Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1998.06a
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- Pages.57-60
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- 1998
Structural Investigations of $RuO_2$ and Pt ad Films fir the Applications of memory Devices
- S. M. Jung (School of Electrical and Engineering, SungKyunkwan university) ;
- Park, Y. S. (School of Electrical and Engineering, SungKyunkwan university) ;
- D. G. Lim (School of Electrical and Engineering, SungKyunkwan university) ;
- Park, Y. (School of Electrical and Engineering, SungKyunkwan university) ;
- J. Yi (School of Electrical and Engineering, SungKyunkwan university)
- Published : 1998.06.01
Abstract
Lean zirconate titanate (PZT) is an attractive material for the memory device applications. We have investigated Pt and{{{{ { RuO}_{2 } }}}} as a botton electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. The substrate temperature influenced the resistivity of Pt and {{{{ { RuO}_{2 } }}}} a s well as the film crystal structure. XRD examination shows that a preferred(111) orientations for the substrate temperature of 30
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