/Ag 후면전극의 물성 변화)

  • Baek, Sang-Hun;Kim, Kyung-Min;Lee, Jeong-Chul;Park, Sang-Hyun;Song, Jin-Soo;Yoon, Kyung-Hoon;Wang, Jin-Suk;Cho, Jun-Sik
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.390-390
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    • 2009
  • 마그네트론 스퍼터링법을 이용하여 n-i-p 구조의 플렉서블 실리콘 박막태양전지용 ZnO/Ag 후면전극을 stainless steel 기판위에 제조하고 증착온도와 Ag 박막의 두께 변화에 따른 광학적 특성변화를 조사하였다. ZnO/Ag 구조의 후면전극은 RF와 DC 마그네트론 스퍼터링으로 Ag 금속 및 ZnO:Al($Al_2O_3$ 2.5%) 세라믹 타겟을 이용하여 각각 제조하였으며 증착온도는 상온 ${\sim}500^{\circ}C$로, Ag 박막두께는 100 ~ 500 nm로 변화시켰다. 증착조건 변화에 따라 제조된 후면전극의 표면거칠기 및 형상변화를 Atomic Force Mircroscope (AFM)와 Scanning electron miroscopy (SEM)으로 분석하였으며 이에 따른 반사도 변화를 UV-visible-nIR spectrometry 측정을 통하여 조사하였다. 증착온도가 증가함에 따라 Ag 박막의 표면 거칠기는 점차로 증가하였으며 증착된 후면전극의 반사도도 함께 증가함을 알 수 있었다. Ag 박막의 두께 변화에 따른 반사도 변화와 n-i-p 구조의 플렉서블 실리콘 박막태양전지에 미치는 영향을 조사하였다.

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Preparation of CIGSe thin film solar cells by solution process and selenization

  • Park, Mi-Seon;Jo, Hyo-Jeong;Seong, Si-Jun;Hwang, Dae-Gyu;Kim, Dae-Hwan;Gang, Jin-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.410-410
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    • 2011
  • Chalcopyrite계 화합물 $CuInGaSe_2$($CIGSe_2$)는 높은 광흡수율과 전기적 특성 및 안정성, 그리고 1.02~1.67 eV 범위의 최적의 에너지 밴드갭을 가져 박막태양전지용 광흡수층 재료로 많은 관심을 받고 있다. 일반적으로 $CIGSe_2$ 박막태양전지의 광흡수층을 형성하는 공정은 고효율 태양전지 제작이 가능한 진공공정을 이용한다. $CIGSe_2$ 광흡수층을 형성하는데 있어 진공 공정을 용액기반 공정으로 대처한다면 저비용으로 보다 간단하면서 효율적인 태양전지의 제조가 가능 할 것으로 기대된다. 본 연구에서는 $CIGSe_2$ 광흡수층을 2 단계에 걸쳐 제작하였다. 먼저 Cu, In, Ga 성분을 포함하는 용액을 이용하여 CIG 전구체막을 형성한 후, 다음 단계로 selenization 공정을 진행함으로써 $CIGSe_2$ 박막을 제작하였다. $CIGSe_2$의 결정 성장을 위하여 selenization 공정의 열처리 온도와 시간을 조절하여 CIG 전구체막과 Se 원소의 결합반응을 최적화할 수 있는 공정 조건을 확보하였으며 이를 통해 우수한 결정 및 전기적 특성을 갖는 $CIGSe_2$박막을 제조하였다. 제작된 $CIGSe_2$ 박막의 광전변환 효율을 측정하여 단위셀로서의 구현이 가능함을 확인하였으며 XRD, SEM, EDS, UV-visible을 통하여 $CIGSe_2$박막의 특성을 분석하였다.

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Surface Treatment to Inhibit Water-induced Decomposition and δ-phase Formation of Perovskite Thin Films (수분에 의한 페로브스카이트 박막의 분해 및 δ-phase 결정 형성을 억제하기 위한 표면 처리 기술)

  • Son, Kyung Nan;Naqvi, Syed Dildar Haider;Jeong, In Young;Ahn, SeJin;Chang, Hyo Sik
    • Current Photovoltaic Research
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    • v.9 no.2
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    • pp.23-30
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    • 2021
  • Perovskite solar cells (PSCs) are currently attracting attention as a promising source of photovoltaic power generation for their rapid increase in efficiency within a short research period. However, the 2-step deposition method, which has been considered as a proper film fabrication route in commercialization point of view of PSC, requires a complicated control of environment to achieve high efficiency because each step of the process are affected by humidity in different manner. It is clearly a large hurdle for this technic to be transferred to industrialization. In this study, we developed a simple surface treatment by which high quality perovskite films can be fabricated through 2-step deposition method in a relatively wide humidity range without complicated humidity control at each step.

Characteristics of Mo Thin Films Deposited by DC Magnetron Sputtering (DC 마그네트론 스퍼터링 방법에 의해 증착된 Mo 박막의 특성)

  • Kong, Seon-Mi;Xiao, Yubin;Kim, Eun-Ho;Chung, Chee-Won
    • Korean Chemical Engineering Research
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    • v.49 no.2
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    • pp.195-199
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    • 2011
  • Mo thin films were deposited on soda lime glass at room temperature by using DC magnetron sputtering The electrical and structural properties of the films were investigated by varying DC power and gas pressure as the deposition parameter. As DC power increased, the deposition rate of Mo films was increased and the electrical resistivity was decreased. It was observable that the crystallinity of the films was improved with increasing DC power. As gas pressure decreased, the deposition rate and resistivity of the films were decreased, and long rectangular grains were densely formed. With increasing gas pressure, the grains were transformed to a round shape and the voids on the film surface were increased. It was confirmed that the electrical resistivity of Mo films was increased as the amount of oxygen combined with Mo atoms increased. It was also disclosed that the films have low resistivity as the degree of coupling of oxygen with Mo was reduced due to the enhancement of the crystallinity of the films.

Manufacture of Inorganic Materials Thin Film Solar Cell using Titanium Dioxide (이산화티타니움을 사용한 무기질 박막형 태앙전지의 제작)

  • Lee, Kyung-Ho
    • The Journal of the Korea Contents Association
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    • v.9 no.10
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    • pp.451-463
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    • 2009
  • The purpose of this research is to develop thin film materials and fabrication process for efficient $TiO_2$/CdTe solar cells. In this work photocatalyst titanium dioxide was prepared by sol-gel procedure according to reaction condition, the mole ratio of $H_2O$/TTIP, pH of solution and aging condition of powder. The prepared titanium dioxide was thermally treated from 300 to $750^{\circ}C$. Maximum intensity of anatase phase of titanium dioxide was achieved by calcination at $600^{\circ}C$ for 2 hr. And it was mixture of anatase and rutile phase when temperature of calcination was $750^{\circ}C$. It has been known that the properties of synthesized titanium dioxide according to aging time and calcination temperature was converted to anatase phase crystal on increasing of aging time. Also the current density has been increased with aging time and temperature, the efficiency has been increased with because of reason on above results. The formation of chemical bonding on oxygen and cadmium telluride under oxygen circumstances had been observed, and oxygen of thin film surface on cadmium telluride had been decreased with the treatment of chromate and hydrazine. As results had been shown that the energy conversion efficiency of cadmium telluride use by rapidly treatmented heat at the condition of $550^{\circ}C$ under air circumstance got 12.0%, 6.0% values according to $0.07cm^2$, $1.0cm^2$ surface area, respectively.