• 한국염색가공학회지
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• 제29권3호
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• pp.139-147
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• 2017

In this study, interesting area of development is retro-reflective thin film and then slitting to form retro-reflective material to be conbined with other fibers to form having retro-reflective characteristics, which slitting yarn can then be to provide fabrics. Glass beads are microscopic spherical size with diameters ranging from several microns to several millimeters. Applying the effects of optical property, glass beads are consumed for road safety used to make traffic signs, safety clothing and others. Glass beads retro-reflective films can be turned into slit yarns through slitting yarn process. The slit yarns can be combined into textiles using diverse methods such as weaving to provide a fabric having retro-reflective characteristics. Lightness and Luminance was increased with decreasing of interval of slit yarn in the fabric. Also, the hue is shifted greenish and bluish with interval of slit yarn.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2005년도 춘계학술대회 논문집
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• pp.395-400
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• 2005

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• 한국산학기술학회논문지
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• 제17권11호
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• pp.635-639
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• 2016

초고주파 대역에서 사용하는 소자들은 기생성분으로 인하여 주파수가 증가함에 따라 이득이 감소한다. 이러한 특성을 보상하기 위해 전자전과 같은 광대역 시스템에서는 반대의 기울기를 갖는 선형 이득 등화기가 필요하다. 본 논문에서는 18~40GHz 대역에서 사용할 수 있는 선형 이득 등화기를 설계하고 제작하였다. 설계와 제작의 오차를 줄이기 위하여 회로설계와 모멘텀 설계를 진행하였다. 구현 주파수 대역 내에서 가능한 기생성분을 최소화하기 위해 thin film 공정을 사용하였으며, 박막저항의 길이에 의한 파장 변화를 최소화하기 위해 100 ohm/square의 sheet resistance로 설계하였다. 본 선형 이득 등화기는 직렬 마이크로스트립 라인에 사분의 일 파장을 갖는 공진기를 저항으로 결합하는 구조이다. 모두 3개의 1/4 파장의 Short 공진기를 사용하였다. 제작된 선형 이득 등화기는 40GHz에서 -5dB 이상의 손실을 가졌으며, 18 ~ 40 GHz 대역에서 6dB 기울기를 나타내었다. 제작된 이득 등화기를 전자전 수신기와 같은 광대역 MMIC들이 다단으로 연결된 장치 내부에 사용한다면 주파수가 증가에 따른 이득 평탄도 악화를 감소시킬 수 있을 것이다.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.54-54
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• 2010

In this study, the correlation between temperature and the gel-content of the module were analyzed through experiments. Amorphous thin-film solar cell used in this experiment has a visible light transmission performance of 10%. In addition, ethylene vinyl acetate(EVA) film and the clear glass have been used for the modulation. The most important process is to laminate the module in the manufacturing process of BIPV(Building integrated photovoltaic) module. Setting parameters of laminator in the lamination process are temperature, pressure and time. Setting conditions significantly affect the durability, watertightness and airtightness of module. The most important factor in the setting parameters is temperature to satisfy the gel-contents. The bottom and top surface temperature of module are measured according to setting temperature of laminator. The results showed $145^{\circ}C$ of max temperature of the bottom surface and $128^{\circ}C$ of max temperature of top surface on the module at the temperature condition of $160^{\circ}C$. And at the another temperature condition of laminator with $150^{\circ}C$, the max temperature do bottom and top are $117^{\circ}C$ and $134^{\circ}C$ respectively. The temperature difference between bottom and top of the module occurred, that is because heat has been blocked by the clear glass and the bottom of the cells absorb the heat from the laminator. In this particular, the temperature difference between setting temperature of the laminator and the surface temperature of the module showed $15^{\circ}C$, because the heat of laminator plate is transferred to the surface of the module and heat is lost at this time. As a results, gel-content showed 94.8%, 88.7% and 81.7% respectively according to the setting temperature $155^{\circ}C$, $150^{\circ}C$ and $145^{\circ}C$ of the laminator. In conclusion, the surface temperature of module increases, the gel-contents is relatively increased. But if the laminator plate temperature is too high, the gel-content shows rather decline in performance. Furthermore, the temperature difference between setting temperature and the surface temperature of the module is affected by laminating machine itself and the temperature of module should be considered when setting the laminator.

• 한국공작기계학회논문집
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• 제14권2호
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• 열처리공학회지
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• 제30권1호
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• pp.13-16
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• 2017

$SnO_2$ single layer films and 2 nm thick Ni thin film intermediated $AZO/Ni/SnO_2$ trilayer films were deposited on glass substrate at room temperatures by RF and DC magnetron sputtering and then the optical and electrical properties of the films were investigated to enhance opto-electrical performance of $SnO_2$ single layer films. As deposited $SnO_2$ films show the optical transmittance of 81.8% in the visible wavelength region and a resistivity of $1.2{\times}10^{-2}{\Omega}cm$, while $AZO/Ni/SnO_2$ films show a lower resistivity of $5.8{\times}10^{-3}{\Omega}cm$ and an optical transmittance of 77.1% in this study. Since $AZO/Ni/SnO_2$ films show the higher figure of merit than that of the $SnO_2$ single layer films, it is supposed that the $AZO/Ni/SnO_2$ films can assure high opto-electrical performance for use as a transparent conducting oxide in various display applications.

• 한국기계가공학회지
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• 제18권4호
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• pp.100-108
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• 2019

In this paper, a new stacked element pressure sensor has proposed for heartbeat and respiration measurement. This device can be directly attached to an individual's chest; heartbeat and respiration are detected by the pulsatile vibration and deformation of the chest. A key feature of the device is the simultaneous measurement of heart rate and respiration. The structure of the sensor consists of two stacked elements, in which one element includes one polyvinylidene fluoride (PVDF) thin film bonded on polydimethylsiloxane (PDMS) substrate. In addition, for the measurement and signal processing, the electric circuit and the filter are simply constructed with an OP-amp, resistance, and a capacitor. One element (element1, PDMS) maximizes the respiration signal; the other (element2, PVDF) is used to measure heartbeat. Element1 and element2 had sensitivity of 0.163V/N and 0.209V/N, respectively, and element2 showed improved characteristics compared with element1 in response to force. Thus, element1 and element2 were optimized for measuring respiration heart rate, respectively. Through mechanical and vivo human tests, this sensor shows the great potential to optimize the signals of heartbeat and respiration compared with commercial devices. Moreover, the proposed sensor is flexible, light weight, and low cost. All of these characteristics illustrate an effective piezoelectric pressure sensor for heartbeat and respiration measurements.

• 대한기계학회논문집A
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• 제35권9호
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• pp.1015-1020
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• 2011

최근, MEMS/NEMS 기술을 이용하여 기능성 나노 구조물을 제작하기 위한 공정기술 중에, 마스터 스템프에 형성된 나노패턴을 웨이퍼 등에 복제할 수 있는 나노임프린트 리소그래피 기술이 활발히 연구되고 있다. 본 연구에서는 기존 멀티헤드방식 나노임프린팅 장비에서 사용되던 전동모터를 대신하여 플렉셔 메커니즘과 결합된 나노스템프를 구동하기 위한 사각 형상의 중공형 압전액추에이터를 설계, 제작하였으며, 제조공정이 다른 각각의 시제품의 변위, 발생력 및 응답특성에 관한 검토를 수행한다. 또한, 압전 액추에이터의 변위제어에 대한 제어수법을 간단히 소개하였으며, 제작한 프로토타입의 PI제어기에 의한 변위 제어결과를 소개한다.