• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.287-291
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• 2005

We have investigated and tried to improve the characteristics of the thin $HfO_2$ layer deposited by ALD for fabricating a MOSFET device where the $HfO_2$ film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the $HfO_2$ dielectric layer with thickness of $5\~6\;nm$ has been deposited. Then the $HfO_2$ film was annealed with $1\~20\;atm\;H_2$ gas and subsequently aluminum electrodes was made so that the active area was $5{\times}10^{-5}\;cm^2$. We have found out that the drain current and transconductance increased by $5\~10\%$ when the $H_2$ gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.

• Smart Structures and Systems
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• v.12 no.1
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• pp.55-71
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• 2013

Structural health monitoring (SHM) is vital for detecting the onset of damage and for preventing catastrophic failure of civil infrastructure systems. In particular, piezoelectric transducers have the ability to excite and actively interrogate structures (e.g., using surface waves) while measuring their response for sensing and damage detection. In fact, piezoelectric transducers such as lead zirconate titanate (PZT) and poly(vinylidene fluoride) (PVDF) have been used for various laboratory/field tests and possess significant advantages as compared to visual inspection and vibration-based methods, to name a few. However, PZTs are inherently brittle, and PVDF films do not possess high piezoelectricity, thereby limiting each of these devices to certain specific applications. The objective of this study is to design, characterize, and validate piezoelectric nanocomposites consisting of zinc oxide (ZnO) nanoparticles assembled in a PVDF copolymer matrix for sensing and SHM applications. These films provide greater mechanical flexibility as compared to PZTs, yet possess enhanced piezoelectricity as compared to pristine PVDF copolymers. This study started with spin coating dispersed ZnO- and PVDF-TrFE-based solutions to fabricate the piezoelectric nanocomposites. The concentration of ZnO nanoparticles was varied from 0 to 20 wt.% (in 5 % increments) to determine their influence on bulk film piezoelectricity. Second, their electric polarization responses were obtained for quantifying thin film remnant polarization, which is directly correlated to piezoelectricity. Based on these results, the films were poled (at 50 $MV-m^{-1}$) to permanently align their electrical domains and to enhance their bulk film piezoelectricity. Then, a series of hammer impact tests were conducted, and the voltage generated by poled ZnO-based thin films was compared to commercially poled PVDF copolymer thin films. The hammer impact tests showed comparable results between the prototype and commercial samples, and increasing ZnO content provided enhanced piezoelectric performance. Lastly, the films were further validated for sensing using different energy levels of hammer impact, different distances between the impact locations and the film electrodes, and cantilever free vibration testing for dynamic strain sensing.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.373-378
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• 2015

The structure of the human ear is divided into the outer ear, the middle ear, and the inner ear. The inner ear includes the cochlea that plays a very important role in hearing. Recently, the development of an artificial cochlear device for the hearing impaired with cochlear damage has been actively researched. Research has been carried out on the biomimetic piezoelectric thin film ABM (Artificial Basilar Membrane) in particular. In an effort to improve the frequency separation performance of the existing piezoelectric thin film ABM, this paper presents the design, fabrication, and characterization of the production and performance of a partially etched-type ABM material. $O_2$ plasma etching equipment was used to partially etch a piezoelectric thin film ABM to make it more flexible. The mechanical-behavior characterization of the manufactured partially etched-type ABM showed that the overall separation frequency range shifted to a lower frequency range more suitable for audible frequency bandwidths and it displayed an improved frequency separation performance. In addition, the maximum magnitude of the vibration displacement at the first local resonant frequency was enhanced by three times from 38 nm to 112 nm. It is expected that the newly designed, partially etched-type ABM will improve the issue of cross-talk between nearby electrodes and that the manufactured partially etched-type ABM will be utilized for next-generation ABM research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.73-76
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• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current. then manufacture a device under the accumulation condition that the state surface pressure is 15[mN/m]. In processing of a device manufacture. We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au, the number of accumulated layers are 31,35, and 41. I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

• Proceedings of the KIEE Conference
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• 1999.11a
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• pp.31-34
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• 1999

In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.303-310
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• 2010

We fabricated $La_{0.6}Sr_{0.4}MnO_3$ thin films using radio frequency (RF) magnetron sputtering. They were grown on sapphire substrates with various deposition conditions. After the growth of the $La_{0.6}Sr_{0.4}MnO_3$ thin films, they were annealed at various temperatures to be crystallized. We successfully fabricated single phase $La_{0.6}Sr_{0.4}MnO_3$ thin films with high electrical conductivity. The room temperature resistivity was $1.5{\times}10^{-2}{\Omega}{\cdot}cm$. It can be considered that $La_{0.6}Sr_{0.4}MnO_3$ thin films are one of the feasible candidates for electrodes for integrated device applications.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.275-278
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• 2001

Ferroelectric PZT thin films were fabricated on the RuO$_2$/Pt, Pt bottom electrode with a PZT(53/47) metal alkoxide solutions. All PZT thin films showed a uniform grain structure without the presence of rosette structure. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%)/Ar(20%). The etch rates of PZT thin films were 1970 ${\AA}$/min at 30 % additive CF$_4$ into Cl$_2$(80%)/Ar(20%). The remanent polarization and leakage current density in PZT thin film on the RuO$_2$/Pt were 64.2 ${\mu}$C/cm$^2$, 1.4${\times}$10$\^$-6/ respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1361-1363
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• 2005

In this paper, we report on the performance stability of solution processible OTFT devices with Au/Ti and ITO source-drain (S/D) electrodes. It appears that the contact resistance of the S/D electrode strongly affects the stability of OTFT devices. Interestingly, the devices with the Au/Ti electrode showed lower mobility than those with the ITO (S/D) devices. The field effect mobilities of the devices with the Au/Ti and ITO electrodes were 0.06, and $0.44cm^2/Vs$, respectively. However, the mobility of the device with the Au/Ti electrode was increased up to $0.26cm^2/Vs$ after 2 weeks, while the mobility of the device with ITO electrode was slightly decreased down to $0.41cm^2/Vs$. The experimental data show us that ITO could be used as the S/D electrode for low-cost OTFT devices.