• Title/Summary/Keyword: Thin-film manufacturing process

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Calculation of Average Thickness of film in Thermoforming by Simulation (시뮬레이션을 통한 열성형에서의 필름 평균두께 계산)

  • Soon-Young Lee;Sun-Kyoung Kim
    • Design & Manufacturing
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    • v.17 no.4
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    • pp.52-56
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    • 2023
  • In this study, numerical simulation of the thermoforming process of PVC film material was performed using PAMForm. For this purpose, tensile tests were performed at various temperatures and the coefficients of the G'Sell model were obtained and used. As a result of the analysis, it was confirmed that the thickness decreased by up to 55% in the section where the film was in contact with the vertical direction and was greatly stretched. If the thickness is excessively thin, the part may become structurally weak, so in the thermoforming process, numerical simulation of the thickness in advance is expected to be helpful in successfully performing the process.

Structural and Electrical Features of Solution-Processed Li-doped ZnO Thin Film Transistor Post-Treated by Ambient Conditions

  • Kang, Tae-Sung;Koo, Jay-Hyun;Kim, Tae-Yoon;Hong, Jin-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.242-242
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    • 2012
  • Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

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A Study of Laser Patterning for $SiO_2$ Thin Film of Crystalline Solar Cells (결정질 태양전지 $SiO_2$ 박막의 Laser Patterning에 관한 연구)

  • Lee, C.S.;Lee, J.C.;Kim, K.S.;Kang, H.S.
    • Laser Solutions
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    • v.14 no.3
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    • pp.1-6
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    • 2011
  • Globally, the interest of renewable energy has become an upsurge. Especially, the solar industry is the one which is getting rapid growth rate. Many of researchers have been undertaking to improve the efficiency of solar cell to accomplish grid parity. The most of research has been concentrated on two methods, one on the selective emitter and the other is on LBSF (Local Back Surface Field) formation. Laser patterning will be needed to eliminate the thin film to form selective emitter and LBSF of solar cell. This paper reports some experimental results in laser patterning process for high-efficiency crystalline solar cell manufacturing. The experimental results indicate that the patterning quality depends on the average power and repetition rate of laser. The experimental results prove that the laser patterning process is an advantageous method to improve the efficiency of solar cell.

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A Study on the Discharge Characteristics and Optimum Activation Conditions of MgO Thin Film in AC POP (AC PDP의 MgO 활성화 조건과 그 방전 특성에 관한 연구)

  • Kim, Young-Kee;Kim, Suk-Ki;Park, Byung-Yun;Park, Myung-Joo;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1758-1760
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    • 1998
  • MgO Protecting layer in AC PDP prevents ion bombardment in discharge plasma. The MgO layer also has the additional importance in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protecting layer is mainly prepared by E-beam Evaporation. However, the optimum activation manufacturing process of MgO thin film wasn't well known. Therefore in this study, after MgO protecting layer is prepared on dielectric layer by E-beam evaporation and liquid MgO spin coating, we carried out activation process of MgO thin film as a parameter of Temperature, Operating time and Operating pressure. In addition, discharge characteristics are also studied as a parameter of activation conditions.

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FOS improvement through the growth speed increase of A-Si layer in TFT process

  • Kim, Pyung-Hun;Kang, I.B.;Lee, Eui-Wan;Jung, Ji-Man;Gil, W.S.;Lee, Hyung-Gi;Lee, Y.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1040-1043
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    • 2004
  • As time goes by, the market demand increases and each LCD panel manufacturing company makes every effort to produce more panels in a limited time. It is necessary to reduce the cost and time of production for the improvement of productivity in manufacturing companies. The increased speed of thin films growth used in the TFT process brings improvement of productivity but it is also accompanied by a drop in display quality due to a characteristic change of the thin film. So in our dissertation, we deal with the increased speed of a-Si layer growth and the proportioned a drop in characteristic quality. We discuss a drop in display quality by a characteristic change of a-Si layer and we propose a counter-plan through panel design improvement. We have already applied our plan to the 15" XGA panel and confirmed the improved result.

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Room temperature operating nitrogen dioxide sensor based tellurium thin films (Te를 이용한 상온 동작형 NO2 센서 제작 및 감응 특성)

  • Shin, Han-Jae;Song, Kap-Duk;Joo, Byung-Su;Sohn, Myoung-Ho;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.91-96
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    • 2007
  • The characteristic of tellurium thin films was studied for detecting nitrogen dioxide gas at room temperature. The film was deposited on $Al_{2}O_{3}$ substrate by using thermal evaporator. The subsequent process was heat treatment by several conditions. (temperature, flowed gases) Surface and grain boundary was investigated using SEM. The results showed that resistance of the tellurium film decreases reversibly in the presence of nitrogen dioxide. The sensitivity of this device depends on the gas concentration and detect lower concentrations less than 10 ppm.

Characteristics of a PZT-Driven Micro Depth Adjustment Device for Cutting Coated Film (박막 절단용 PZT 구동 미세깊이 조절 장치의 특성)

  • Ryu, Sang-Oh;Kim, Hwa-Young;Ahn, Jung-Hwan
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.6
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    • pp.630-635
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    • 2014
  • This study aims to develop a PZT-driven depth adjustment device with a flexure hinge and to investigate its static/dynamic characteristics. This device will be applied to rapidly and accurately trace a flat surface with slight waviness of up to several hundreds of micrometers in magnitude. One typical example is to cut a film coated on a steel plate. A depth control system composed of PMAC, PZT/PZT amplifier, flexure hinge/knife, and laser displacement sensor is implemented on a desktop three-axis machine and an actual cutting test is conducted on a steel workpiece with a sinusoidal-wavy surface. It is verified that the dynamic characteristics of the device limit the maximum cutting speed and depth precision.

Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

  • Kim, No-Hyu;Lee, Sang-Soon
    • Journal of the Korean Society for Nondestructive Testing
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    • v.23 no.6
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    • pp.577-582
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    • 2003
  • This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process.

Development of Direct Surface Forming Process

  • Cho, Kwang-Hwan;Yoon, Kyung-Hwan
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.04a
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    • pp.73-77
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    • 2003
  • The backlight unit(BLU) is used as a light source of TFT liquid-crystalline-display (TFT-LCD) module. In this backlight unit, one of important components is the light guide, which is usually made of transparent polymers. Currently the screen-printing method is mainly used for the light guide as a manufacturing process. However, it has limitation to the flexibility of three-dimensional optical design. In the present paper a new alternative manufacturing method for the light guide with low-cost is proposed. This manufacturing method is named as direct surface forming (DSF), which is very similar to the well-known hot embossing except for partial contact between mold and substrate. The results of this new manufacturing method are presented in terms of processing condition, dimensional accuracy, productivity, etc.

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Development of Spray Thin Film Coating Method using an Air Pressure and Electrostatic Force (공압과 정전기력을 이용한 스프레이 박막 코팅 기술 개발)

  • Kim, Jung Su;Kim, Dong Soo
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.6
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    • pp.567-572
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    • 2013
  • In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.