• 한국정보전자통신기술학회논문지
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• 제16권1호
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• pp.8-17
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• 2023

기존 liquid crystal display(LCD) 공정에서 Indium Tin Oxide(ITO) 투명전극과 폴리이미드 배향막의 러빙 공정은 액정을 정렬하고 전계를 인가하기 위하여 필수적인 공정이다. 하지만 ITO의 증착은 높은 진공을 요구하며, 러빙 공정은 정전기에 의해 소자가 손상될 수 있는 단점이 존재한다. 본 논문에서는 기존 ITO 투명전극을 대체하기 위하여 PEDOT:PSS와 Multi-wall carbon nanotube(MWNT)를 혼합하여 PEDOT:PSS 나노복합체를 제조하고, 러빙 공정을 대체하기 위하여 나노 주름 구조 몰드를 통한 나노임프린팅을 통하여 박막을 형성함으로써 기존 액정 디스플레이의 투명전극과 배향막 두 가지 박막을 PEDOT:PSS/MWNT 나노복합체 박막 하나만으로 기능하게 하여 공정을 단순화 하였다. 전사된 나노 주름을 따라 액정이 잘 배향됨을 확인하였으며, 이를 기반으로 만들어진 액정 셀에서 박막 내 MWNT의 함량이 높아질수록 박막의 전기전도도가 증가하여 낮은 구동 전압과 빠른 응답 속도를 갖는다는 것을 확인하였다. 본 연구를 통해 공정 단순화와 용액공정에 의한 공정 단가 절감, 기존 러빙 공정의 단점을 해결하는데 기여 할 수 있을 것으로 기대된다.

• 센서학회지
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• 제27권4호
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• pp.269-274
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• 2018

High-sensitivity signal-to-noise ratio (SNR) microphones are essentially required for a broad range of automatic speech recognition applications. Piezoelectric microphones have several advantages compared to conventional capacitor microphones including high stiffness and high SNR. In this study, we designed a new piezoelectric membrane structure by using the finite elements method (FEM) and an optimization technique to improve the sensitivity of the transducer, which has a high-quality AlN piezoelectric thin film. The simulation demonstrated that the sensitivity critically depends on the inner radius of the top electrode, the outer radius of the membrane, and the thickness of the piezoelectric film in the microphone. The optimized piezoelectric transducer structure showed a much higher sensitivity than that of the conventional piezoelectric transducer structure. This study provides a visible path to realize micro-scale high-sensitivity piezoelectric microphones that have a simple manufacturing process, wide range of frequency and low DC bias voltage.

• Korea-Australia Rheology Journal
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• 제19권3호
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• pp.171-176
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• 2007

LCD-BLU (Liquid Crystal Display-Back Light Unit) of medium size is usually manufactured by forming numerous dots with $50{\sim}300\;{\mu}m$ in diameter by etching process and V-grove shape with $50\;{\mu}m$ in height by mechanical cutting process. However, the surface of the etched dots is very rough due to the characteristics of the etching process and V-cutting needs rather high cost. Instead of existing optical pattern made by etching and mechanical cutting, 3-dimensional continuous micro-lens of $200\;{\mu}m$ in diameter was applied in the present study. The continuous micro-lens pattern fabricated by modified LIGA with thermal reflow process was tested to this new optical design of LGP. The manufacturing process using LIGA-reflow is made up of three stages as follows: (i) the stage of lithography, (ii) the stage of thermal reflow process and (iii) the stage of electroplating. The continuous micro-lens patterned LGP was fabricated with injection molding and its test results showed the possibility of commercial use in the future.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• 한국재료학회지
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• 제34권3호
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

• 공업화학
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• 제21권6호
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• pp.694-696
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• 2010

용액공정을 이용하여 표면에 알킬기를 도입하고, 붕소(boron) 또는 인(phosphorous)으로 도핑된 실리콘 나노 입자를 합성하였다. 나노 입자의 합성 여부 및 입자크기는 핵자기공명분광기(NMR), 적외선분광기(FT-IR), 자외선가시광선분광기(UV-Vis), 인광분광기(PL)를 이용하여 분석하였다. 마이크로웨이브 소결기를 이용하여 표면의 알킬기를 제거하고, 결정성을 갖는 필름을 제작하였다. 필름의 조각은 $200{\mu}m$ 정도의 크기를 가지며 큐빅구조를 가지고 있다는 것을 전자주사현미경(FE-SEM)과 투과전자현미경(FR-TEM)으로 확인할 수 있었다. 필름의 전도도는 도핑 타입을 통해 조절할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• International Journal of Precision Engineering and Manufacturing
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• 제7권1호
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• pp.51-56
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• 2006

A computer code was developed to simulate both the thermal stresses introduced during the post-filling stage and the in-plane deformation after ejection process by finite element method based on the plane stress theory. The computer simulation was applied to the mold design of a 2 inch light guide plate (LGP) for thin film transistor (TFT)-liquid crystal displays (LCD). With injection molding experiments based on the design of experiments (DOE) technique, the influences of the processing conditions in injection molding on brightness and uniformity of the LGP were investigated, and the optimal processing parameters were selected to increase the brightness and uniformity. The verification experiment showed that the brightness and uniformity of the LGP were increased dramatically under the selected optimal processing conditions.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.269-274
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• 2004

As next generation display, TFT LCD gets into the spotlight, and the bigger glass size is required. Currently, its display size is 1500 mm by 1870 mm at the six generation comparing with 300mm by 400 mm at the first one and the size is increasing continuously, which cause the difficulties to apply the cleaning operation including the general brush cleaning. In this study, water-jet cleaning operation has been introduced, which spent the less water them other cleaning methods. Throughout the experiment, is has been found the possible damage of the declined cell and the variation of the tilt bias angle depending upon the increasing time. In addition, the simulation predicts the glass bending of the display.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1629-1631
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• 2007

Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.