• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1590-1592
• /
• 2002

In this work the electrical characteristics of organic TFTs using organic insulator and flexible polyester substrate have been investigated. Pentacene and PVP(polyvinylphenol) are used as an active semiconducting layer and dielectric layer respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $1{\times}10^{-6}$ Torr and at a deposition rate of $0.5{\AA}$/sec, and PVP was spin-coated. Aluminium and gold were used for gate and source/drain electrodes. 0.1mm thick flexible polyester substrate was used instead of glass or silicon wafer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.294-294
• /
• 2010

Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.71-72
• /
• 2000

The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the mutual coupling capacitances present in a pixel. The mutual coupling capacitance causes a pixel voltage error. In this study, semi-empirical model, which is adopted from VLSI interconnection capacitance calculations, is used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and arbitrary given image pattern, the root mean square (RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained this study can be utilized to design the larger area and finer image quality panel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.428-431
• /
• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.68.2-68.2
• /
• 2012

We present a scheme for monolithically integrating aligned arrays of single walled carbon nanotubes (SWNTs) with sheets of graphene, for use in electronic devices. Here, the graphene and arrays of SWNTs are formed separately, using chemical vapor deposition techniques onto different, optimized growth substrates. Techniques of transfer printing provide a route to integration, yielding two terminal devices and transistors in which patterned structures of graphene form the electrodes and the SWNTs arrays serve as the semiconductor. Electrical testing and analysis reveal the properties of optically transparent transistors that use this design, thereby giving insights into the nature of contacts between graphene and SWNTs.

• Korean Journal of Materials Research
• /
• v.16 no.7
• /
• pp.449-454
• /
• 2006

Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of $200^{\circ}C$ by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about $5.8{\times}10^{-4}{\Omega}$ cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1118-1121
• /
• 2009

We have fabricated inverted staggered pentacene Thin Film Transistor (TFT) with 1-${\mu}m$ channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro-scale source/drain electrodes without etching was successfully achieved using silver nano particle ink, Polydimethylsiloxane (PDMS) stamp and FC-150 flip chip aligner-bonder. Sheet resistance of the printed Ag nano particle films were effectively reduced by two step annealing at $180^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.243-246
• /
• 1999

The displacement current measuring system used for detecting the dynamic behavior of monolayers at the air-water interface is described. It basically consists of a film balance, a pair of electrodes connected to each other through a sensitive ammeter. Here, one electrode is suspended in air and the other electrode is the water, With Maxwll-displacement-current-measuring method, the phase transitions of Poly(λ-benzyl- L-glutamate)(PBLG) on a water surface were detected, Displacement currents generated during the compression of monolayers of PBLG on the surface of water were investigated. As results, the displacement pick was generated when the area per molecule was about 15 $\AA$$^{2}$ in low pressure, and tit was generarted when the area per molecule about 27$\AA$$^{2}$ in high pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.557-560
• /
• 1999

The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the parasitic capacitive elements present in a pixel. The capacitive coupling of the data line signal onto the pixel causes a pixel voltage error. In this study semi-empirical capacitance model which is adopted from VLSI interconnection capacitance calculations was used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and given image pattern, the root mean square(RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.339-343
• /
• 1999

This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using $SiH_4\; and\; Si_2H_6$ as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using $Si_2H_6$ with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics.