• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.747-750
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.568-570
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• 2009

Octadecyltrichlorosilane (OTS) self-assembled monolayer was selectively patterned by deep ultraviolet exposure, resulting in differential surface state, hydrophilic area with OTS hydrophobic surroundings. High-resolution (<10 ${\mu}m$) nanoparticulate Ag electrodes and organic semiconductors were patterned from simple dip-casting and ink-jetting on the pre-patterned hydrophilic surface, forming all solution-processed organic thin film transistors. The devices typically have shown a mobility of 0.065 $cm^2/V{\cdot}s$ and on-off current ratio of $8{\times}10^5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.491-494
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• 1999

We have examined the electrical properties of arachidic acid Langmuir (L) films by using a displacement current measuring technique with pressure stimulation. We give pressure stimulation into organic thin films and detect the Induced displacement current. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are 17, 19 and 21. Also, we then examined of the MIM device by means of I-V The I-V characteristic of the device is measured from 0 to +1[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Journal of the Korean Electrochemical Society
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• v.7 no.4
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• pp.173-178
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• 2004

Silicon thin film were synthesized from silane and argon gas mixture directly on copper foil by rf PECVD and then lithium ion batteries were prepared from them employed as the negative electrodes without any further treatment. In the present study, two different kinds of silicon thin films, amorphous silicon and copper silicide were prepared by changing deposition temperature. Amorphous silicon film was prepared below $200^{\circ}C$, but copper silicide film with granular shape was formed by the reaction between silicon radical and diffused copper ions under elevating temperature above $400^{\circ}C$. The amorphous silicon film gives higher capacity than copper silicide, but the capacity decreases sharply with charge-discharge cycling. This is possibly due to severe volume changes. The cyclability is improved, however, by employing the copper silicide as a negative electrode. The copper silicide plays an important role as an active material of the electrode, which mitigates volume change cause by the existence of silicon and copper chemical bonding and provides low electrical resistance as well.

• Rapid Communication in Photoscience
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• v.2 no.3
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• pp.79-81
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• 2013

A novel method of fabricating polythiophene-gold nanoparticle composite film electrodes for photoelectric conversion is demonstrated. The method includes electrodeposition of gold and electropolymerization of 2,2'-bithiophene onto an indium-tin-oxide (ITO) electrode. First, electrodeposition of gold onto the ITO electrode was carried out with various repetition times of pulsed applied potential (0.25 s at -2.0 V vs. Ag/AgCl) in an aqueous solution of $HAuCl_4$. Significant progress of the number density of deposited gold nanoparticles was confirmed from scanning electron micrographs, from 4 (1 time) to 25% (15 times). Next, electropolymerization of 2,2'-bithiophene onto the above ITO electrode was performed under controlled charge condition (+1.4 V vs. Ag wire, 15 $mC/cm^2$). Structural characterization of as-fabricated films were carried out by spectroscopic and electron micrographic methods. Photocurrent responses from the sample film electrodes were investigated in the presence of electron acceptors (methyl viologen and oxygen). Photocurrent intensities increased with increasing the density of deposited gold nanoparticles up to ~10%, and tended to decrease above it. It suggests that the surplus gold nanoparticles exhibit quenching effects rather than enhancement effects based on localized electric fields induced by surface plasmon resonance of the deposited gold nanoparticles.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Journal of the Korean Applied Science and Technology
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• v.31 no.3
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• pp.402-407
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• 2014

Herein, we describe the effect of the cooling-off condition of a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) film on its molecular distribution and the resultant electrical properties. Since the solvent in a TIPS-pentacene droplet gradually evaporates from the rim to the center exhibiting a radial form of solute, for a quenched case, domains of the TIPS-pentacene film are aboriginally spread showing original features of radial shape due to suppressed molecular rearrangement during the momentary cooling period. For the slowly cooled case, however, TIPS-pentacene molecules are randomly rearranged during the long cooling period. As a result, in the lopsided electrodes structure proposed in this work, the charge transport generates more effectively under the case for radial distribution induced by the quenching technique. It was found that the molecular redistribution during the cooling-period plays an important role on the magnitude of the mobility in a solution-processed organic transistor. This work provides at least a scientific basis between the molecular distribution and electrical properties in solution-processed organic devices.