• Title/Summary/Keyword: Thin-film electrodes

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High Temperature Ohmic Contacts to Monocrystalline $\beta$-SiC Thin Film Using Nitride Thin Films (질화물 박막을 이용한 단결정 $\beta$-SiC의 고온 ohmic 접촉 연구)

  • Choe, Yeon-Sik;Na, Hun-Ju;Jeong, Jae-Gyeong;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.21-28
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    • 2000
  • Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

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Voltage-Current Properties of Polyimide use Electrical Power Installation (전력설비용 Polyimide의 전압-전류특성)

  • 전동규;이경섭
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1998.11a
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    • pp.112-115
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    • 1998
  • We investigate the qualities of organic materials by which can manufacture organic thin films for solar cells and make thin films for insulation layers of an insulated cable. We give pressure stimulation into organic thin films and detect the induced displacement current. In processing of a device manufacture, We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au and I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

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Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Analysis on the Field Effect Mobility Variation of Tin Oxide Thin Films with Oxygen Partial Pressure (산소 분압에 따른 산화주석 박막의 전계효과 이동도 변화 분석)

  • Ma, Tae Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.6
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    • pp.350-355
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    • 2014
  • Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

Ferroelectric Properties of SBT Thin Film by RF Sputtering (RF 스퍼터링법에 의한 SBT박막의 강유전체 특성)

  • 김태원;오열기;김원종;조춘남;김진사;최운식;김충혁;심상흥;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.217-220
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    • 2000
  • The SrBi$_2$Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite phase was crystallized to 650[。 and Bi-layered perovskite phase was crystallize ed above 700[$^{\circ}C$]. The maximum remnant polarization and the coercive electric field is 11.73[${\mu}$C/$\textrm{cm}^2$], 85[kV/cm] respectively at annealing temperature of 750[$^{\circ}C$]. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 10$\^$10/ switching cycles.

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Deposition of Piezoelectric PZT(53/47) Film by Metalorganic Decomposition for Micro electro mechanical Device (Microelectromechnical system 소자 제작을 위한 유기금속분해법에 의한 압전성 PZT(53/47)박막의 증착)

  • 윤영수;정형진;신영화
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.458-464
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    • 1998
  • This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

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Preparation and characterization of silver nanowire transparent electrodes using shear-coating (Shear-coating을 사용한 은 나노와이어 투명 전극 제조 및 특성 분석)

  • Cho, Kyung Soo;Hong, Ki-Ha;Park, Joon Sik;Chung, Choong-Heui
    • Journal of the Korean institute of surface engineering
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    • v.53 no.4
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    • pp.182-189
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    • 2020
  • Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

Electrochemical Oxidation of Sulfur Dioxide on Tin Oxide Thin Film Electrode (산화주석 얇은 막 전극에서의 이산화황 산화반응)

  • Jong In Hong;Woon Kie Paik;Ha Suck Kim
    • Journal of the Korean Chemical Society
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    • v.29 no.2
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    • pp.172-177
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    • 1985
  • The semiconducting property of Sb-doped tin oxide thin film electrode was investigated and the electrocatalytic effect of this electrode for $SO_2$ (or sulfite, bisulfite ions) oxidation reaction was studied under various conditions. The anodic oxidation of $SO_2$ at tin oxide thin film electrode commenced at lower potential with increasing pH, and good electrocatalytic effect was shown of $SO_3^=$ oxidation in basic solution. In the acidic solutions the electrocatalytic effect of platinum-or palladium-incorporated tin oxide electrode was found to be due to the sites of Pt or Pd exposed on the electrode surface. The electrocatalytic effect of tin oxide electrode was distinctive from that of Pt-or Pd-containing electrodes.

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Preparation of Sr2FeMoO6 Thin Films by RF Magnetron Sputtering and Their Electrical Conduction Properties (RF 스퍼터법을 이용한 Sr2FeMoO6 박막 제조 및 전기전도 특성)

  • Ryu, Hee-Uk;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.966-972
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    • 2010
  • Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

A study on the electrical switching properties of oxide metal (산화금속의 전기적 스위칭 특성 연구)

  • Choi, Sung-Jai;Lee, Won-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.3
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    • pp.173-178
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    • 2009
  • We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

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