• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.44-49
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• 2009

Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

• Korean Journal of Breeding Science
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• v.42 no.1
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• pp.75-86
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• 2010

End-use properties of 26 Korean wheat cultivars (KWC) were evaluated to assess consumer satisfaction with 6 imported wheat and 5 commercial wheat flours. In end-use quality testing of cooked noodles, Absorption of noodle dough sheet of ASW (Australian standard white) was similar to Anbaek, Eunpa, Gobun, Hanbaek, Jeokjoong, Jonong, Namhae, and Sukang. Thickness of noodle dough sheet of KWC was showed thin difference. In imported wheat and commercial flour, Commercial flour for baking cookie (Com5) with lower protein flour was lower than those flours. In lightness of prepared noodle dough sheet, Lightness value ($L^*$) of KWC was lower than those of Commercial flour for making white salted noodle (Com1), commercial flour for making for yellow alkaline noodle (Com2), and commercial flour for multi-purpose (Com4). Lightness value ($L^*$) showed significantly negative correlations with particle size of flour, ash, damaged starch, and protein content. Hardness of cooked noodles positively correlated with protein content. In texture of cooked noodles, Hardness of Com1 was similar to that of Alchan, Dahong, Jeokjoon, and Sukang. Also, hardness of Com2 was similar to that of Gobun, Jokyung, Jonong, Keumkang, and Namhae. In end-use quality of bread, bread loaf volume of commercial flour for making bread (Com3) was similar to Alchan, Jokyung, Keumkang, and Namhae but firmness was low. Bread volume showed better relationships with higher SDS-sedimentation volume, longer mixing time of mixograph, higher height of dough during development. Firmness of crumb was negatively correlated with bread volume. Diameter of cookie showed significantly negative correlations with particle size of flour, damaged starch, and protein content. Also, Top gain score became higher as the increase diameter of cookie. In end-use quality testing of cooked cookie, Cookie diameter of Com5 was similar to that of Dahong, Geuru, Olgeuru, Tapdong, and Uri but top grain was low.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8479-8486
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• 2015

This study aim is occur in brain CT cause of beam hardening effect and reducing method, We will scan Bone opaque bead phantom on variation of image on the influence factor with equipment called 'Samatom Senation 16' with following listed herein : tube voltage, tube current, slice thickness, gantry angle, base line which affect beam-hardening effect. After that we are going to start Quantitative Analysis resulted in previous scanning and Qualitative Assessment with CT image sheet evaluation. result of quantitative analysis 140kVp $31.56{\pm}2.89HU$ on tube voltage, 150mA $-3.87{\pm}0.12HU$ on tube current, 3mm on slice thickness, and $13.31{\pm}1.03HU$ IOML on gantry angle which was the least beam-hardening effect. Like Qualitative Analysis, we went through Qualitative Assessment and most of valuers got a result of 140kVp on tube voltage, 150mA on tube current, 3mm on slice thickness. As before valuers evaluated gantry angle that scanned image from IOML or OML was the least beam-hardening effect occured. There are meaningful differences when we compare all theses factors statistically(P<0.05). therefore We consider that Minimizing artifact that caused by beam-hardening effect can provide better quality of image to deciphers and patients. if we rise tube voltage in permissible dose limit, set tube current in a limit that does not effect to image quality, use slice thickness too thin enough to harm resolution, use IOML or OML on gantry angle.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.363-369
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• 2002

We have designed conductive transparent filters using a low-emissivity coating such as [dielectric|Ag|dielectric] for display applications. The design is the repetition of [$TiO_{2}$|Ti|Ag |$TiO_{2}$] to increase the transmittance in the visible and decrease the transmittance in the near IR. The conductive transparent filters are deposited by a radio frequency(RF) magnetron sputtering system. The optical, structural and electrical properties of the filters were investigated and the optical spectra are compared with simulated spectra. The thickness of the deposited Ag films is above 13 ㎚ to increase the conductivity and that of $TiO_{2}$ films is 24 ㎚ to increase the transmittance in the visible range. Ti blockers are employed to prevent the Ag films from being oxidized by an oxygen gas during the reactive sputtering process. Also, it is shown that the thicker Ti film is necessary as the period increases. Finally, a filter with repetition of the basic structure three times shows the better cut-off near infrared(NIR) and the sheet resistance as low as 2Ω/□ which is enough to shield an unnecessary electromagnetic waves for a display panel.

• Geophysics and Geophysical Exploration
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• v.2 no.2
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• pp.86-95
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• 1999

This paper presents an efficient three-dimensional (3-D) modeling algorithm using the extended approximation to an electric field integral equation. Numerical evaluations of Green's tensor integral are performed in the spatial wavenumber domain. This approach makes it possible to reduce computing time, to handle smoothly varying conductivity model and to remove singularity problems encountered in the integration of Green's tensor at a source point. The responses obtained by 3-D modeling algorithm developed in this study are compared with those by the full integral equation for a thin-sheet EM scattering. The extensive analyses on the performance of modeling algorithm are made with the conductivity contrasts and source frequencies. These results show that the modeling algorithm are accurate up to the conductivity contrast of 1:16 and the frequency range of 100 Hz-100 kHz. The extended Born approximation, however, may produce inaccurate results for some source and model configurations in which the electric field is discontinuous across the conductivity boundary. We performed the modeling of a composite model of which conductivity varies continuously and this shows the modeling algorithm developed in this study is efficient for 3-D EM modeling. For a cross-hole source-receiver configuration a composite model of which conductivity varies continuously can be successfully simulated using this algorithm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.7-11
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• 2011

In this paper, we proposed a simple and high-yield printing process for source and drain electrodes of organic thin film transistor (OTFT). The surface energy of PVP (poly 4-vinylphenol) gate dielectric was decreased from 56 $mJ/m^2$ to 45 $mJ/m^2$ by adding fluoride of 3000ppm into it. Meanwhile the surface energy of source and drain (S/D) electrodes area on the PVP was increased to 87 $mJ/m^2$ by treating the areas, which was patterned by photolithography, with oxygen plasma, maximizing the surface energy difference from the other areas. A conductive polymer, G-PEDOT:PSS, was deposited on the S/D electrode areas by brushing painting process. With such a simple process we could obtain a high yield of above 90 % in $16{\times}16$ arrays of OTFTs. The performance of OTFTs with the fluoride-added PVP was similar to that of OTFTs with the ordinary PVP without fluoride, generating the mobility of 0.1 $cm^2/V.sec$, which was sufficient enough to drive electrophoretic display (EPD) sheet. The EPD panel employing the OTFT-backpane successfully demonstrated to display some patterns on it.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.10
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• pp.1179-1185
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• 2011

Cold and hot-rolled carbon steel sheets are commonly used in railroad cars or commercial vehicles such as the automobile. The sheets used in these applications are mainly fabricated by spot welding, which is a type of electric resistance welding. However, the fatigue strength of a spot-welded joint is lower than that of the base metal because of high stress concentration at the nugget edge of the spot-welded part. In particular, the fatigue strength of the joint is influenced by not only geometrical and mechanical factors but also the welding conditions for the spot-welded joint. Therefore, there is a need for establishing a reasonable criterion for a long-life design for spot-welded structures. In this thesis, ${\Delta}P-N_f$ relation curves have been used to determine a long-life fatigue-design criterion for thin-sheet structures. However, as these curves vary under the influence of welding conditions, mechanical conditions, geometrical factors, etc. It is very difficult to systematically determine a fatigue-design criterion on the basis of these curves. Therefore, in order to eliminate such problems, the welding residual stresses generated during welding and the stress distributions around the weld generated by external forces were numerically and experimentally analyzed on the basis of the results, reassessed fatigue strength of gas welded joints.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.