• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.57-60
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• 1998

Lean zirconate titanate (PZT) is an attractive material for the memory device applications. We have investigated Pt and{{{{ { RuO}_{2 } }}}} as a botton electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. The substrate temperature influenced the resistivity of Pt and {{{{ { RuO}_{2 } }}}} a s well as the film crystal structure. XRD examination shows that a preferred(111) orientations for the substrate temperature of 30$0^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of 30$0^{\circ}C$ for the bottom electrode growth. We investigated and anneal temperature effect because Perovskite PZT structure is recommended for the memory device applications and the structural transformation is occurred only after and elevated heat treatment. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Rt and {{{{ { RuO}_{2 } }}}} w as decreased. Surface morphology was observed by AFM as a function of post anneal temperature.

• 전자공학회논문지D
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• 제35D권1호
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• pp.72-78
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• 1998

Polarization mode converters have been produced by utilizing Ti:LiNbO$_{3}$ channel waveguide and strain-optic effect. Shear strain for periodic perturbations of optical channel waveguides and phase matching can be obtained by an evaporated periodic SiO$_{2}$ thin film at 300.deg. C. The electrodes located on the either side of waveguide provide a means to electro-optically tune the wavelength for maximum polarization conversion via the electrooptic effect. The maximum conversion effeciency was observed at 21.deg. C for V=0 and 46.deg. C for V=30V aro the device having 7 .mu.m waveguide wiith and 350 periodic pads. The dependence of the number of pads on conversion efficiency was observed experimentally.fficiency was observed experimentally.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.92-94
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• 2003

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials, the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed-temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.443-445
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• 2008

We have fabricated vertical type organic thin film transistor using $C_{60}$ as a n-type active material to improve the problems of conventional OTFTs. In general, it can be argued that the characteristics of organic transistor were influenced by carrier mobility and density. We have used several kinds of metals as source and gate electrodes to optimize the device characteristics using $C_{60}$. In addition, we have examined the feasibility of fabrication of organic light-emitting transistor (OLET) using MEH-PPV as an emission layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1413-1415
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• 2005

The OTFT performance depends strongly on the interfacial properties between an organic semiconductor and ${\alpha}$ metal electrode. The contact resistance is critical to the current flow in the device. The contact resistance arises mainly from the Schottky barrier formation due to the work function difference between the semiconductor and electrodes. We doped pentacene/source-drain interfaces with $F_4TCNQ$ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane), resulting in p-doped region at the SD contacts, in order to solve this problem. We found that the mobility increased and the threshold voltage decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.128-131
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• 2002

연성 AI 전극을 이용하여 플라스틱 기판 위에 대칭성 박막 다이오드를 제작하였다. 다이오드의 구조는 $Al/Ta_{2}O_{5}/Al$의 3층 구조로 되어 있다 상부 AI 전극 제작시 하부 AI 전극의 손상을 방지하기 위해 무(無)식각 공정을 개발, 적용하였다. AI 전극을 사용한 결과 단단한 Ta 전각에서 나타난 변형 빛 균열 문제가 해결되었다. 또한 상부 빛 하부의 대칭성 전극 구조로 제작함으로써 I-V 곡선이 완벽한 대칭형의 우수한 전기적 특성을 얻을 수 있었다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.3-6
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• 2002

In this paper, Thin film bulk acoustic resonate.(TFBAR) fillers tuned by gold plated on-wafer inductors are presented. The air-gap type TEBAR is used with aluminum nitride(AIN) as piezoelectric material and platinum as top and bottom electrodes. Inductor equivalent model and modified Butterworth-Van Dyke(MBVD) model are employed for the frequency tuning of fabricated TFBAR bandpass filters. Fabricated inductor has inductance of 3 nH and Q factor of about 8 at 2 ㎓. It is clearly revealed that inductor tuning can enhance the bandwidth of ladder filters and improve out-of-band rejection characteristic around 10㏈.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.561-563
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• 2012

In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.