• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.343-346
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• 2004

In recent years, various forms of indentation testing have been increasingly used to determine the material properties of specimens. This technique, particularly the nano-indentation method , has been extended to the testing of coating systems in order to calculate the individual properties of the thin coatings and the substrates. However, the interpretation of the test data to achieve this is complex and continues to be a widely studied subject. Based on the finite element method of coated surfaces indented by a Berkovich diamond tip, this paper describes methods for combining FEM and experimental indentation testing to determine coating modulus and hardness independent of substrate effects. Using this proposed methodology, testing and FEM to measure coefficients of friction of sheet steel for outer panel were studied.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• 한국자동차공학회논문집
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• 제1권1호
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• pp.140-148
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• 1993

When a large automobile sheet metal part is formed in a draw die, the binder wrap is first calculated to predict the initial punch contact location for avoiding wrinkles and severe stretching of its thin blank sheet. Since the boundary of a pseudo blank in calculating a binder wrap by means of a geometrically nonlinear finite element method is unknown in advance, an iteration method is generally used. This paper presents an effective iteration method for correction of the pseudo blank in a binder wrap calculation. For the performance test, two examples are adopted. The calculated results for both examples show the good convergence which wasted solutions are obtained in the second iteration step.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 춘계학술대회 논문집
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• pp.379-382
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• 2007

The MEMS (Micro Electro Mechanical Systems) process is used in a micro/nano pattern manufacturing method. This method is based on the lithography technology. But the MEMS process has some problems such as complicated process, long processing time and high production costs. Many researchers are doing research in substitute manufacturing method to work out a solution to these problems. In this paper, we apply a dieless incremental forming technology to a substitute method of MEMS process. This dieless forming technology is using in the commercial scale sheet forming such as a prototype of automobile sheet parts. 5-axes CNC (Computerized Numeric Control) method are applied in this system to get a micro-scale dieless forming results. These 5-axes system are composed of precision AC servo motor stages (4-axes) and PZT actuator (1-axis). A PZT actuator is used in a precision actuating axis because it can be operated in the nano scale stroke resolution. This micro dieless incremental forming system has the advantage of minimization in manipulating distance and working space. As equipment and tools become smaller in size, minute inertia force and high natural frequency can be obtained. Therefore, high precision forming performance can be obtained. This allows the factory to quickly provide the customer with goods because the manufacturing system and process are reduced. To construct this micro manufacturing system, many technologies are necessary such as high stiffness frame, high precision actuating part, structural analysis, high precision tools and system control. To achieve the optimal forming quality, the micro dieless forming system is designed and made with high stiffness characteristic.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.261-261
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• 1999

We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].

• 한국재료학회지
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• 제30권6호
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• 열처리공학회지
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• 제28권1호
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• pp.7-16
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• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

• 한국레이저가공학회지
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• 제4권1호
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• pp.29-38
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• 2001

This work was carried out to investigate the welding behavior of thin A3003 Al alloy sheets by Nd : YAG laser beam. Considering bead shape and mechanical properties, the laser pulse shapes selected were two kinds of 2-division and 3-division by varying power level and pulse duration. In order to obtain optimum conditions, the factorial design method and central composite design method were applied. Tensile test, optical microscopy, micro hardness test and TEM analysis were performed. Due to the annealing caused by thermal effect during laser welding, precipitates were coarsended. The HAZ was softened and failed during tensile test. The hardness of HAZ was lower than that of base metal, since the heat input relieved the work hardening effect and caused grain growth.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.39-40
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• 1998

Diffusion barrier characteristics of hf(C,N) thin films for Cu metalliztion was investgated. Hf(C,N) thin films were depposited on Si(100) suvstrates by ppulsed D. C pplasma enhanced metal-organic chemical vappor depposition (ppE-MOCVD) using Tetrakis diethyl amido hafnium (Hf[NC2H5)2]4 : TDEAHf) and N2 as pprecursors. X-ray diffraction analyses sheet resistance measurment and Rutherford backscattering sppectroscoppy analyses revealed that HF(C,N) films pprevent diffusion of Cu fairly well upp to $600^{\circ}C$. At $700^{\circ}C$ however Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.